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Simultaneous fabrication of line defects-embedded periodic lattice by topographically assisted holographic lithography.

Choi BY, Pak Y, Kim KS, Lee KH, Jung GY - Nanoscale Res Lett (2011)

Bottom Line: For rapid fabrication of periodic structures incorporating nanoscale line-defects at large area, topographically assisted holographic lithography (TAHL) technique, combining the strength of hologram lithography and phase-shift interference, was proposed.Embossing temperature and relief height were crucial parameters for the successful TAHL process.Periodic holes with a diameter of 600 nm at a 1 μm-pitch incorporating 250 nm wide line-defects were obtained simultaneously.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea. gyjung@gist.ac.kr.

ABSTRACT
We have demonstrated simultaneous fabrication of designed defects within a periodic structure. For rapid fabrication of periodic structures incorporating nanoscale line-defects at large area, topographically assisted holographic lithography (TAHL) technique, combining the strength of hologram lithography and phase-shift interference, was proposed. Hot-embossing method generated the photoresist patterns with vertical side walls which enabled phase-shift mask effect at the edge of patterns. Embossing temperature and relief height were crucial parameters for the successful TAHL process. Periodic holes with a diameter of 600 nm at a 1 μm-pitch incorporating 250 nm wide line-defects were obtained simultaneously.

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FE-SEM images of patterns at each step of TAHL process with a stamp having a relief height of 260 nm. Afterwards (a) development, (b) oxygen plasma treatment for 600 s, (c) Cr lift-off, and (d) reactive ion etching, Cr mask removal (tilt view). SEM images of nanoscale silicon line defects along the (e) cross and (f) arrow edges.
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Figure 5: FE-SEM images of patterns at each step of TAHL process with a stamp having a relief height of 260 nm. Afterwards (a) development, (b) oxygen plasma treatment for 600 s, (c) Cr lift-off, and (d) reactive ion etching, Cr mask removal (tilt view). SEM images of nanoscale silicon line defects along the (e) cross and (f) arrow edges.

Mentions: Interference lithography was finally performed with the embossed samples to fabricate periodic hole patterns and line-defects simultaneously by combining phase-shift mask phenomena and periodic exposure. The sample was exposed to the interfered lights with an energy of 7.25 mJ/cm2 twice with 90 degree rotation, equivalent to total energy of 14.5 mJ/cm2, at an incident angle of 9.35° for a square lattice of holes. Each exposure time was 10 s. After post-exposure baking and subsequent development, periodic hole patterns with a diameter of 400 nm at a 1 μm pitch were obtained along with line-defects at the PR relief edges with a linewidth of 150 nm (Figure 5a). Oxygen plasma treatment was then performed for 600 s to remove any remaining residual PR at the bottom of patterns. Geometric hole diameter and line-defect width were also affected during the oxygen plasma treatment. Accordingly, hole diameter and line-defect width became 600 nm and 250 nm, respectively, after oxygen plasma treatment as shown in Figure 5b.


Simultaneous fabrication of line defects-embedded periodic lattice by topographically assisted holographic lithography.

Choi BY, Pak Y, Kim KS, Lee KH, Jung GY - Nanoscale Res Lett (2011)

FE-SEM images of patterns at each step of TAHL process with a stamp having a relief height of 260 nm. Afterwards (a) development, (b) oxygen plasma treatment for 600 s, (c) Cr lift-off, and (d) reactive ion etching, Cr mask removal (tilt view). SEM images of nanoscale silicon line defects along the (e) cross and (f) arrow edges.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211868&req=5

Figure 5: FE-SEM images of patterns at each step of TAHL process with a stamp having a relief height of 260 nm. Afterwards (a) development, (b) oxygen plasma treatment for 600 s, (c) Cr lift-off, and (d) reactive ion etching, Cr mask removal (tilt view). SEM images of nanoscale silicon line defects along the (e) cross and (f) arrow edges.
Mentions: Interference lithography was finally performed with the embossed samples to fabricate periodic hole patterns and line-defects simultaneously by combining phase-shift mask phenomena and periodic exposure. The sample was exposed to the interfered lights with an energy of 7.25 mJ/cm2 twice with 90 degree rotation, equivalent to total energy of 14.5 mJ/cm2, at an incident angle of 9.35° for a square lattice of holes. Each exposure time was 10 s. After post-exposure baking and subsequent development, periodic hole patterns with a diameter of 400 nm at a 1 μm pitch were obtained along with line-defects at the PR relief edges with a linewidth of 150 nm (Figure 5a). Oxygen plasma treatment was then performed for 600 s to remove any remaining residual PR at the bottom of patterns. Geometric hole diameter and line-defect width were also affected during the oxygen plasma treatment. Accordingly, hole diameter and line-defect width became 600 nm and 250 nm, respectively, after oxygen plasma treatment as shown in Figure 5b.

Bottom Line: For rapid fabrication of periodic structures incorporating nanoscale line-defects at large area, topographically assisted holographic lithography (TAHL) technique, combining the strength of hologram lithography and phase-shift interference, was proposed.Embossing temperature and relief height were crucial parameters for the successful TAHL process.Periodic holes with a diameter of 600 nm at a 1 μm-pitch incorporating 250 nm wide line-defects were obtained simultaneously.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea. gyjung@gist.ac.kr.

ABSTRACT
We have demonstrated simultaneous fabrication of designed defects within a periodic structure. For rapid fabrication of periodic structures incorporating nanoscale line-defects at large area, topographically assisted holographic lithography (TAHL) technique, combining the strength of hologram lithography and phase-shift interference, was proposed. Hot-embossing method generated the photoresist patterns with vertical side walls which enabled phase-shift mask effect at the edge of patterns. Embossing temperature and relief height were crucial parameters for the successful TAHL process. Periodic holes with a diameter of 600 nm at a 1 μm-pitch incorporating 250 nm wide line-defects were obtained simultaneously.

No MeSH data available.


Related in: MedlinePlus