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Simultaneous fabrication of line defects-embedded periodic lattice by topographically assisted holographic lithography.

Choi BY, Pak Y, Kim KS, Lee KH, Jung GY - Nanoscale Res Lett (2011)

Bottom Line: For rapid fabrication of periodic structures incorporating nanoscale line-defects at large area, topographically assisted holographic lithography (TAHL) technique, combining the strength of hologram lithography and phase-shift interference, was proposed.Embossing temperature and relief height were crucial parameters for the successful TAHL process.Periodic holes with a diameter of 600 nm at a 1 μm-pitch incorporating 250 nm wide line-defects were obtained simultaneously.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea. gyjung@gist.ac.kr.

ABSTRACT
We have demonstrated simultaneous fabrication of designed defects within a periodic structure. For rapid fabrication of periodic structures incorporating nanoscale line-defects at large area, topographically assisted holographic lithography (TAHL) technique, combining the strength of hologram lithography and phase-shift interference, was proposed. Hot-embossing method generated the photoresist patterns with vertical side walls which enabled phase-shift mask effect at the edge of patterns. Embossing temperature and relief height were crucial parameters for the successful TAHL process. Periodic holes with a diameter of 600 nm at a 1 μm-pitch incorporating 250 nm wide line-defects were obtained simultaneously.

No MeSH data available.


Schematic illustration of TAHL process for defining line-defects within a periodic structure.
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Figure 2: Schematic illustration of TAHL process for defining line-defects within a periodic structure.

Mentions: Figure 2 represents the entire TAHL process. At first, a silicon stamp with features should be fabricated via photolithography. Relief structures with very vertical side walls are prerequisite for the successful phase-shift mask effect. To replicate the stamp features inversely into a PR layer, hot-embossing lithography - in which both pressure and heat were employed as main parameters - was executed. Embossing with external pressure - compared to chemical means such as solvent-assisted embossing [19] - was advantageous in obtaining the vertical side walls, which are very crucial for appropriate phase-shift effect that defines line-defects in the following laser exposure.


Simultaneous fabrication of line defects-embedded periodic lattice by topographically assisted holographic lithography.

Choi BY, Pak Y, Kim KS, Lee KH, Jung GY - Nanoscale Res Lett (2011)

Schematic illustration of TAHL process for defining line-defects within a periodic structure.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211868&req=5

Figure 2: Schematic illustration of TAHL process for defining line-defects within a periodic structure.
Mentions: Figure 2 represents the entire TAHL process. At first, a silicon stamp with features should be fabricated via photolithography. Relief structures with very vertical side walls are prerequisite for the successful phase-shift mask effect. To replicate the stamp features inversely into a PR layer, hot-embossing lithography - in which both pressure and heat were employed as main parameters - was executed. Embossing with external pressure - compared to chemical means such as solvent-assisted embossing [19] - was advantageous in obtaining the vertical side walls, which are very crucial for appropriate phase-shift effect that defines line-defects in the following laser exposure.

Bottom Line: For rapid fabrication of periodic structures incorporating nanoscale line-defects at large area, topographically assisted holographic lithography (TAHL) technique, combining the strength of hologram lithography and phase-shift interference, was proposed.Embossing temperature and relief height were crucial parameters for the successful TAHL process.Periodic holes with a diameter of 600 nm at a 1 μm-pitch incorporating 250 nm wide line-defects were obtained simultaneously.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea. gyjung@gist.ac.kr.

ABSTRACT
We have demonstrated simultaneous fabrication of designed defects within a periodic structure. For rapid fabrication of periodic structures incorporating nanoscale line-defects at large area, topographically assisted holographic lithography (TAHL) technique, combining the strength of hologram lithography and phase-shift interference, was proposed. Hot-embossing method generated the photoresist patterns with vertical side walls which enabled phase-shift mask effect at the edge of patterns. Embossing temperature and relief height were crucial parameters for the successful TAHL process. Periodic holes with a diameter of 600 nm at a 1 μm-pitch incorporating 250 nm wide line-defects were obtained simultaneously.

No MeSH data available.