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Materialization of single multicomposite nanowire: entrapment of ZnO nanoparticles in polyaniline nanowire.

Lee I, Park SY, Kim MJ, Yun M - Nanoscale Res Lett (2011)

Bottom Line: Entrapment of ZnO NPs was controlled via different conditions of SMNW fabrication such as an applied potential and mixture ratio of NPs and aniline solution.Furthermore, the electrical conductivity and elasticity of SMNWs show improvement over those of pure polyaniline nanowire.The new nano-multicomposite material showed synergistic effects on mechanical and electrical properties, with logarithmical change and saturation increasing ZnO NP concentration.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Electrical and Computer Engineering, University of Pittsburgh, Benedum Hall 348, Pittsburgh, PA 15261, USA. miy16@pitt.edu.

ABSTRACT
We present materialization of single multicomposite nanowire (SMNW)-entrapped ZnO nanoparticles (NPs) via an electrochemical growth method, which is a newly developed fabrication method to grow a single nanowire between a pair of pre-patterned electrodes. Entrapment of ZnO NPs was controlled via different conditions of SMNW fabrication such as an applied potential and mixture ratio of NPs and aniline solution. The controlled concentration of ZnO NP results in changes in the physical properties of the SMNWs, as shown in transmission electron microscopy images. Furthermore, the electrical conductivity and elasticity of SMNWs show improvement over those of pure polyaniline nanowire. The new nano-multicomposite material showed synergistic effects on mechanical and electrical properties, with logarithmical change and saturation increasing ZnO NP concentration.

No MeSH data available.


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HRTEM images of single PANI nanowire and SMNWs with different ZnO NPs concentrations. (a) Single 10 wt.% ZnO NPs-entrapped nanowire was extracted from the electrode and transferred to the TEM sample grid by a nanomanipulator. The SMNW was scratched laterally at the end of nanowire and detached. (b) HRTEM image of single PANI nanowire: 0 wt.% ZnO NP concentration. ZnO NPs are absent in this single nanowire. Note the good width uniformity of 137.5 nm. (c) HRTEM image of 5 wt.% ZnO NPs (width, 154 nm) and (d) 10 wt. % ZnO NPs-entrapped PANI nanowires (width, 113 nm). The diffraction pattern for each SMNW is shown in the corresponding inset. Note the ring patterns (PANI) and dots indicating randomly oriented crystalline structure (ZnO). (e) 1 wt.% ZnO NPs-entrapped PANI nanowire from applying a current of 900 nA in the growing condition. (f) 2.5 wt.% ZnO NPs-entrapped PANI nanowire from applying a current of 900 nA in the growing condition. The SMNWs of (e) and (f) show tightly agglomerated ZnO NPs inside the nanowire similar to the nanowire of (d).
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Figure 3: HRTEM images of single PANI nanowire and SMNWs with different ZnO NPs concentrations. (a) Single 10 wt.% ZnO NPs-entrapped nanowire was extracted from the electrode and transferred to the TEM sample grid by a nanomanipulator. The SMNW was scratched laterally at the end of nanowire and detached. (b) HRTEM image of single PANI nanowire: 0 wt.% ZnO NP concentration. ZnO NPs are absent in this single nanowire. Note the good width uniformity of 137.5 nm. (c) HRTEM image of 5 wt.% ZnO NPs (width, 154 nm) and (d) 10 wt. % ZnO NPs-entrapped PANI nanowires (width, 113 nm). The diffraction pattern for each SMNW is shown in the corresponding inset. Note the ring patterns (PANI) and dots indicating randomly oriented crystalline structure (ZnO). (e) 1 wt.% ZnO NPs-entrapped PANI nanowire from applying a current of 900 nA in the growing condition. (f) 2.5 wt.% ZnO NPs-entrapped PANI nanowire from applying a current of 900 nA in the growing condition. The SMNWs of (e) and (f) show tightly agglomerated ZnO NPs inside the nanowire similar to the nanowire of (d).

Mentions: For more in-depth examination of ZnO NP entrapment, a TEM was utilized. A high-resolution transmission microscopy (HRTEM) was utilized to find the diffraction pattern of individual nanowires. Figure 3a shows a 10 wt.% ZnO NP-entrapped PANI nanowire between electrodes lifted off prior to placement on a TEM grid using an focused icon beam (FIB) and a nanomanipulator. Other HRTEM images for 0, 5, and 10 wt.% ZnO NP-entrapped PANI nanowires are shown in Figure 3b, c, and 3d, respectively. Additionally, the SMNWs (1 and 2.5 wt.% ZnO NP concentration) created under different growing conditions are demonstrated in Figure 3e, f. From these HRTEM images, entrapped ZnO NPs approximately 30 to 60 nm in diameter can be observed, while the reference single-PANI nanowire (0 wt.% ZnO NP) shows a very uniform structure and a 137.5 nm width with no ZnO NPs in Figure 3b.


Materialization of single multicomposite nanowire: entrapment of ZnO nanoparticles in polyaniline nanowire.

Lee I, Park SY, Kim MJ, Yun M - Nanoscale Res Lett (2011)

HRTEM images of single PANI nanowire and SMNWs with different ZnO NPs concentrations. (a) Single 10 wt.% ZnO NPs-entrapped nanowire was extracted from the electrode and transferred to the TEM sample grid by a nanomanipulator. The SMNW was scratched laterally at the end of nanowire and detached. (b) HRTEM image of single PANI nanowire: 0 wt.% ZnO NP concentration. ZnO NPs are absent in this single nanowire. Note the good width uniformity of 137.5 nm. (c) HRTEM image of 5 wt.% ZnO NPs (width, 154 nm) and (d) 10 wt. % ZnO NPs-entrapped PANI nanowires (width, 113 nm). The diffraction pattern for each SMNW is shown in the corresponding inset. Note the ring patterns (PANI) and dots indicating randomly oriented crystalline structure (ZnO). (e) 1 wt.% ZnO NPs-entrapped PANI nanowire from applying a current of 900 nA in the growing condition. (f) 2.5 wt.% ZnO NPs-entrapped PANI nanowire from applying a current of 900 nA in the growing condition. The SMNWs of (e) and (f) show tightly agglomerated ZnO NPs inside the nanowire similar to the nanowire of (d).
© Copyright Policy - open-access
Related In: Results  -  Collection

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Figure 3: HRTEM images of single PANI nanowire and SMNWs with different ZnO NPs concentrations. (a) Single 10 wt.% ZnO NPs-entrapped nanowire was extracted from the electrode and transferred to the TEM sample grid by a nanomanipulator. The SMNW was scratched laterally at the end of nanowire and detached. (b) HRTEM image of single PANI nanowire: 0 wt.% ZnO NP concentration. ZnO NPs are absent in this single nanowire. Note the good width uniformity of 137.5 nm. (c) HRTEM image of 5 wt.% ZnO NPs (width, 154 nm) and (d) 10 wt. % ZnO NPs-entrapped PANI nanowires (width, 113 nm). The diffraction pattern for each SMNW is shown in the corresponding inset. Note the ring patterns (PANI) and dots indicating randomly oriented crystalline structure (ZnO). (e) 1 wt.% ZnO NPs-entrapped PANI nanowire from applying a current of 900 nA in the growing condition. (f) 2.5 wt.% ZnO NPs-entrapped PANI nanowire from applying a current of 900 nA in the growing condition. The SMNWs of (e) and (f) show tightly agglomerated ZnO NPs inside the nanowire similar to the nanowire of (d).
Mentions: For more in-depth examination of ZnO NP entrapment, a TEM was utilized. A high-resolution transmission microscopy (HRTEM) was utilized to find the diffraction pattern of individual nanowires. Figure 3a shows a 10 wt.% ZnO NP-entrapped PANI nanowire between electrodes lifted off prior to placement on a TEM grid using an focused icon beam (FIB) and a nanomanipulator. Other HRTEM images for 0, 5, and 10 wt.% ZnO NP-entrapped PANI nanowires are shown in Figure 3b, c, and 3d, respectively. Additionally, the SMNWs (1 and 2.5 wt.% ZnO NP concentration) created under different growing conditions are demonstrated in Figure 3e, f. From these HRTEM images, entrapped ZnO NPs approximately 30 to 60 nm in diameter can be observed, while the reference single-PANI nanowire (0 wt.% ZnO NP) shows a very uniform structure and a 137.5 nm width with no ZnO NPs in Figure 3b.

Bottom Line: Entrapment of ZnO NPs was controlled via different conditions of SMNW fabrication such as an applied potential and mixture ratio of NPs and aniline solution.Furthermore, the electrical conductivity and elasticity of SMNWs show improvement over those of pure polyaniline nanowire.The new nano-multicomposite material showed synergistic effects on mechanical and electrical properties, with logarithmical change and saturation increasing ZnO NP concentration.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Electrical and Computer Engineering, University of Pittsburgh, Benedum Hall 348, Pittsburgh, PA 15261, USA. miy16@pitt.edu.

ABSTRACT
We present materialization of single multicomposite nanowire (SMNW)-entrapped ZnO nanoparticles (NPs) via an electrochemical growth method, which is a newly developed fabrication method to grow a single nanowire between a pair of pre-patterned electrodes. Entrapment of ZnO NPs was controlled via different conditions of SMNW fabrication such as an applied potential and mixture ratio of NPs and aniline solution. The controlled concentration of ZnO NP results in changes in the physical properties of the SMNWs, as shown in transmission electron microscopy images. Furthermore, the electrical conductivity and elasticity of SMNWs show improvement over those of pure polyaniline nanowire. The new nano-multicomposite material showed synergistic effects on mechanical and electrical properties, with logarithmical change and saturation increasing ZnO NP concentration.

No MeSH data available.


Related in: MedlinePlus