Limits...
Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics

View Article: PubMed Central - HTML - PubMed

ABSTRACT

Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0.18 cm2/V·s and their on/off ratio was in the range of 104–105. The threshold voltages of the programmed and erased states were negligibly changed up to 103 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.

No MeSH data available.


Related in: MedlinePlus

Threshold voltages in programmed/erased states as a function of the number of bending cycles.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC3211505&req=5

Figure 3: Threshold voltages in programmed/erased states as a function of the number of bending cycles.

Mentions: In order to examine the effect of bending on the threshold voltage shift of the flexible ZnO/Al-NPs memory TFT, the magnitudes of the programmed and erased states were measured as shown in Figure 3. Considering breakdown of the sputtered SiO2 layer used as the tunneling oxide in this study, the device was programmed and erased by applying the voltage of ±8 V for a pulse width of 1 s. The quality of the sputtered SiO2 layer without any post-annealing is poorer than that made from thermal oxidation; note that the sputtering method without any post-annealing is utilized in this work for the fabrication of the devices on temperature-sensitive substrates. The magnitude of the tensile strain stress on the bent substrate is 0.5% and the strain is estimated using the following equation;


Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics
Threshold voltages in programmed/erased states as a function of the number of bending cycles.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211505&req=5

Figure 3: Threshold voltages in programmed/erased states as a function of the number of bending cycles.
Mentions: In order to examine the effect of bending on the threshold voltage shift of the flexible ZnO/Al-NPs memory TFT, the magnitudes of the programmed and erased states were measured as shown in Figure 3. Considering breakdown of the sputtered SiO2 layer used as the tunneling oxide in this study, the device was programmed and erased by applying the voltage of ±8 V for a pulse width of 1 s. The quality of the sputtered SiO2 layer without any post-annealing is poorer than that made from thermal oxidation; note that the sputtering method without any post-annealing is utilized in this work for the fabrication of the devices on temperature-sensitive substrates. The magnitude of the tensile strain stress on the bent substrate is 0.5% and the strain is estimated using the following equation;

View Article: PubMed Central - HTML - PubMed

ABSTRACT

Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0.18 cm2/V·s and their on/off ratio was in the range of 104–105. The threshold voltages of the programmed and erased states were negligibly changed up to 103 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.

No MeSH data available.


Related in: MedlinePlus