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InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy.

Liu KW, Chang SJ, Young SJ, Hsueh TH, Hung H, Mai YC, Wang SM, Chen KJ, Wu YL, Chen YZ - Nanoscale Res Lett (2011)

Bottom Line: By inserting CrN nanoislands between AlN nucleation layer and the Si (111) substrate, it was found that we could reduce strain form Si by inserting CrN nanoisland, FWHM of the x-ray rocking curve measured from InN nanorods from 3,299 reduced to 2,115 arcsec.It is due to the larger strain from lattice miss-match of the film-like InN structure; however, the strain from lattice miss-match was obvious reduced owing to CrN nanoisland inserted.The TEM images confirmed the CrN structures and In droplets dissociation from InN, by these results, we can speculate the growth mechanism of baseball-bat-like InN nanorods.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, Republic of China. changsj@mail.ncku.edu.tw.

ABSTRACT
The authors report the influence of CrN nanoisland inserted on growth of baseball-bat InN nanorods by plasma-assisted molecular beam epitaxy under In-rich conditions. By inserting CrN nanoislands between AlN nucleation layer and the Si (111) substrate, it was found that we could reduce strain form Si by inserting CrN nanoisland, FWHM of the x-ray rocking curve measured from InN nanorods from 3,299 reduced to 2,115 arcsec. It is due to the larger strain from lattice miss-match of the film-like InN structure; however, the strain from lattice miss-match was obvious reduced owing to CrN nanoisland inserted. The TEM images confirmed the CrN structures and In droplets dissociation from InN, by these results, we can speculate the growth mechanism of baseball-bat-like InN nanorods.

No MeSH data available.


Related in: MedlinePlus

InN nanorods prepared with CrN nanoislands. (a) TEM image of InN nanorods prepared with CrN nanoislands. (b) HRTEM image and (c) SAED measured from the top region of the InN nanorods. (d) HRTEM image and (e) SAED measured from the AlN nucleation layer. (f) HRTEM image and (g) SAED measured from the dark area at the interface between InN nanorods and AlN nucleation layer.
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Figure 3: InN nanorods prepared with CrN nanoislands. (a) TEM image of InN nanorods prepared with CrN nanoislands. (b) HRTEM image and (c) SAED measured from the top region of the InN nanorods. (d) HRTEM image and (e) SAED measured from the AlN nucleation layer. (f) HRTEM image and (g) SAED measured from the dark area at the interface between InN nanorods and AlN nucleation layer.

Mentions: Figure 3a shows transmission electron microscope (TEM) image for the sample prepared with CrN nanoislands. It can be seen that the InN nanorods were vertically aligned and well separated. It was also found that these InN nanorods exhibited a baseball-bat-like shape with an obvious enlargement of the rod diameter at the top region. High-resolution TEM (HRTEM) image and selected area electron diffraction (SAED) measured from the top region of the InN nanorods were shown in Figure 3b, c, respectively. It can be seen from these figures that the InN nanorods prepared with CrN nanoislands under In-rich conditions were single crystalline and free from any vertical defects such as threading dislocations and/or screw dislocations. Figure 3d shows HRTEM image measured from the AlN nucleation layer. As shown in the HRTEM image, it was found that the AlN nucleation layer exhibited mixture of cubic (CrN) and hexagonal wurtzite (AlN) structures. Figure 3e shows SAED measured from the AlN nucleation layer. Other than the AlN-related SAED, we also observed cubic CrN (-11-1) and CrN (200) diffraction signals, which correspond to CrN d-spacings of 0.2406 and was 0.2062 nm, respectively.


InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy.

Liu KW, Chang SJ, Young SJ, Hsueh TH, Hung H, Mai YC, Wang SM, Chen KJ, Wu YL, Chen YZ - Nanoscale Res Lett (2011)

InN nanorods prepared with CrN nanoislands. (a) TEM image of InN nanorods prepared with CrN nanoislands. (b) HRTEM image and (c) SAED measured from the top region of the InN nanorods. (d) HRTEM image and (e) SAED measured from the AlN nucleation layer. (f) HRTEM image and (g) SAED measured from the dark area at the interface between InN nanorods and AlN nucleation layer.
© Copyright Policy - open-access
Related In: Results  -  Collection

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Figure 3: InN nanorods prepared with CrN nanoislands. (a) TEM image of InN nanorods prepared with CrN nanoislands. (b) HRTEM image and (c) SAED measured from the top region of the InN nanorods. (d) HRTEM image and (e) SAED measured from the AlN nucleation layer. (f) HRTEM image and (g) SAED measured from the dark area at the interface between InN nanorods and AlN nucleation layer.
Mentions: Figure 3a shows transmission electron microscope (TEM) image for the sample prepared with CrN nanoislands. It can be seen that the InN nanorods were vertically aligned and well separated. It was also found that these InN nanorods exhibited a baseball-bat-like shape with an obvious enlargement of the rod diameter at the top region. High-resolution TEM (HRTEM) image and selected area electron diffraction (SAED) measured from the top region of the InN nanorods were shown in Figure 3b, c, respectively. It can be seen from these figures that the InN nanorods prepared with CrN nanoislands under In-rich conditions were single crystalline and free from any vertical defects such as threading dislocations and/or screw dislocations. Figure 3d shows HRTEM image measured from the AlN nucleation layer. As shown in the HRTEM image, it was found that the AlN nucleation layer exhibited mixture of cubic (CrN) and hexagonal wurtzite (AlN) structures. Figure 3e shows SAED measured from the AlN nucleation layer. Other than the AlN-related SAED, we also observed cubic CrN (-11-1) and CrN (200) diffraction signals, which correspond to CrN d-spacings of 0.2406 and was 0.2062 nm, respectively.

Bottom Line: By inserting CrN nanoislands between AlN nucleation layer and the Si (111) substrate, it was found that we could reduce strain form Si by inserting CrN nanoisland, FWHM of the x-ray rocking curve measured from InN nanorods from 3,299 reduced to 2,115 arcsec.It is due to the larger strain from lattice miss-match of the film-like InN structure; however, the strain from lattice miss-match was obvious reduced owing to CrN nanoisland inserted.The TEM images confirmed the CrN structures and In droplets dissociation from InN, by these results, we can speculate the growth mechanism of baseball-bat-like InN nanorods.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, Republic of China. changsj@mail.ncku.edu.tw.

ABSTRACT
The authors report the influence of CrN nanoisland inserted on growth of baseball-bat InN nanorods by plasma-assisted molecular beam epitaxy under In-rich conditions. By inserting CrN nanoislands between AlN nucleation layer and the Si (111) substrate, it was found that we could reduce strain form Si by inserting CrN nanoisland, FWHM of the x-ray rocking curve measured from InN nanorods from 3,299 reduced to 2,115 arcsec. It is due to the larger strain from lattice miss-match of the film-like InN structure; however, the strain from lattice miss-match was obvious reduced owing to CrN nanoisland inserted. The TEM images confirmed the CrN structures and In droplets dissociation from InN, by these results, we can speculate the growth mechanism of baseball-bat-like InN nanorods.

No MeSH data available.


Related in: MedlinePlus