Limits...
Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics

View Article: PubMed Central - HTML - PubMed

ABSTRACT

Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0.18 cm2/V·s and their on/off ratio was in the range of 104–105. The threshold voltages of the programmed and erased states were negligibly changed up to 103 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.

No MeSH data available.


a Output characteristics of the flexible ZnO/Al-NPs memory TFT at selected gate voltages, and b transfer characteristics of the flexible ZnO/Al-NPs memory TFT and the reference sample (without any Al NPs).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC3211505&req=5

Figure 2: a Output characteristics of the flexible ZnO/Al-NPs memory TFT at selected gate voltages, and b transfer characteristics of the flexible ZnO/Al-NPs memory TFT and the reference sample (without any Al NPs).

Mentions: The output characteristics of a representative ZnO/Al-NPs memory TFT are shown in Figure 2a. This device operates in enhancement mode as an n-type field-effect transistor showing good performance and the on/off ratio of its drain-to-source current is 104 with the off current being as low as 10-10 A. The ZnO/Al-NPs memory TFT exhibits a sub-threshold gate voltage swing of 0.5 V/decade and the saturation mobility is estimated to be 0.18 cm2/V·s. The transfer characteristics of the unit cell are also exhibited in Figure 2b. A threshold voltage shift of 1.2 V is estimated for the ZnO/Al-NPs memory TFT when the gate voltage is swept from 0 V to a positive voltage of 5 V, whereas the transfer property of the reference sample (without any Al NPs) shows a threshold voltage shift of 0.3 V. The shift of the ZnO/Al-NPs memory TFT is due to the charge trapping in the NPs through the tunneling oxide layer. The threshold voltage shift of the reference sample comes from the charge trapping sites existing in the interface between the channel layer and control oxide layer or in the sputtered SiO2 layers.


Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics
a Output characteristics of the flexible ZnO/Al-NPs memory TFT at selected gate voltages, and b transfer characteristics of the flexible ZnO/Al-NPs memory TFT and the reference sample (without any Al NPs).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211505&req=5

Figure 2: a Output characteristics of the flexible ZnO/Al-NPs memory TFT at selected gate voltages, and b transfer characteristics of the flexible ZnO/Al-NPs memory TFT and the reference sample (without any Al NPs).
Mentions: The output characteristics of a representative ZnO/Al-NPs memory TFT are shown in Figure 2a. This device operates in enhancement mode as an n-type field-effect transistor showing good performance and the on/off ratio of its drain-to-source current is 104 with the off current being as low as 10-10 A. The ZnO/Al-NPs memory TFT exhibits a sub-threshold gate voltage swing of 0.5 V/decade and the saturation mobility is estimated to be 0.18 cm2/V·s. The transfer characteristics of the unit cell are also exhibited in Figure 2b. A threshold voltage shift of 1.2 V is estimated for the ZnO/Al-NPs memory TFT when the gate voltage is swept from 0 V to a positive voltage of 5 V, whereas the transfer property of the reference sample (without any Al NPs) shows a threshold voltage shift of 0.3 V. The shift of the ZnO/Al-NPs memory TFT is due to the charge trapping in the NPs through the tunneling oxide layer. The threshold voltage shift of the reference sample comes from the charge trapping sites existing in the interface between the channel layer and control oxide layer or in the sputtered SiO2 layers.

View Article: PubMed Central - HTML - PubMed

ABSTRACT

Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0.18 cm2/V·s and their on/off ratio was in the range of 104–105. The threshold voltages of the programmed and erased states were negligibly changed up to 103 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.

No MeSH data available.