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A Novel Way for Synthesizing Phosphorus-Doped Zno Nanowires

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ABSTRACT

We developed a novel approach to synthesize phosphorus (P)-doped ZnO nanowires by directly decomposing zinc phosphate powder. The samples were demonstrated to be P-doped ZnO nanowires by using scanning electron microscopy, high-resolution transmission electron microscopy, X-ray diffraction spectra, X-ray photoelectron spectroscopy, energy dispersive spectrum, Raman spectra and photoluminescence measurements. The chemical state of P was investigated by electron energy loss spectroscopy (EELS) analyses in individual ZnO nanowires. P was found to substitute at oxygen sites (PO), with the presence of anti-site P on Zn sites (PZn). P-doped ZnO nanowires were high resistance and the related P-doping mechanism was discussed by combining EELS results with electrical measurements, structure characterization and photoluminescence measurements. Our method provides an efficient way of synthesizing P-doped ZnO nanowires and the results help to understand the P-doping mechanism.

No MeSH data available.


a SEM image, b XRD spectrum and c XPS spectrum of P-doped ZnO nanowires. The inset of b shows the detail of the peaks suppressed by (002) peak d Low-magnification TEM image and e HRTEM image of a typical P-doped ZnO nanowire. Inset of e: electron diffraction pattern of the nanowire f EDS spectrum of an individual P-doped ZnO nanowire.
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Figure 1: a SEM image, b XRD spectrum and c XPS spectrum of P-doped ZnO nanowires. The inset of b shows the detail of the peaks suppressed by (002) peak d Low-magnification TEM image and e HRTEM image of a typical P-doped ZnO nanowire. Inset of e: electron diffraction pattern of the nanowire f EDS spectrum of an individual P-doped ZnO nanowire.

Mentions: Figure 1a shows a typical SEM image of the as-grown P-doped ZnO nanowires. The substrate is covered with nanowires with length up to several tens of micrometers and diameter in a range from tens to hundreds nanometers. All peaks in the X-ray diffraction (XRD) spectrum of the as-grown samples (Figure 1b) correspond to ZnO lattice, and no additional peak related to secondary phase appears, indicating purity of our sample. XPS results (Figure 1c) show P peak at 133.56 eV, proving preliminarily the incorporation of P into the as-grown nanowires.


A Novel Way for Synthesizing Phosphorus-Doped Zno Nanowires
a SEM image, b XRD spectrum and c XPS spectrum of P-doped ZnO nanowires. The inset of b shows the detail of the peaks suppressed by (002) peak d Low-magnification TEM image and e HRTEM image of a typical P-doped ZnO nanowire. Inset of e: electron diffraction pattern of the nanowire f EDS spectrum of an individual P-doped ZnO nanowire.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211869&req=5

Figure 1: a SEM image, b XRD spectrum and c XPS spectrum of P-doped ZnO nanowires. The inset of b shows the detail of the peaks suppressed by (002) peak d Low-magnification TEM image and e HRTEM image of a typical P-doped ZnO nanowire. Inset of e: electron diffraction pattern of the nanowire f EDS spectrum of an individual P-doped ZnO nanowire.
Mentions: Figure 1a shows a typical SEM image of the as-grown P-doped ZnO nanowires. The substrate is covered with nanowires with length up to several tens of micrometers and diameter in a range from tens to hundreds nanometers. All peaks in the X-ray diffraction (XRD) spectrum of the as-grown samples (Figure 1b) correspond to ZnO lattice, and no additional peak related to secondary phase appears, indicating purity of our sample. XPS results (Figure 1c) show P peak at 133.56 eV, proving preliminarily the incorporation of P into the as-grown nanowires.

View Article: PubMed Central - HTML - PubMed

ABSTRACT

We developed a novel approach to synthesize phosphorus (P)-doped ZnO nanowires by directly decomposing zinc phosphate powder. The samples were demonstrated to be P-doped ZnO nanowires by using scanning electron microscopy, high-resolution transmission electron microscopy, X-ray diffraction spectra, X-ray photoelectron spectroscopy, energy dispersive spectrum, Raman spectra and photoluminescence measurements. The chemical state of P was investigated by electron energy loss spectroscopy (EELS) analyses in individual ZnO nanowires. P was found to substitute at oxygen sites (PO), with the presence of anti-site P on Zn sites (PZn). P-doped ZnO nanowires were high resistance and the related P-doping mechanism was discussed by combining EELS results with electrical measurements, structure characterization and photoluminescence measurements. Our method provides an efficient way of synthesizing P-doped ZnO nanowires and the results help to understand the P-doping mechanism.

No MeSH data available.