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Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE.

Shih CH, Huang TH, Schuber R, Chen YL, Chang L, Lo I, Chou MM, Schaadt DM - Nanoscale Res Lett (2011)

Bottom Line: The already reported epi-taxial relationship and for M -plane GaN is confirmed.For the M -plane sample, the density of threading dislocations is around 1 × 1011 cm-2 and the stacking fault density amounts to approximately 2 × 105 cm-1.In the A-plane sample, a threading dislocation density in the same order was found, while the stacking fault density is much lower than in the M -plane sample.

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Affiliation: Institute for Applied Physics/DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany. ralf.schuber@kit.edu.

ABSTRACT
We have investigated the structure of non-polar GaN, both on the M - and A-plane, grown on LiGaO2 by plasma-assisted molecular beam epitaxy. The epitaxial relationship and the microstructure of the GaN films are investigated by transmission electron microscopy (TEM). The already reported epi-taxial relationship and for M -plane GaN is confirmed. The main defects are threading dislocations and stacking faults in both samples. For the M -plane sample, the density of threading dislocations is around 1 × 1011 cm-2 and the stacking fault density amounts to approximately 2 × 105 cm-1. In the A-plane sample, a threading dislocation density in the same order was found, while the stacking fault density is much lower than in the M -plane sample.

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TEM data of the M -plane sample, with viewing direction . GaN diffraction pattern (a) and the corresponding bright field M -plane GaN film image (b).
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Figure 2: TEM data of the M -plane sample, with viewing direction . GaN diffraction pattern (a) and the corresponding bright field M -plane GaN film image (b).

Mentions: Taking a look at the M -plane GaN sample cut parallel to the A-plane in Figure 2a, a high density of partial dislocations associated with a high density of stacking faults can be seen. Figure 2b displays the electron diffraction pattern of the GaN film seen in Figure 2a. The diffraction spots show streaks along the [0001] direction, giving strong evidence toward a high density of stacking faults in the film.


Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE.

Shih CH, Huang TH, Schuber R, Chen YL, Chang L, Lo I, Chou MM, Schaadt DM - Nanoscale Res Lett (2011)

TEM data of the M -plane sample, with viewing direction . GaN diffraction pattern (a) and the corresponding bright field M -plane GaN film image (b).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211842&req=5

Figure 2: TEM data of the M -plane sample, with viewing direction . GaN diffraction pattern (a) and the corresponding bright field M -plane GaN film image (b).
Mentions: Taking a look at the M -plane GaN sample cut parallel to the A-plane in Figure 2a, a high density of partial dislocations associated with a high density of stacking faults can be seen. Figure 2b displays the electron diffraction pattern of the GaN film seen in Figure 2a. The diffraction spots show streaks along the [0001] direction, giving strong evidence toward a high density of stacking faults in the film.

Bottom Line: The already reported epi-taxial relationship and for M -plane GaN is confirmed.For the M -plane sample, the density of threading dislocations is around 1 × 1011 cm-2 and the stacking fault density amounts to approximately 2 × 105 cm-1.In the A-plane sample, a threading dislocation density in the same order was found, while the stacking fault density is much lower than in the M -plane sample.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute for Applied Physics/DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany. ralf.schuber@kit.edu.

ABSTRACT
We have investigated the structure of non-polar GaN, both on the M - and A-plane, grown on LiGaO2 by plasma-assisted molecular beam epitaxy. The epitaxial relationship and the microstructure of the GaN films are investigated by transmission electron microscopy (TEM). The already reported epi-taxial relationship and for M -plane GaN is confirmed. The main defects are threading dislocations and stacking faults in both samples. For the M -plane sample, the density of threading dislocations is around 1 × 1011 cm-2 and the stacking fault density amounts to approximately 2 × 105 cm-1. In the A-plane sample, a threading dislocation density in the same order was found, while the stacking fault density is much lower than in the M -plane sample.

No MeSH data available.


Related in: MedlinePlus