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The Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001) GaAs Surface

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ABSTRACT

In this work, we study metal droplets on a semiconductor surface that are the initial stage for both droplet epitaxy and local droplet etching. The distributions of droplet geometrical parameters such as height, radius and volume help to understand the droplet formation that strongly influences subsequent nanohole etching. To investigate the etching and intermixing processes, we offer a new method of wetting angle analysis. The aspect ratio that is defined as the ratio of the height to radius was used as an estimation of wetting angle which depends on the droplet material. The investigation of the wetting angle and the estimation of indium content revealed significant materials intermixing during the deposition time. AFM measurements reveal the presence of two droplet groups that is in agreement with nanohole investigations. To explain this observation, we consider arsenic evaporation and consequent change in the initial substrate. On the basis of our analysis, we suggest the model of droplet evolution and the formation of two droplet groups.

No MeSH data available.


The histogram of a volume distribution for gallium droplets. The decomposition into Gaussians is shown, and the values of the peak centers are presented in the inset.
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Figure 5: The histogram of a volume distribution for gallium droplets. The decomposition into Gaussians is shown, and the values of the peak centers are presented in the inset.

Mentions: While gallium droplets certainly demonstrate a single peak of the aspect ratio, their volume distribution reveals the coexistence of large and small droplets varying by the volume approximately by a factor of two, as it is seen in Figure 5. The presence of the two pronounced groups of droplets should lead to the subsequent formation of the bimodal nanohole distribution that was obtained in some experiments [12,15]. Estimating the volume ratio of the deep and flat holes fabricated by the etching with gallium droplets in [15], we found that it is in a good agreement with the droplet volume ratio in our experiment.


The Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001) GaAs Surface
The histogram of a volume distribution for gallium droplets. The decomposition into Gaussians is shown, and the values of the peak centers are presented in the inset.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211836&req=5

Figure 5: The histogram of a volume distribution for gallium droplets. The decomposition into Gaussians is shown, and the values of the peak centers are presented in the inset.
Mentions: While gallium droplets certainly demonstrate a single peak of the aspect ratio, their volume distribution reveals the coexistence of large and small droplets varying by the volume approximately by a factor of two, as it is seen in Figure 5. The presence of the two pronounced groups of droplets should lead to the subsequent formation of the bimodal nanohole distribution that was obtained in some experiments [12,15]. Estimating the volume ratio of the deep and flat holes fabricated by the etching with gallium droplets in [15], we found that it is in a good agreement with the droplet volume ratio in our experiment.

View Article: PubMed Central - HTML - PubMed

ABSTRACT

In this work, we study metal droplets on a semiconductor surface that are the initial stage for both droplet epitaxy and local droplet etching. The distributions of droplet geometrical parameters such as height, radius and volume help to understand the droplet formation that strongly influences subsequent nanohole etching. To investigate the etching and intermixing processes, we offer a new method of wetting angle analysis. The aspect ratio that is defined as the ratio of the height to radius was used as an estimation of wetting angle which depends on the droplet material. The investigation of the wetting angle and the estimation of indium content revealed significant materials intermixing during the deposition time. AFM measurements reveal the presence of two droplet groups that is in agreement with nanohole investigations. To explain this observation, we consider arsenic evaporation and consequent change in the initial substrate. On the basis of our analysis, we suggest the model of droplet evolution and the formation of two droplet groups.

No MeSH data available.