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The Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001) GaAs Surface

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ABSTRACT

In this work, we study metal droplets on a semiconductor surface that are the initial stage for both droplet epitaxy and local droplet etching. The distributions of droplet geometrical parameters such as height, radius and volume help to understand the droplet formation that strongly influences subsequent nanohole etching. To investigate the etching and intermixing processes, we offer a new method of wetting angle analysis. The aspect ratio that is defined as the ratio of the height to radius was used as an estimation of wetting angle which depends on the droplet material. The investigation of the wetting angle and the estimation of indium content revealed significant materials intermixing during the deposition time. AFM measurements reveal the presence of two droplet groups that is in agreement with nanohole investigations. To explain this observation, we consider arsenic evaporation and consequent change in the initial substrate. On the basis of our analysis, we suggest the model of droplet evolution and the formation of two droplet groups.

No MeSH data available.


From up to bottom: aspect ratio distributions for the samples with gallium droplets and indium droplets fabricated with FIn = 0.04 and 0.16 Ml/s, correspondingly. The decompositions into Gaussians are shown.
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Figure 3: From up to bottom: aspect ratio distributions for the samples with gallium droplets and indium droplets fabricated with FIn = 0.04 and 0.16 Ml/s, correspondingly. The decompositions into Gaussians are shown.

Mentions: The histograms of the aspect ratio for the samples with both indium and gallium droplets are presented in Figure 3. As it is seen, the distributions related to the indium droplets are bimodal and in comparison with the height and radius distributions, they demonstrate even more pronounced bimodal character. Therefore, we can suppose that the droplet geometry is the same within each group, but quite different in the two obtained groups.


The Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001) GaAs Surface
From up to bottom: aspect ratio distributions for the samples with gallium droplets and indium droplets fabricated with FIn = 0.04 and 0.16 Ml/s, correspondingly. The decompositions into Gaussians are shown.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211836&req=5

Figure 3: From up to bottom: aspect ratio distributions for the samples with gallium droplets and indium droplets fabricated with FIn = 0.04 and 0.16 Ml/s, correspondingly. The decompositions into Gaussians are shown.
Mentions: The histograms of the aspect ratio for the samples with both indium and gallium droplets are presented in Figure 3. As it is seen, the distributions related to the indium droplets are bimodal and in comparison with the height and radius distributions, they demonstrate even more pronounced bimodal character. Therefore, we can suppose that the droplet geometry is the same within each group, but quite different in the two obtained groups.

View Article: PubMed Central - HTML - PubMed

ABSTRACT

In this work, we study metal droplets on a semiconductor surface that are the initial stage for both droplet epitaxy and local droplet etching. The distributions of droplet geometrical parameters such as height, radius and volume help to understand the droplet formation that strongly influences subsequent nanohole etching. To investigate the etching and intermixing processes, we offer a new method of wetting angle analysis. The aspect ratio that is defined as the ratio of the height to radius was used as an estimation of wetting angle which depends on the droplet material. The investigation of the wetting angle and the estimation of indium content revealed significant materials intermixing during the deposition time. AFM measurements reveal the presence of two droplet groups that is in agreement with nanohole investigations. To explain this observation, we consider arsenic evaporation and consequent change in the initial substrate. On the basis of our analysis, we suggest the model of droplet evolution and the formation of two droplet groups.

No MeSH data available.