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Fabrication of ultrahigh-density nanowires by electrochemical nanolithography.

Chen F, Jiang H, Kiefer AM, Clausen AM, Ting YH, Wendt AE, Ding B, Lagally MG - Nanoscale Res Lett (2011)

Bottom Line: An approach has been developed to produce silver nanoparticles (AgNPs) rapidly on semiconductor wafers using electrochemical deposition.The closely packed AgNPs have a density of up to 1.4 × 1011 cm-2 with good size uniformity.AgNPs retain their shape and position on the substrate when used as nanomasks for producing ultrahigh-density vertical nanowire arrays with controllable size, making it a one-step nanolithography technique.

View Article: PubMed Central - HTML - PubMed

Affiliation: University of Wisconsin-Madison, Madison, WI 53706, USA. lagally@engr.wisc.edu.

ABSTRACT
An approach has been developed to produce silver nanoparticles (AgNPs) rapidly on semiconductor wafers using electrochemical deposition. The closely packed AgNPs have a density of up to 1.4 × 1011 cm-2 with good size uniformity. AgNPs retain their shape and position on the substrate when used as nanomasks for producing ultrahigh-density vertical nanowire arrays with controllable size, making it a one-step nanolithography technique. We demonstrate this method on Si/SiGe multilayer superlattices using electrochemical nanopatterning and plasma etching to obtain high-density Si/SiGe multilayer superlattice nanowires.

No MeSH data available.


Schematic diagram of the AgNP-based nanowire fabrication sequence. (a) Experimental setup of ECD and fabrication steps of superlattice nanowires. (b) CVD growth of 2D superlattice. (c) ECD of NPs. (d) Plasma etching to create superlattice nanowires.
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Figure 1: Schematic diagram of the AgNP-based nanowire fabrication sequence. (a) Experimental setup of ECD and fabrication steps of superlattice nanowires. (b) CVD growth of 2D superlattice. (c) ECD of NPs. (d) Plasma etching to create superlattice nanowires.

Mentions: The ECD system used in our experiment is schematically shown in Figure 1a. It consists of a function generator (Agilent 33220A, Agilent Technologies, Inc., Santa Clara, CA, USA), a voltage amplifier (Agilent 33502A, Agilent Technologies, Inc., Santa Clara, CA, USA), a glass beaker, Ag foil (99.9%, Aldrich, Sigma-Aldrich, St. Louis, MO, USA) as the anode, and the semiconductor substrate as the cathode.


Fabrication of ultrahigh-density nanowires by electrochemical nanolithography.

Chen F, Jiang H, Kiefer AM, Clausen AM, Ting YH, Wendt AE, Ding B, Lagally MG - Nanoscale Res Lett (2011)

Schematic diagram of the AgNP-based nanowire fabrication sequence. (a) Experimental setup of ECD and fabrication steps of superlattice nanowires. (b) CVD growth of 2D superlattice. (c) ECD of NPs. (d) Plasma etching to create superlattice nanowires.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211863&req=5

Figure 1: Schematic diagram of the AgNP-based nanowire fabrication sequence. (a) Experimental setup of ECD and fabrication steps of superlattice nanowires. (b) CVD growth of 2D superlattice. (c) ECD of NPs. (d) Plasma etching to create superlattice nanowires.
Mentions: The ECD system used in our experiment is schematically shown in Figure 1a. It consists of a function generator (Agilent 33220A, Agilent Technologies, Inc., Santa Clara, CA, USA), a voltage amplifier (Agilent 33502A, Agilent Technologies, Inc., Santa Clara, CA, USA), a glass beaker, Ag foil (99.9%, Aldrich, Sigma-Aldrich, St. Louis, MO, USA) as the anode, and the semiconductor substrate as the cathode.

Bottom Line: An approach has been developed to produce silver nanoparticles (AgNPs) rapidly on semiconductor wafers using electrochemical deposition.The closely packed AgNPs have a density of up to 1.4 × 1011 cm-2 with good size uniformity.AgNPs retain their shape and position on the substrate when used as nanomasks for producing ultrahigh-density vertical nanowire arrays with controllable size, making it a one-step nanolithography technique.

View Article: PubMed Central - HTML - PubMed

Affiliation: University of Wisconsin-Madison, Madison, WI 53706, USA. lagally@engr.wisc.edu.

ABSTRACT
An approach has been developed to produce silver nanoparticles (AgNPs) rapidly on semiconductor wafers using electrochemical deposition. The closely packed AgNPs have a density of up to 1.4 × 1011 cm-2 with good size uniformity. AgNPs retain their shape and position on the substrate when used as nanomasks for producing ultrahigh-density vertical nanowire arrays with controllable size, making it a one-step nanolithography technique. We demonstrate this method on Si/SiGe multilayer superlattices using electrochemical nanopatterning and plasma etching to obtain high-density Si/SiGe multilayer superlattice nanowires.

No MeSH data available.