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The Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001) GaAs Surface

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ABSTRACT

In this work, we study metal droplets on a semiconductor surface that are the initial stage for both droplet epitaxy and local droplet etching. The distributions of droplet geometrical parameters such as height, radius and volume help to understand the droplet formation that strongly influences subsequent nanohole etching. To investigate the etching and intermixing processes, we offer a new method of wetting angle analysis. The aspect ratio that is defined as the ratio of the height to radius was used as an estimation of wetting angle which depends on the droplet material. The investigation of the wetting angle and the estimation of indium content revealed significant materials intermixing during the deposition time. AFM measurements reveal the presence of two droplet groups that is in agreement with nanohole investigations. To explain this observation, we consider arsenic evaporation and consequent change in the initial substrate. On the basis of our analysis, we suggest the model of droplet evolution and the formation of two droplet groups.

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10 × 10 μm AFM image of GaAs substrate with indium droplets. The single droplet image 300 × 300 nm is presented in the inset.
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Figure 1: 10 × 10 μm AFM image of GaAs substrate with indium droplets. The single droplet image 300 × 300 nm is presented in the inset.

Mentions: The morphology of the surface was studied exsitu by the atomic force microscopy (AFM), using a Solver-P47H scanning probe microscope (NT-MDT). Standard silicon cantilevers were used for imaging by AFM. A typical AFM image of indium droplet array is shown in Figure 1.


The Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001) GaAs Surface
10 × 10 μm AFM image of GaAs substrate with indium droplets. The single droplet image 300 × 300 nm is presented in the inset.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211836&req=5

Figure 1: 10 × 10 μm AFM image of GaAs substrate with indium droplets. The single droplet image 300 × 300 nm is presented in the inset.
Mentions: The morphology of the surface was studied exsitu by the atomic force microscopy (AFM), using a Solver-P47H scanning probe microscope (NT-MDT). Standard silicon cantilevers were used for imaging by AFM. A typical AFM image of indium droplet array is shown in Figure 1.

View Article: PubMed Central - HTML - PubMed

ABSTRACT

In this work, we study metal droplets on a semiconductor surface that are the initial stage for both droplet epitaxy and local droplet etching. The distributions of droplet geometrical parameters such as height, radius and volume help to understand the droplet formation that strongly influences subsequent nanohole etching. To investigate the etching and intermixing processes, we offer a new method of wetting angle analysis. The aspect ratio that is defined as the ratio of the height to radius was used as an estimation of wetting angle which depends on the droplet material. The investigation of the wetting angle and the estimation of indium content revealed significant materials intermixing during the deposition time. AFM measurements reveal the presence of two droplet groups that is in agreement with nanohole investigations. To explain this observation, we consider arsenic evaporation and consequent change in the initial substrate. On the basis of our analysis, we suggest the model of droplet evolution and the formation of two droplet groups.

No MeSH data available.


Related in: MedlinePlus