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The Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001) GaAs Surface

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ABSTRACT

In this work, we study metal droplets on a semiconductor surface that are the initial stage for both droplet epitaxy and local droplet etching. The distributions of droplet geometrical parameters such as height, radius and volume help to understand the droplet formation that strongly influences subsequent nanohole etching. To investigate the etching and intermixing processes, we offer a new method of wetting angle analysis. The aspect ratio that is defined as the ratio of the height to radius was used as an estimation of wetting angle which depends on the droplet material. The investigation of the wetting angle and the estimation of indium content revealed significant materials intermixing during the deposition time. AFM measurements reveal the presence of two droplet groups that is in agreement with nanohole investigations. To explain this observation, we consider arsenic evaporation and consequent change in the initial substrate. On the basis of our analysis, we suggest the model of droplet evolution and the formation of two droplet groups.

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The scheme of indium droplet on GaAs substrate considered as a three-phase system. The material fluxes are marked with the arrows. The dashed arrows refer to the fluxes of gallium and indium.
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Figure 6: The scheme of indium droplet on GaAs substrate considered as a three-phase system. The material fluxes are marked with the arrows. The dashed arrows refer to the fluxes of gallium and indium.

Mentions: The bimodality effect was obtained before for different parameters of the nanoholes [12,15,16] that are the final result of local droplet etching. Having revealed the bimodality of initial droplet parameters, we suppose that all bimodalities are a consequence of some fundamental mechanisms of droplet formation and evolution in the early stage of LDE. To analyze these processes within thermodynamics approach, we consider the droplet, the substrate and chamber volume as a three-phase system according to the scheme presented on Figure 6. This general scheme can be used for both the process of growth where we take into account simultaneous etching and the post-growth period when an external indium flux should be excluded.


The Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001) GaAs Surface
The scheme of indium droplet on GaAs substrate considered as a three-phase system. The material fluxes are marked with the arrows. The dashed arrows refer to the fluxes of gallium and indium.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211836&req=5

Figure 6: The scheme of indium droplet on GaAs substrate considered as a three-phase system. The material fluxes are marked with the arrows. The dashed arrows refer to the fluxes of gallium and indium.
Mentions: The bimodality effect was obtained before for different parameters of the nanoholes [12,15,16] that are the final result of local droplet etching. Having revealed the bimodality of initial droplet parameters, we suppose that all bimodalities are a consequence of some fundamental mechanisms of droplet formation and evolution in the early stage of LDE. To analyze these processes within thermodynamics approach, we consider the droplet, the substrate and chamber volume as a three-phase system according to the scheme presented on Figure 6. This general scheme can be used for both the process of growth where we take into account simultaneous etching and the post-growth period when an external indium flux should be excluded.

View Article: PubMed Central - HTML - PubMed

ABSTRACT

In this work, we study metal droplets on a semiconductor surface that are the initial stage for both droplet epitaxy and local droplet etching. The distributions of droplet geometrical parameters such as height, radius and volume help to understand the droplet formation that strongly influences subsequent nanohole etching. To investigate the etching and intermixing processes, we offer a new method of wetting angle analysis. The aspect ratio that is defined as the ratio of the height to radius was used as an estimation of wetting angle which depends on the droplet material. The investigation of the wetting angle and the estimation of indium content revealed significant materials intermixing during the deposition time. AFM measurements reveal the presence of two droplet groups that is in agreement with nanohole investigations. To explain this observation, we consider arsenic evaporation and consequent change in the initial substrate. On the basis of our analysis, we suggest the model of droplet evolution and the formation of two droplet groups.

No MeSH data available.


Related in: MedlinePlus