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Formation of silicon nanodots via ion beam sputtering of ultrathin gold thin film coatings on Si.

El-Atwani O, Ortoleva S, Cimaroli A, Allain JP - Nanoscale Res Lett (2011)

Bottom Line: Structures of 11- to 14-nm Si nanodots are formed with normal incidence low-energy Ar ions of 200 eV and fluences above 2 × 1017 cm-2.In situ surface characterization during ion irradiation elucidates early stage ion mixing migration mechanism for nanodot self-organization.In particular, the evolution from gold film islands to the formation of ion-induced metastable gold silicide followed by pure Si nanodots formed with no need for impurity seeding.

View Article: PubMed Central - HTML - PubMed

Affiliation: School of Materials Engineering, Purdue University, West Lafayette, IN 47907, USA. oelatwan@purdue.edu.

ABSTRACT
Ion beam sputtering of ultrathin film Au coatings used as a physical catalyst for self-organization of Si nanostructures has been achieved by tuning the incident particle energy. This approach holds promise as a scalable nanomanufacturing parallel processing alternative to candidate nanolithography techniques. Structures of 11- to 14-nm Si nanodots are formed with normal incidence low-energy Ar ions of 200 eV and fluences above 2 × 1017 cm-2. In situ surface characterization during ion irradiation elucidates early stage ion mixing migration mechanism for nanodot self-organization. In particular, the evolution from gold film islands to the formation of ion-induced metastable gold silicide followed by pure Si nanodots formed with no need for impurity seeding.

No MeSH data available.


Surface characterization of gold and silicon in the sample. (a) In situ LEISS peaks of the three main elements on the surface of the sample (O, Si, Au). (b) In situ XPS data of gold and silicon in the sample.
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Figure 3: Surface characterization of gold and silicon in the sample. (a) In situ LEISS peaks of the three main elements on the surface of the sample (O, Si, Au). (b) In situ XPS data of gold and silicon in the sample.

Mentions: Figure 3a shows the in situ LEISS data. Before irradiation, the sample shows no silicon, and after a fluence of about 3 × 1016 cm-2, the mixing between gold and silicon begins. Since the sputtering yield of gold is higher than silicon at 200 eV (1.13 for gold and 0.15 for silicon as calculated from the Stopping and Range of Ions in Matter, SRIM 2008) [13], preferential sputtering occurs until all the gold is removed, leaving silicon and a trace of oxygen on the surface top layer of the surface. The clear presence of gold in the ISS data up to a fluence of about 2.3 × 1017 cm-2 indicates evidence for gold-silicon mixing.


Formation of silicon nanodots via ion beam sputtering of ultrathin gold thin film coatings on Si.

El-Atwani O, Ortoleva S, Cimaroli A, Allain JP - Nanoscale Res Lett (2011)

Surface characterization of gold and silicon in the sample. (a) In situ LEISS peaks of the three main elements on the surface of the sample (O, Si, Au). (b) In situ XPS data of gold and silicon in the sample.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211498&req=5

Figure 3: Surface characterization of gold and silicon in the sample. (a) In situ LEISS peaks of the three main elements on the surface of the sample (O, Si, Au). (b) In situ XPS data of gold and silicon in the sample.
Mentions: Figure 3a shows the in situ LEISS data. Before irradiation, the sample shows no silicon, and after a fluence of about 3 × 1016 cm-2, the mixing between gold and silicon begins. Since the sputtering yield of gold is higher than silicon at 200 eV (1.13 for gold and 0.15 for silicon as calculated from the Stopping and Range of Ions in Matter, SRIM 2008) [13], preferential sputtering occurs until all the gold is removed, leaving silicon and a trace of oxygen on the surface top layer of the surface. The clear presence of gold in the ISS data up to a fluence of about 2.3 × 1017 cm-2 indicates evidence for gold-silicon mixing.

Bottom Line: Structures of 11- to 14-nm Si nanodots are formed with normal incidence low-energy Ar ions of 200 eV and fluences above 2 × 1017 cm-2.In situ surface characterization during ion irradiation elucidates early stage ion mixing migration mechanism for nanodot self-organization.In particular, the evolution from gold film islands to the formation of ion-induced metastable gold silicide followed by pure Si nanodots formed with no need for impurity seeding.

View Article: PubMed Central - HTML - PubMed

Affiliation: School of Materials Engineering, Purdue University, West Lafayette, IN 47907, USA. oelatwan@purdue.edu.

ABSTRACT
Ion beam sputtering of ultrathin film Au coatings used as a physical catalyst for self-organization of Si nanostructures has been achieved by tuning the incident particle energy. This approach holds promise as a scalable nanomanufacturing parallel processing alternative to candidate nanolithography techniques. Structures of 11- to 14-nm Si nanodots are formed with normal incidence low-energy Ar ions of 200 eV and fluences above 2 × 1017 cm-2. In situ surface characterization during ion irradiation elucidates early stage ion mixing migration mechanism for nanodot self-organization. In particular, the evolution from gold film islands to the formation of ion-induced metastable gold silicide followed by pure Si nanodots formed with no need for impurity seeding.

No MeSH data available.