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A Novel Way for Synthesizing Phosphorus-Doped Zno Nanowires

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ABSTRACT

We developed a novel approach to synthesize phosphorus (P)-doped ZnO nanowires by directly decomposing zinc phosphate powder. The samples were demonstrated to be P-doped ZnO nanowires by using scanning electron microscopy, high-resolution transmission electron microscopy, X-ray diffraction spectra, X-ray photoelectron spectroscopy, energy dispersive spectrum, Raman spectra and photoluminescence measurements. The chemical state of P was investigated by electron energy loss spectroscopy (EELS) analyses in individual ZnO nanowires. P was found to substitute at oxygen sites (PO), with the presence of anti-site P on Zn sites (PZn). P-doped ZnO nanowires were high resistance and the related P-doping mechanism was discussed by combining EELS results with electrical measurements, structure characterization and photoluminescence measurements. Our method provides an efficient way of synthesizing P-doped ZnO nanowires and the results help to understand the P-doping mechanism.

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a Raman spectra of P-doped ZnO nanowires b PL spectra of P-doped ZnO nanowires at room temperature. Inset: detail of the defect-related emission part in PL c Atomic configurations of PO and PZn + 2VZn in ZnO, respectively. Big red balls represent oxygen atoms and small gray balls represent zinc atoms. Phosphorus atoms and Zinc vacancy are marked by P and VZn, respectively d EELS spectra obtained at the P L23 peak in P-doped ZnO nanowires with the referenced P L23 peaks in Zn3(PO4)2, P2O5 and Zn3P2, respectively.
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Figure 2: a Raman spectra of P-doped ZnO nanowires b PL spectra of P-doped ZnO nanowires at room temperature. Inset: detail of the defect-related emission part in PL c Atomic configurations of PO and PZn + 2VZn in ZnO, respectively. Big red balls represent oxygen atoms and small gray balls represent zinc atoms. Phosphorus atoms and Zinc vacancy are marked by P and VZn, respectively d EELS spectra obtained at the P L23 peak in P-doped ZnO nanowires with the referenced P L23 peaks in Zn3(PO4)2, P2O5 and Zn3P2, respectively.

Mentions: Raman and PL measurements were carried out to characterize the quality of the as-grown P-doped ZnO nanowires. There are two common peaks in ZnO Raman spectra: one at 437 cm-1 corresponding to E2H mode and one broad peak at 580 cm-1, which is a combination of E1LO and A1LO modes and usually been found to be enhanced by disorder [17]. As shown in Figure 2a, only the peak at 437 cm-1 appears in the Raman spectra of P-doped ZnO nanowires. The absence of 580 cm-1 peak is a signal of good ZnO lattice quality grown by this method.


A Novel Way for Synthesizing Phosphorus-Doped Zno Nanowires
a Raman spectra of P-doped ZnO nanowires b PL spectra of P-doped ZnO nanowires at room temperature. Inset: detail of the defect-related emission part in PL c Atomic configurations of PO and PZn + 2VZn in ZnO, respectively. Big red balls represent oxygen atoms and small gray balls represent zinc atoms. Phosphorus atoms and Zinc vacancy are marked by P and VZn, respectively d EELS spectra obtained at the P L23 peak in P-doped ZnO nanowires with the referenced P L23 peaks in Zn3(PO4)2, P2O5 and Zn3P2, respectively.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211869&req=5

Figure 2: a Raman spectra of P-doped ZnO nanowires b PL spectra of P-doped ZnO nanowires at room temperature. Inset: detail of the defect-related emission part in PL c Atomic configurations of PO and PZn + 2VZn in ZnO, respectively. Big red balls represent oxygen atoms and small gray balls represent zinc atoms. Phosphorus atoms and Zinc vacancy are marked by P and VZn, respectively d EELS spectra obtained at the P L23 peak in P-doped ZnO nanowires with the referenced P L23 peaks in Zn3(PO4)2, P2O5 and Zn3P2, respectively.
Mentions: Raman and PL measurements were carried out to characterize the quality of the as-grown P-doped ZnO nanowires. There are two common peaks in ZnO Raman spectra: one at 437 cm-1 corresponding to E2H mode and one broad peak at 580 cm-1, which is a combination of E1LO and A1LO modes and usually been found to be enhanced by disorder [17]. As shown in Figure 2a, only the peak at 437 cm-1 appears in the Raman spectra of P-doped ZnO nanowires. The absence of 580 cm-1 peak is a signal of good ZnO lattice quality grown by this method.

View Article: PubMed Central - HTML - PubMed

ABSTRACT

We developed a novel approach to synthesize phosphorus (P)-doped ZnO nanowires by directly decomposing zinc phosphate powder. The samples were demonstrated to be P-doped ZnO nanowires by using scanning electron microscopy, high-resolution transmission electron microscopy, X-ray diffraction spectra, X-ray photoelectron spectroscopy, energy dispersive spectrum, Raman spectra and photoluminescence measurements. The chemical state of P was investigated by electron energy loss spectroscopy (EELS) analyses in individual ZnO nanowires. P was found to substitute at oxygen sites (PO), with the presence of anti-site P on Zn sites (PZn). P-doped ZnO nanowires were high resistance and the related P-doping mechanism was discussed by combining EELS results with electrical measurements, structure characterization and photoluminescence measurements. Our method provides an efficient way of synthesizing P-doped ZnO nanowires and the results help to understand the P-doping mechanism.

No MeSH data available.