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Carbon-assisted growth and high visible-light optical reflectivity of amorphous silicon oxynitride nanowires.

Zhang L, Shi T, Tang Z, Liu D, Xi S, Li X, Lai W - Nanoscale Res Lett (2011)

Bottom Line: The obtained nanowires were attractive for their exceptional whiteness, perceived brightness, and optical brilliance.These nanowires display greatly enhanced reflection over the whole visible wavelength, with more than 80% of light reflected on most of the wavelength ranging from 400 to 700 nm and the lowest reflectivity exceeding 70%, exhibiting performance superior to that of the reported white beetle.Intense visible photoluminescence is also observed over a broad spectrum ranging from 320 to 500 nm with two shoulders centered at around 444 and 468 nm, respectively.

View Article: PubMed Central - HTML - PubMed

Affiliation: Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China. zirong@mail.hust.edu.cn.

ABSTRACT
Large amounts of amorphous silicon oxynitride nanowires have been synthesized on silicon wafer through carbon-assisted vapor-solid growth avoiding the contamination from metallic catalysts. These nanowires have the length of up to 100 μm, with a diameter ranging from 50 to 150 nm. Around 3-nm-sized nanostructures are observed to be homogeneously distributed within a nanowire cross-section matrix. The unique configuration might determine the growth of ternary amorphous structure and its special splitting behavior. Optical properties of the nanowires have also been investigated. The obtained nanowires were attractive for their exceptional whiteness, perceived brightness, and optical brilliance. These nanowires display greatly enhanced reflection over the whole visible wavelength, with more than 80% of light reflected on most of the wavelength ranging from 400 to 700 nm and the lowest reflectivity exceeding 70%, exhibiting performance superior to that of the reported white beetle. Intense visible photoluminescence is also observed over a broad spectrum ranging from 320 to 500 nm with two shoulders centered at around 444 and 468 nm, respectively.

No MeSH data available.


The HAADF STEM image of the nanowire growing interface. (a) HAADF STEM image of Si-O-N nanowires growing interface. (b) An enlarged view of the region marked in (a). (c) Elemental counts distribution corresponding to the line in Figure 2b.
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Figure 4: The HAADF STEM image of the nanowire growing interface. (a) HAADF STEM image of Si-O-N nanowires growing interface. (b) An enlarged view of the region marked in (a). (c) Elemental counts distribution corresponding to the line in Figure 2b.

Mentions: Figure 4a shows the HAADF STEM image of the nanowire growing interface. Figure 4b is an enlarged view of the region marked in Figure 4a. Figure 4c shows the elemental counts distribution of the interface corresponding to the line in Figure 4b, where the bottom is defined as the starting point in the horizontal axis, and the line length is 60 nm. It shows that the interface consists of three layers namely Si (0-10 nm), SiO2 (10-15 nm), and C (15-25 nm) from the bottom to the top, where SiO2 layer is due to the native oxidation of Si substrate, and C layer is formed by sputtering initially.


Carbon-assisted growth and high visible-light optical reflectivity of amorphous silicon oxynitride nanowires.

Zhang L, Shi T, Tang Z, Liu D, Xi S, Li X, Lai W - Nanoscale Res Lett (2011)

The HAADF STEM image of the nanowire growing interface. (a) HAADF STEM image of Si-O-N nanowires growing interface. (b) An enlarged view of the region marked in (a). (c) Elemental counts distribution corresponding to the line in Figure 2b.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211981&req=5

Figure 4: The HAADF STEM image of the nanowire growing interface. (a) HAADF STEM image of Si-O-N nanowires growing interface. (b) An enlarged view of the region marked in (a). (c) Elemental counts distribution corresponding to the line in Figure 2b.
Mentions: Figure 4a shows the HAADF STEM image of the nanowire growing interface. Figure 4b is an enlarged view of the region marked in Figure 4a. Figure 4c shows the elemental counts distribution of the interface corresponding to the line in Figure 4b, where the bottom is defined as the starting point in the horizontal axis, and the line length is 60 nm. It shows that the interface consists of three layers namely Si (0-10 nm), SiO2 (10-15 nm), and C (15-25 nm) from the bottom to the top, where SiO2 layer is due to the native oxidation of Si substrate, and C layer is formed by sputtering initially.

Bottom Line: The obtained nanowires were attractive for their exceptional whiteness, perceived brightness, and optical brilliance.These nanowires display greatly enhanced reflection over the whole visible wavelength, with more than 80% of light reflected on most of the wavelength ranging from 400 to 700 nm and the lowest reflectivity exceeding 70%, exhibiting performance superior to that of the reported white beetle.Intense visible photoluminescence is also observed over a broad spectrum ranging from 320 to 500 nm with two shoulders centered at around 444 and 468 nm, respectively.

View Article: PubMed Central - HTML - PubMed

Affiliation: Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China. zirong@mail.hust.edu.cn.

ABSTRACT
Large amounts of amorphous silicon oxynitride nanowires have been synthesized on silicon wafer through carbon-assisted vapor-solid growth avoiding the contamination from metallic catalysts. These nanowires have the length of up to 100 μm, with a diameter ranging from 50 to 150 nm. Around 3-nm-sized nanostructures are observed to be homogeneously distributed within a nanowire cross-section matrix. The unique configuration might determine the growth of ternary amorphous structure and its special splitting behavior. Optical properties of the nanowires have also been investigated. The obtained nanowires were attractive for their exceptional whiteness, perceived brightness, and optical brilliance. These nanowires display greatly enhanced reflection over the whole visible wavelength, with more than 80% of light reflected on most of the wavelength ranging from 400 to 700 nm and the lowest reflectivity exceeding 70%, exhibiting performance superior to that of the reported white beetle. Intense visible photoluminescence is also observed over a broad spectrum ranging from 320 to 500 nm with two shoulders centered at around 444 and 468 nm, respectively.

No MeSH data available.