Limits...
Simultaneous fabrication of line defects-embedded periodic lattice by topographically assisted holographic lithography.

Choi BY, Pak Y, Kim KS, Lee KH, Jung GY - Nanoscale Res Lett (2011)

Bottom Line: For rapid fabrication of periodic structures incorporating nanoscale line-defects at large area, topographically assisted holographic lithography (TAHL) technique, combining the strength of hologram lithography and phase-shift interference, was proposed.Embossing temperature and relief height were crucial parameters for the successful TAHL process.Periodic holes with a diameter of 600 nm at a 1 μm-pitch incorporating 250 nm wide line-defects were obtained simultaneously.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea. gyjung@gist.ac.kr.

ABSTRACT
We have demonstrated simultaneous fabrication of designed defects within a periodic structure. For rapid fabrication of periodic structures incorporating nanoscale line-defects at large area, topographically assisted holographic lithography (TAHL) technique, combining the strength of hologram lithography and phase-shift interference, was proposed. Hot-embossing method generated the photoresist patterns with vertical side walls which enabled phase-shift mask effect at the edge of patterns. Embossing temperature and relief height were crucial parameters for the successful TAHL process. Periodic holes with a diameter of 600 nm at a 1 μm-pitch incorporating 250 nm wide line-defects were obtained simultaneously.

No MeSH data available.


Related in: MedlinePlus

The effect of relief height on phase-shift phenomenon. FE-SEM images after UV flood exposure at an energy of 14.5 mJ/cm2 and development with the embossed PR at 90°C by the stamps having a relief height of (a) 90 nm, (b) 130 nm and (c) 260 nm.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC3211868&req=5

Figure 4: The effect of relief height on phase-shift phenomenon. FE-SEM images after UV flood exposure at an energy of 14.5 mJ/cm2 and development with the embossed PR at 90°C by the stamps having a relief height of (a) 90 nm, (b) 130 nm and (c) 260 nm.

Mentions: The PR patterns embossed with above stamps with different relief heights were then exposed to the diffracted laser light through a 10 μm pin-hole without interference at a total energy of 14.5 mJ/cm2. All experimental conditions including the development process were identical except the stamp relief height. SEM images of each case were compared in Figure 4. In case of relief height of 90 nm and 130 nm, the edges of PR pattern were not developed, which means that the lights were not destructively interfered sufficiently and exposed the edges with some intensity because the phase-shift mask is not the integer multiple of π, nπ. On the contrary, with the relief height of 260 nm that is corresponding to π phase-shift mask, trench line patterns were observed at the very edge of the PR reliefs after development, demonstrating that the embossed feature itself could function as a phase shifter, replacing the conventional PDMS phase-shift mask.


Simultaneous fabrication of line defects-embedded periodic lattice by topographically assisted holographic lithography.

Choi BY, Pak Y, Kim KS, Lee KH, Jung GY - Nanoscale Res Lett (2011)

The effect of relief height on phase-shift phenomenon. FE-SEM images after UV flood exposure at an energy of 14.5 mJ/cm2 and development with the embossed PR at 90°C by the stamps having a relief height of (a) 90 nm, (b) 130 nm and (c) 260 nm.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211868&req=5

Figure 4: The effect of relief height on phase-shift phenomenon. FE-SEM images after UV flood exposure at an energy of 14.5 mJ/cm2 and development with the embossed PR at 90°C by the stamps having a relief height of (a) 90 nm, (b) 130 nm and (c) 260 nm.
Mentions: The PR patterns embossed with above stamps with different relief heights were then exposed to the diffracted laser light through a 10 μm pin-hole without interference at a total energy of 14.5 mJ/cm2. All experimental conditions including the development process were identical except the stamp relief height. SEM images of each case were compared in Figure 4. In case of relief height of 90 nm and 130 nm, the edges of PR pattern were not developed, which means that the lights were not destructively interfered sufficiently and exposed the edges with some intensity because the phase-shift mask is not the integer multiple of π, nπ. On the contrary, with the relief height of 260 nm that is corresponding to π phase-shift mask, trench line patterns were observed at the very edge of the PR reliefs after development, demonstrating that the embossed feature itself could function as a phase shifter, replacing the conventional PDMS phase-shift mask.

Bottom Line: For rapid fabrication of periodic structures incorporating nanoscale line-defects at large area, topographically assisted holographic lithography (TAHL) technique, combining the strength of hologram lithography and phase-shift interference, was proposed.Embossing temperature and relief height were crucial parameters for the successful TAHL process.Periodic holes with a diameter of 600 nm at a 1 μm-pitch incorporating 250 nm wide line-defects were obtained simultaneously.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea. gyjung@gist.ac.kr.

ABSTRACT
We have demonstrated simultaneous fabrication of designed defects within a periodic structure. For rapid fabrication of periodic structures incorporating nanoscale line-defects at large area, topographically assisted holographic lithography (TAHL) technique, combining the strength of hologram lithography and phase-shift interference, was proposed. Hot-embossing method generated the photoresist patterns with vertical side walls which enabled phase-shift mask effect at the edge of patterns. Embossing temperature and relief height were crucial parameters for the successful TAHL process. Periodic holes with a diameter of 600 nm at a 1 μm-pitch incorporating 250 nm wide line-defects were obtained simultaneously.

No MeSH data available.


Related in: MedlinePlus