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InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy.

Liu KW, Chang SJ, Young SJ, Hsueh TH, Hung H, Mai YC, Wang SM, Chen KJ, Wu YL, Chen YZ - Nanoscale Res Lett (2011)

Bottom Line: By inserting CrN nanoislands between AlN nucleation layer and the Si (111) substrate, it was found that we could reduce strain form Si by inserting CrN nanoisland, FWHM of the x-ray rocking curve measured from InN nanorods from 3,299 reduced to 2,115 arcsec.It is due to the larger strain from lattice miss-match of the film-like InN structure; however, the strain from lattice miss-match was obvious reduced owing to CrN nanoisland inserted.The TEM images confirmed the CrN structures and In droplets dissociation from InN, by these results, we can speculate the growth mechanism of baseball-bat-like InN nanorods.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, Republic of China. changsj@mail.ncku.edu.tw.

ABSTRACT
The authors report the influence of CrN nanoisland inserted on growth of baseball-bat InN nanorods by plasma-assisted molecular beam epitaxy under In-rich conditions. By inserting CrN nanoislands between AlN nucleation layer and the Si (111) substrate, it was found that we could reduce strain form Si by inserting CrN nanoisland, FWHM of the x-ray rocking curve measured from InN nanorods from 3,299 reduced to 2,115 arcsec. It is due to the larger strain from lattice miss-match of the film-like InN structure; however, the strain from lattice miss-match was obvious reduced owing to CrN nanoisland inserted. The TEM images confirmed the CrN structures and In droplets dissociation from InN, by these results, we can speculate the growth mechanism of baseball-bat-like InN nanorods.

No MeSH data available.


Related in: MedlinePlus

XRCs of the InN nanorods prepared with and without the CrN nanoislands. Inset shows XRD 2θ scans of these two samples.
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Figure 2: XRCs of the InN nanorods prepared with and without the CrN nanoislands. Inset shows XRD 2θ scans of these two samples.

Mentions: Inset in Figure 2 shows x-ray diffraction (XRD) spectra measured from these two samples. It was found that four peaks located at 28.86°, 31.23°, 36.11°, and 65.34°, which correspond to Si (111), InN (0002), AlN (0002), and InN (0004), respectively. It should be noted that a smaller full-width-half-maxima (FWHMs) of AlN (0002) XRD peak of sample with CrN nanoislands was also compared with the sample without CrN nanoislands. This suggests that crystal quality of the AlN nucleation layer was improved by the insertion of the CrN nanoislands. Figure 2 shows high-resolution x-ray rocking curves (XRCs) measured from the InN (0002) peak of these two samples. It was found that XRC FWHMs measured from the samples without and with CrN nanoislands were 3,299 and 2,115 arcsec, respectively. Because of AlN structure of dot-like formation caused by CrN nanoisland, dot-like structures can release the strain from lattice mismatch and the rocksalt-structure CrN can also inhibit the extension of threading dislocation [21,22]; in the case of AlN without CrN nanoisland, AlN structure for the 2D film-like structure will not inhibit the lateral growth of InN, it not only formed InN thin films on AlN, but also result in larger strain between InN and AlN interface. Thus, the smaller XRC FWHM suggests that strain from substrate of the InN nanorods prepared with CrN nanoislands was smaller which should be attributed to the strain from lattice miss-match was released by dot-like AlN structure.


InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy.

Liu KW, Chang SJ, Young SJ, Hsueh TH, Hung H, Mai YC, Wang SM, Chen KJ, Wu YL, Chen YZ - Nanoscale Res Lett (2011)

XRCs of the InN nanorods prepared with and without the CrN nanoislands. Inset shows XRD 2θ scans of these two samples.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211861&req=5

Figure 2: XRCs of the InN nanorods prepared with and without the CrN nanoislands. Inset shows XRD 2θ scans of these two samples.
Mentions: Inset in Figure 2 shows x-ray diffraction (XRD) spectra measured from these two samples. It was found that four peaks located at 28.86°, 31.23°, 36.11°, and 65.34°, which correspond to Si (111), InN (0002), AlN (0002), and InN (0004), respectively. It should be noted that a smaller full-width-half-maxima (FWHMs) of AlN (0002) XRD peak of sample with CrN nanoislands was also compared with the sample without CrN nanoislands. This suggests that crystal quality of the AlN nucleation layer was improved by the insertion of the CrN nanoislands. Figure 2 shows high-resolution x-ray rocking curves (XRCs) measured from the InN (0002) peak of these two samples. It was found that XRC FWHMs measured from the samples without and with CrN nanoislands were 3,299 and 2,115 arcsec, respectively. Because of AlN structure of dot-like formation caused by CrN nanoisland, dot-like structures can release the strain from lattice mismatch and the rocksalt-structure CrN can also inhibit the extension of threading dislocation [21,22]; in the case of AlN without CrN nanoisland, AlN structure for the 2D film-like structure will not inhibit the lateral growth of InN, it not only formed InN thin films on AlN, but also result in larger strain between InN and AlN interface. Thus, the smaller XRC FWHM suggests that strain from substrate of the InN nanorods prepared with CrN nanoislands was smaller which should be attributed to the strain from lattice miss-match was released by dot-like AlN structure.

Bottom Line: By inserting CrN nanoislands between AlN nucleation layer and the Si (111) substrate, it was found that we could reduce strain form Si by inserting CrN nanoisland, FWHM of the x-ray rocking curve measured from InN nanorods from 3,299 reduced to 2,115 arcsec.It is due to the larger strain from lattice miss-match of the film-like InN structure; however, the strain from lattice miss-match was obvious reduced owing to CrN nanoisland inserted.The TEM images confirmed the CrN structures and In droplets dissociation from InN, by these results, we can speculate the growth mechanism of baseball-bat-like InN nanorods.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, Republic of China. changsj@mail.ncku.edu.tw.

ABSTRACT
The authors report the influence of CrN nanoisland inserted on growth of baseball-bat InN nanorods by plasma-assisted molecular beam epitaxy under In-rich conditions. By inserting CrN nanoislands between AlN nucleation layer and the Si (111) substrate, it was found that we could reduce strain form Si by inserting CrN nanoisland, FWHM of the x-ray rocking curve measured from InN nanorods from 3,299 reduced to 2,115 arcsec. It is due to the larger strain from lattice miss-match of the film-like InN structure; however, the strain from lattice miss-match was obvious reduced owing to CrN nanoisland inserted. The TEM images confirmed the CrN structures and In droplets dissociation from InN, by these results, we can speculate the growth mechanism of baseball-bat-like InN nanorods.

No MeSH data available.


Related in: MedlinePlus