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Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE.

Shih CH, Huang TH, Schuber R, Chen YL, Chang L, Lo I, Chou MM, Schaadt DM - Nanoscale Res Lett (2011)

Bottom Line: The already reported epi-taxial relationship and for M -plane GaN is confirmed.For the M -plane sample, the density of threading dislocations is around 1 × 1011 cm-2 and the stacking fault density amounts to approximately 2 × 105 cm-1.In the A-plane sample, a threading dislocation density in the same order was found, while the stacking fault density is much lower than in the M -plane sample.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute for Applied Physics/DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany. ralf.schuber@kit.edu.

ABSTRACT
We have investigated the structure of non-polar GaN, both on the M - and A-plane, grown on LiGaO2 by plasma-assisted molecular beam epitaxy. The epitaxial relationship and the microstructure of the GaN films are investigated by transmission electron microscopy (TEM). The already reported epi-taxial relationship and for M -plane GaN is confirmed. The main defects are threading dislocations and stacking faults in both samples. For the M -plane sample, the density of threading dislocations is around 1 × 1011 cm-2 and the stacking fault density amounts to approximately 2 × 105 cm-1. In the A-plane sample, a threading dislocation density in the same order was found, while the stacking fault density is much lower than in the M -plane sample.

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TEM data of the M -plane sample, with viewing direction [0001]. Parts (a) and (b) display the electron diffraction patterns of the GaN film and the LGO substrate seen in the bright field image of the M -plane GaN film (c), respectively.
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Figure 1: TEM data of the M -plane sample, with viewing direction [0001]. Parts (a) and (b) display the electron diffraction patterns of the GaN film and the LGO substrate seen in the bright field image of the M -plane GaN film (c), respectively.

Mentions: The epitaxial relationship of the M -plane GaN sample can be deduced from Figure 1a and 1b, where the diffraction patterns taken from the GaN film and the LGO substrate, seen in Figure 1c, are depicted. From the patterns, it is clear that , and . In Figure 1c, showing a bright field image of the sample cut parallel to the C -plane, a high density of threading dislocations is apparent. The bright areas in the substrate located directly at the interface of the substrate and the epi layer represent holes in the TEM sample caused by the electron irradiation of the transmission electron microscope. Since LGO is very sensitive to electron bombardment, it is very difficult to obtain good quality high-resolution images of this material. This issue is also discussed regarding reflection high-energy electron diffraction measurements in the growth procedure [2].


Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE.

Shih CH, Huang TH, Schuber R, Chen YL, Chang L, Lo I, Chou MM, Schaadt DM - Nanoscale Res Lett (2011)

TEM data of the M -plane sample, with viewing direction [0001]. Parts (a) and (b) display the electron diffraction patterns of the GaN film and the LGO substrate seen in the bright field image of the M -plane GaN film (c), respectively.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211842&req=5

Figure 1: TEM data of the M -plane sample, with viewing direction [0001]. Parts (a) and (b) display the electron diffraction patterns of the GaN film and the LGO substrate seen in the bright field image of the M -plane GaN film (c), respectively.
Mentions: The epitaxial relationship of the M -plane GaN sample can be deduced from Figure 1a and 1b, where the diffraction patterns taken from the GaN film and the LGO substrate, seen in Figure 1c, are depicted. From the patterns, it is clear that , and . In Figure 1c, showing a bright field image of the sample cut parallel to the C -plane, a high density of threading dislocations is apparent. The bright areas in the substrate located directly at the interface of the substrate and the epi layer represent holes in the TEM sample caused by the electron irradiation of the transmission electron microscope. Since LGO is very sensitive to electron bombardment, it is very difficult to obtain good quality high-resolution images of this material. This issue is also discussed regarding reflection high-energy electron diffraction measurements in the growth procedure [2].

Bottom Line: The already reported epi-taxial relationship and for M -plane GaN is confirmed.For the M -plane sample, the density of threading dislocations is around 1 × 1011 cm-2 and the stacking fault density amounts to approximately 2 × 105 cm-1.In the A-plane sample, a threading dislocation density in the same order was found, while the stacking fault density is much lower than in the M -plane sample.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute for Applied Physics/DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany. ralf.schuber@kit.edu.

ABSTRACT
We have investigated the structure of non-polar GaN, both on the M - and A-plane, grown on LiGaO2 by plasma-assisted molecular beam epitaxy. The epitaxial relationship and the microstructure of the GaN films are investigated by transmission electron microscopy (TEM). The already reported epi-taxial relationship and for M -plane GaN is confirmed. The main defects are threading dislocations and stacking faults in both samples. For the M -plane sample, the density of threading dislocations is around 1 × 1011 cm-2 and the stacking fault density amounts to approximately 2 × 105 cm-1. In the A-plane sample, a threading dislocation density in the same order was found, while the stacking fault density is much lower than in the M -plane sample.

No MeSH data available.


Related in: MedlinePlus