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Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics

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ABSTRACT

Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0.18 cm2/V·s and their on/off ratio was in the range of 104–105. The threshold voltages of the programmed and erased states were negligibly changed up to 103 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.

No MeSH data available.


A schematic diagram of the flexible ZnO/Al-NPs memory TFT and the cross-sectional device structure (inset) (a), and a cross-sectional TEM image of the stacked gate layer (b). The left inset is a planar HRTEM image of Al NPs on the SiO2 layer, and the right inset shows the EDX elemental mapping of Al (cyan), Si (red), and O (blue). A photographic image showing the ZnO/Al-NPs memory TFTs on a flexible plastic substrate (c).
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Figure 1: A schematic diagram of the flexible ZnO/Al-NPs memory TFT and the cross-sectional device structure (inset) (a), and a cross-sectional TEM image of the stacked gate layer (b). The left inset is a planar HRTEM image of Al NPs on the SiO2 layer, and the right inset shows the EDX elemental mapping of Al (cyan), Si (red), and O (blue). A photographic image showing the ZnO/Al-NPs memory TFTs on a flexible plastic substrate (c).

Mentions: A schematic diagram of a representative bottom-gate ZnO TFT with Al NPs embedded in gate oxides (or a ZnO/Al-NPs memory TFT) is shown in Figure 1a. A cross-sectional HRTEM image of the stacked gate layer is exhibited in Figure 1b. The inset in Figure 1b shows the corresponding EDX elemental mapping from the HRTEM image. The EDX elemental mapping for the stacked film with a thickness of 50 nm reveals the presence of Al (cyan), Si (red), and O (blue) atoms, which originate from the embedded Al NPs between the SiO2 layers. Figure 1c depicts a photographic image of the ZnO/Al-NPs memory TFTs on a flexible plastic sheet.


Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics
A schematic diagram of the flexible ZnO/Al-NPs memory TFT and the cross-sectional device structure (inset) (a), and a cross-sectional TEM image of the stacked gate layer (b). The left inset is a planar HRTEM image of Al NPs on the SiO2 layer, and the right inset shows the EDX elemental mapping of Al (cyan), Si (red), and O (blue). A photographic image showing the ZnO/Al-NPs memory TFTs on a flexible plastic substrate (c).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211505&req=5

Figure 1: A schematic diagram of the flexible ZnO/Al-NPs memory TFT and the cross-sectional device structure (inset) (a), and a cross-sectional TEM image of the stacked gate layer (b). The left inset is a planar HRTEM image of Al NPs on the SiO2 layer, and the right inset shows the EDX elemental mapping of Al (cyan), Si (red), and O (blue). A photographic image showing the ZnO/Al-NPs memory TFTs on a flexible plastic substrate (c).
Mentions: A schematic diagram of a representative bottom-gate ZnO TFT with Al NPs embedded in gate oxides (or a ZnO/Al-NPs memory TFT) is shown in Figure 1a. A cross-sectional HRTEM image of the stacked gate layer is exhibited in Figure 1b. The inset in Figure 1b shows the corresponding EDX elemental mapping from the HRTEM image. The EDX elemental mapping for the stacked film with a thickness of 50 nm reveals the presence of Al (cyan), Si (red), and O (blue) atoms, which originate from the embedded Al NPs between the SiO2 layers. Figure 1c depicts a photographic image of the ZnO/Al-NPs memory TFTs on a flexible plastic sheet.

View Article: PubMed Central - HTML - PubMed

ABSTRACT

Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0.18 cm2/V·s and their on/off ratio was in the range of 104–105. The threshold voltages of the programmed and erased states were negligibly changed up to 103 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.

No MeSH data available.