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Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application.

Benedicto M, Galiana B, Molina-Aldareguia JM, Monaghan S, Hurley PK, Cherkaoui K, Vazquez L, Tejedor P - Nanoscale Res Lett (2011)

Bottom Line: Pattern transfer to the HfO2 film was carried out by reactive ion beam etching using CF4 and O2 plasmas.A combination of atomic force microscopy, high-resolution scanning electron microscopy, high-resolution transmission electron microscopy, and energy-dispersive X-ray spectroscopy microanalysis was used to characterise the various etching steps of the process and the resulting HfO2/GaAs pattern morphology, structure, and chemical composition.We show that the patterning process can be applied to fabricate uniform arrays of HfO2 mesa stripes with tapered sidewalls and linewidths of 100 nm.

View Article: PubMed Central - HTML - PubMed

Affiliation: Instituto de Ciencia de Materiales de Madrid, CSIC, C/Sor Juana Inés de la Cruz 3, 28049 Madrid, Spain. ptejedor@icmm.csic.es.

ABSTRACT
Nanostructuring of ultrathin HfO2 films deposited on GaAs (001) substrates by high-resolution Lloyd's mirror laser interference nanolithography is described. Pattern transfer to the HfO2 film was carried out by reactive ion beam etching using CF4 and O2 plasmas. A combination of atomic force microscopy, high-resolution scanning electron microscopy, high-resolution transmission electron microscopy, and energy-dispersive X-ray spectroscopy microanalysis was used to characterise the various etching steps of the process and the resulting HfO2/GaAs pattern morphology, structure, and chemical composition. We show that the patterning process can be applied to fabricate uniform arrays of HfO2 mesa stripes with tapered sidewalls and linewidths of 100 nm. The exposed GaAs trenches were found to be residue-free and atomically smooth with a root-mean-square line roughness of 0.18 nm after plasma etching.PACS: Dielectric oxides 77.84.Bw, Nanoscale pattern formation 81.16.Rf, Plasma etching 52.77.Bn, Fabrication of III-V semiconductors 81.05.Ea.

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HR-SEM images of the resist and HfO2 patterns. Plan view images of (a) the resist pattern after laser interference nanolithography and (b) the resulting HfO2 nanopattern after CF4/O2 ICP-RIE and HCl/H2O cleaning.
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Figure 2: HR-SEM images of the resist and HfO2 patterns. Plan view images of (a) the resist pattern after laser interference nanolithography and (b) the resulting HfO2 nanopattern after CF4/O2 ICP-RIE and HCl/H2O cleaning.

Mentions: Pattern transfer to the HfO2 ultra thin film was investigated by HR-SEM. The 1.3 × 1.3-μm scanning electron micrographs in Figure 2 illustrate the sample morphology at two different stages of the patterning process. Figure 2a is a plan view of the sample surface after laser lithography showing the patterned resist stripes and the underlying SiO2 layer. The average values of the resist linewidth and the pitch are 119 ± 6 nm and 187 ± 6 nm, respectively. The micrograph depicted in Figure 2b is a plan view of the nanostructured surface after exposure to the sequence of CF4 and O2 plasma steps and the final HCl/H2O surface cleaning described above. The image shows well-defined HfO2-etched features on the GaAs substrate. Moreover, no evidence of HfO2 residues on the groove bottom was found when a backscattered electron detector was used to enhance the compositional contrast in the image. The average HfO2 linewidth and pitch of the nanopattern, measured from Figure 2b, were 100 ± 7 nm and 192 ± 6 nm, respectively.


Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application.

Benedicto M, Galiana B, Molina-Aldareguia JM, Monaghan S, Hurley PK, Cherkaoui K, Vazquez L, Tejedor P - Nanoscale Res Lett (2011)

HR-SEM images of the resist and HfO2 patterns. Plan view images of (a) the resist pattern after laser interference nanolithography and (b) the resulting HfO2 nanopattern after CF4/O2 ICP-RIE and HCl/H2O cleaning.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211495&req=5

Figure 2: HR-SEM images of the resist and HfO2 patterns. Plan view images of (a) the resist pattern after laser interference nanolithography and (b) the resulting HfO2 nanopattern after CF4/O2 ICP-RIE and HCl/H2O cleaning.
Mentions: Pattern transfer to the HfO2 ultra thin film was investigated by HR-SEM. The 1.3 × 1.3-μm scanning electron micrographs in Figure 2 illustrate the sample morphology at two different stages of the patterning process. Figure 2a is a plan view of the sample surface after laser lithography showing the patterned resist stripes and the underlying SiO2 layer. The average values of the resist linewidth and the pitch are 119 ± 6 nm and 187 ± 6 nm, respectively. The micrograph depicted in Figure 2b is a plan view of the nanostructured surface after exposure to the sequence of CF4 and O2 plasma steps and the final HCl/H2O surface cleaning described above. The image shows well-defined HfO2-etched features on the GaAs substrate. Moreover, no evidence of HfO2 residues on the groove bottom was found when a backscattered electron detector was used to enhance the compositional contrast in the image. The average HfO2 linewidth and pitch of the nanopattern, measured from Figure 2b, were 100 ± 7 nm and 192 ± 6 nm, respectively.

Bottom Line: Pattern transfer to the HfO2 film was carried out by reactive ion beam etching using CF4 and O2 plasmas.A combination of atomic force microscopy, high-resolution scanning electron microscopy, high-resolution transmission electron microscopy, and energy-dispersive X-ray spectroscopy microanalysis was used to characterise the various etching steps of the process and the resulting HfO2/GaAs pattern morphology, structure, and chemical composition.We show that the patterning process can be applied to fabricate uniform arrays of HfO2 mesa stripes with tapered sidewalls and linewidths of 100 nm.

View Article: PubMed Central - HTML - PubMed

Affiliation: Instituto de Ciencia de Materiales de Madrid, CSIC, C/Sor Juana Inés de la Cruz 3, 28049 Madrid, Spain. ptejedor@icmm.csic.es.

ABSTRACT
Nanostructuring of ultrathin HfO2 films deposited on GaAs (001) substrates by high-resolution Lloyd's mirror laser interference nanolithography is described. Pattern transfer to the HfO2 film was carried out by reactive ion beam etching using CF4 and O2 plasmas. A combination of atomic force microscopy, high-resolution scanning electron microscopy, high-resolution transmission electron microscopy, and energy-dispersive X-ray spectroscopy microanalysis was used to characterise the various etching steps of the process and the resulting HfO2/GaAs pattern morphology, structure, and chemical composition. We show that the patterning process can be applied to fabricate uniform arrays of HfO2 mesa stripes with tapered sidewalls and linewidths of 100 nm. The exposed GaAs trenches were found to be residue-free and atomically smooth with a root-mean-square line roughness of 0.18 nm after plasma etching.PACS: Dielectric oxides 77.84.Bw, Nanoscale pattern formation 81.16.Rf, Plasma etching 52.77.Bn, Fabrication of III-V semiconductors 81.05.Ea.

No MeSH data available.


Related in: MedlinePlus