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Carbon-assisted growth and high visible-light optical reflectivity of amorphous silicon oxynitride nanowires.

Zhang L, Shi T, Tang Z, Liu D, Xi S, Li X, Lai W - Nanoscale Res Lett (2011)

Bottom Line: The obtained nanowires were attractive for their exceptional whiteness, perceived brightness, and optical brilliance.These nanowires display greatly enhanced reflection over the whole visible wavelength, with more than 80% of light reflected on most of the wavelength ranging from 400 to 700 nm and the lowest reflectivity exceeding 70%, exhibiting performance superior to that of the reported white beetle.Intense visible photoluminescence is also observed over a broad spectrum ranging from 320 to 500 nm with two shoulders centered at around 444 and 468 nm, respectively.

View Article: PubMed Central - HTML - PubMed

Affiliation: Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China. zirong@mail.hust.edu.cn.

ABSTRACT
Large amounts of amorphous silicon oxynitride nanowires have been synthesized on silicon wafer through carbon-assisted vapor-solid growth avoiding the contamination from metallic catalysts. These nanowires have the length of up to 100 μm, with a diameter ranging from 50 to 150 nm. Around 3-nm-sized nanostructures are observed to be homogeneously distributed within a nanowire cross-section matrix. The unique configuration might determine the growth of ternary amorphous structure and its special splitting behavior. Optical properties of the nanowires have also been investigated. The obtained nanowires were attractive for their exceptional whiteness, perceived brightness, and optical brilliance. These nanowires display greatly enhanced reflection over the whole visible wavelength, with more than 80% of light reflected on most of the wavelength ranging from 400 to 700 nm and the lowest reflectivity exceeding 70%, exhibiting performance superior to that of the reported white beetle. Intense visible photoluminescence is also observed over a broad spectrum ranging from 320 to 500 nm with two shoulders centered at around 444 and 468 nm, respectively.

No MeSH data available.


XPS spectra of the as-synthesized nanowire bundles. Binding energies of the Si 2p are shown as an insert.
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Figure 3: XPS spectra of the as-synthesized nanowire bundles. Binding energies of the Si 2p are shown as an insert.

Mentions: The chemical composition of the nanowires was further characterized by XPS. Figure 3 shows the XPS spectra of the resulting nanowires with Si 2p, N 1s, and O 1s signals, with the binding energies of the Si 2p as an insert. Three strong XPS signals confirm that the nanowire is composed of the three elements (Si, O, and N). The Si 2p spectrum is decomposed into three Gaussian peaks located at 101, 102, and 103.2 eV. The two peaks at 101 and 103.2 eV are attributed to Si-N and Si-O bonds, respectively. The peak at 102 eV can be attributed to the Si-CHx bonds which may be due to organic gas adsorption. From the integrated areas of the Si 2p, N 1s, and O 1s peaks, it is estimated that the Si, N, and O atoms of the nanowires have the ratio of approximately 0.70:1:1.28. The apparent ratio difference of the three elements between EDX and XPS indicates that N element concentration is much higher at the surface area.


Carbon-assisted growth and high visible-light optical reflectivity of amorphous silicon oxynitride nanowires.

Zhang L, Shi T, Tang Z, Liu D, Xi S, Li X, Lai W - Nanoscale Res Lett (2011)

XPS spectra of the as-synthesized nanowire bundles. Binding energies of the Si 2p are shown as an insert.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211981&req=5

Figure 3: XPS spectra of the as-synthesized nanowire bundles. Binding energies of the Si 2p are shown as an insert.
Mentions: The chemical composition of the nanowires was further characterized by XPS. Figure 3 shows the XPS spectra of the resulting nanowires with Si 2p, N 1s, and O 1s signals, with the binding energies of the Si 2p as an insert. Three strong XPS signals confirm that the nanowire is composed of the three elements (Si, O, and N). The Si 2p spectrum is decomposed into three Gaussian peaks located at 101, 102, and 103.2 eV. The two peaks at 101 and 103.2 eV are attributed to Si-N and Si-O bonds, respectively. The peak at 102 eV can be attributed to the Si-CHx bonds which may be due to organic gas adsorption. From the integrated areas of the Si 2p, N 1s, and O 1s peaks, it is estimated that the Si, N, and O atoms of the nanowires have the ratio of approximately 0.70:1:1.28. The apparent ratio difference of the three elements between EDX and XPS indicates that N element concentration is much higher at the surface area.

Bottom Line: The obtained nanowires were attractive for their exceptional whiteness, perceived brightness, and optical brilliance.These nanowires display greatly enhanced reflection over the whole visible wavelength, with more than 80% of light reflected on most of the wavelength ranging from 400 to 700 nm and the lowest reflectivity exceeding 70%, exhibiting performance superior to that of the reported white beetle.Intense visible photoluminescence is also observed over a broad spectrum ranging from 320 to 500 nm with two shoulders centered at around 444 and 468 nm, respectively.

View Article: PubMed Central - HTML - PubMed

Affiliation: Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China. zirong@mail.hust.edu.cn.

ABSTRACT
Large amounts of amorphous silicon oxynitride nanowires have been synthesized on silicon wafer through carbon-assisted vapor-solid growth avoiding the contamination from metallic catalysts. These nanowires have the length of up to 100 μm, with a diameter ranging from 50 to 150 nm. Around 3-nm-sized nanostructures are observed to be homogeneously distributed within a nanowire cross-section matrix. The unique configuration might determine the growth of ternary amorphous structure and its special splitting behavior. Optical properties of the nanowires have also been investigated. The obtained nanowires were attractive for their exceptional whiteness, perceived brightness, and optical brilliance. These nanowires display greatly enhanced reflection over the whole visible wavelength, with more than 80% of light reflected on most of the wavelength ranging from 400 to 700 nm and the lowest reflectivity exceeding 70%, exhibiting performance superior to that of the reported white beetle. Intense visible photoluminescence is also observed over a broad spectrum ranging from 320 to 500 nm with two shoulders centered at around 444 and 468 nm, respectively.

No MeSH data available.