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High-precision, large-domain three-dimensional manipulation of nano-materials for fabrication nanodevices.

Zou R, Yu L, Zhang Z, Chen Z, Hu J - Nanoscale Res Lett (2011)

Bottom Line: With some advantages of high precision and large domain, we can move and position and interconnect individual nanowires for contracting nanodevices.Interestingly, by the manipulating technique, the nanodevice made of three vertically interconnecting nanowires, i.e., diode, was realized and showed an excellent electrical property.This technique may be useful to fabricate electronic devices based on the nanowires' moving, positioning, and interconnecting and may overcome fundamental limitations of conventional mechanical fabrication.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China. hu.junqing@dhu.edu.cn.

ABSTRACT
Nanoscaled materials are attractive building blocks for hierarchical assembly of functional nanodevices, which exhibit diverse performances and simultaneous functions. We innovatively fabricated semiconductor nano-probes of tapered ZnS nanowires through melting and solidifying by electro-thermal process; and then, as-prepared nano-probes can manipulate nanomaterials including semiconductor/metal nanowires and nanoparticles through sufficiently electrostatic force to the desired location without structurally and functionally damage. With some advantages of high precision and large domain, we can move and position and interconnect individual nanowires for contracting nanodevices. Interestingly, by the manipulating technique, the nanodevice made of three vertically interconnecting nanowires, i.e., diode, was realized and showed an excellent electrical property. This technique may be useful to fabricate electronic devices based on the nanowires' moving, positioning, and interconnecting and may overcome fundamental limitations of conventional mechanical fabrication.

No MeSH data available.


Related in: MedlinePlus

SEM image, TEM image and the corresponding ED pattern, and EDS spectra of nanowires. (a) SEM image of as-grown tapered ZnS nanowires. (b) TEM image showing a tapered ZnS nanowire tipped by a Sn particle on its thicker end. The lower-left inset showing the corresponding ED pattern recorded with an incident electron beam along the [100] direction. (c) EDS spectra recorded for a nanowire (curve i) and a spherical Sn particle on its end (curve ii).
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Figure 1: SEM image, TEM image and the corresponding ED pattern, and EDS spectra of nanowires. (a) SEM image of as-grown tapered ZnS nanowires. (b) TEM image showing a tapered ZnS nanowire tipped by a Sn particle on its thicker end. The lower-left inset showing the corresponding ED pattern recorded with an incident electron beam along the [100] direction. (c) EDS spectra recorded for a nanowire (curve i) and a spherical Sn particle on its end (curve ii).

Mentions: The tapered ZnS nanowires were synthesized at 1,150°C via a Sn-catalyst VLS growth using a mixture of ZnS and SnO powders as starting materials. As shown in a scanning electron microscopy (SEM; S-4800, Hitachi Co., Tokyo, Japan) image (Figure 1a) many tapered nanowires with a spherical particle at their tip ends were formed in the product. Typically, they are straight and have a length ranging from several to tens of micrometers. TEM image reveals that as-grown nanostructures are in fact ZnS nanowires with Sn spherical particles at their tip ends. The corresponding electron diffraction (ED) pattern (the lower-right inset in Figure 1b) can be indexed as the [100] zone axis diffraction pattern of the wurtzite ZnS single crystal. Normally, the diameters of these ZnS nanowires gradually decrease and become smaller and smaller along their lengths, from 200-400 nm at the thicker end to 30-80 nm at the thinner end, respectively (Figure 1b); the spherical Sn particles on the thicker end have several hundred nanometers in diameter. The energy-dispersive spectra (EDS) shown in Figure 1c were recorded for nanowire part (curve i) and Sn particle part (curve ii), respectively, confirming that the nanowire has a chemical composition of ZnS, and the particle is metallic Sn.


High-precision, large-domain three-dimensional manipulation of nano-materials for fabrication nanodevices.

Zou R, Yu L, Zhang Z, Chen Z, Hu J - Nanoscale Res Lett (2011)

SEM image, TEM image and the corresponding ED pattern, and EDS spectra of nanowires. (a) SEM image of as-grown tapered ZnS nanowires. (b) TEM image showing a tapered ZnS nanowire tipped by a Sn particle on its thicker end. The lower-left inset showing the corresponding ED pattern recorded with an incident electron beam along the [100] direction. (c) EDS spectra recorded for a nanowire (curve i) and a spherical Sn particle on its end (curve ii).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211986&req=5

Figure 1: SEM image, TEM image and the corresponding ED pattern, and EDS spectra of nanowires. (a) SEM image of as-grown tapered ZnS nanowires. (b) TEM image showing a tapered ZnS nanowire tipped by a Sn particle on its thicker end. The lower-left inset showing the corresponding ED pattern recorded with an incident electron beam along the [100] direction. (c) EDS spectra recorded for a nanowire (curve i) and a spherical Sn particle on its end (curve ii).
Mentions: The tapered ZnS nanowires were synthesized at 1,150°C via a Sn-catalyst VLS growth using a mixture of ZnS and SnO powders as starting materials. As shown in a scanning electron microscopy (SEM; S-4800, Hitachi Co., Tokyo, Japan) image (Figure 1a) many tapered nanowires with a spherical particle at their tip ends were formed in the product. Typically, they are straight and have a length ranging from several to tens of micrometers. TEM image reveals that as-grown nanostructures are in fact ZnS nanowires with Sn spherical particles at their tip ends. The corresponding electron diffraction (ED) pattern (the lower-right inset in Figure 1b) can be indexed as the [100] zone axis diffraction pattern of the wurtzite ZnS single crystal. Normally, the diameters of these ZnS nanowires gradually decrease and become smaller and smaller along their lengths, from 200-400 nm at the thicker end to 30-80 nm at the thinner end, respectively (Figure 1b); the spherical Sn particles on the thicker end have several hundred nanometers in diameter. The energy-dispersive spectra (EDS) shown in Figure 1c were recorded for nanowire part (curve i) and Sn particle part (curve ii), respectively, confirming that the nanowire has a chemical composition of ZnS, and the particle is metallic Sn.

Bottom Line: With some advantages of high precision and large domain, we can move and position and interconnect individual nanowires for contracting nanodevices.Interestingly, by the manipulating technique, the nanodevice made of three vertically interconnecting nanowires, i.e., diode, was realized and showed an excellent electrical property.This technique may be useful to fabricate electronic devices based on the nanowires' moving, positioning, and interconnecting and may overcome fundamental limitations of conventional mechanical fabrication.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China. hu.junqing@dhu.edu.cn.

ABSTRACT
Nanoscaled materials are attractive building blocks for hierarchical assembly of functional nanodevices, which exhibit diverse performances and simultaneous functions. We innovatively fabricated semiconductor nano-probes of tapered ZnS nanowires through melting and solidifying by electro-thermal process; and then, as-prepared nano-probes can manipulate nanomaterials including semiconductor/metal nanowires and nanoparticles through sufficiently electrostatic force to the desired location without structurally and functionally damage. With some advantages of high precision and large domain, we can move and position and interconnect individual nanowires for contracting nanodevices. Interestingly, by the manipulating technique, the nanodevice made of three vertically interconnecting nanowires, i.e., diode, was realized and showed an excellent electrical property. This technique may be useful to fabricate electronic devices based on the nanowires' moving, positioning, and interconnecting and may overcome fundamental limitations of conventional mechanical fabrication.

No MeSH data available.


Related in: MedlinePlus