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A High Diffusive Model for Nanomaterials

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ABSTRACT

Considerable attention is today devoted to the engineering of films widely used in photocatalytic, solar energy converters, photochemical and photoelectrochemical cells, dye-sensitized solar cells (DSSCs), to optimize electronic time response following photogeneration. However, the precise nature of transport processes in these systems has remained unresolved. To investigate such aspects of carrier dynamics, we have suggested a model for the calculation of correlation functions, expressed as the Fourier transform of the frequency-dependent complex conductivity σ(ω). Results are presented for the velocity correlation functions, the mean square deviation of position and the diffusion coefficient in systems, like TiO2 and doped Si, of large interest in present devices. Fast diffusion occurs in short time intervals of the order of few collision times. Consequences for efficiency of this fast response are discussed in relation to nanostructured devices.

No MeSH data available.


R2 vs. x = t/τ for 2 values of τ (ω0 = 1.12 × 1011Hz dot-dashed; ω0 = 2.24 × 1011Hz dashed) for TiO2 (m = 6me, T = 300 K). Saturation values occur at sufficiently large t.
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Figure 2: R2 vs. x = t/τ for 2 values of τ (ω0 = 1.12 × 1011Hz dot-dashed; ω0 = 2.24 × 1011Hz dashed) for TiO2 (m = 6me, T = 300 K). Saturation values occur at sufficiently large t.

Mentions: The most important characteristics of the results are illustrated by concrete examples in Figures 1, 2, 3, 4, and 5.


A High Diffusive Model for Nanomaterials
R2 vs. x = t/τ for 2 values of τ (ω0 = 1.12 × 1011Hz dot-dashed; ω0 = 2.24 × 1011Hz dashed) for TiO2 (m = 6me, T = 300 K). Saturation values occur at sufficiently large t.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211483&req=5

Figure 2: R2 vs. x = t/τ for 2 values of τ (ω0 = 1.12 × 1011Hz dot-dashed; ω0 = 2.24 × 1011Hz dashed) for TiO2 (m = 6me, T = 300 K). Saturation values occur at sufficiently large t.
Mentions: The most important characteristics of the results are illustrated by concrete examples in Figures 1, 2, 3, 4, and 5.

View Article: PubMed Central - HTML - PubMed

ABSTRACT

Considerable attention is today devoted to the engineering of films widely used in photocatalytic, solar energy converters, photochemical and photoelectrochemical cells, dye-sensitized solar cells (DSSCs), to optimize electronic time response following photogeneration. However, the precise nature of transport processes in these systems has remained unresolved. To investigate such aspects of carrier dynamics, we have suggested a model for the calculation of correlation functions, expressed as the Fourier transform of the frequency-dependent complex conductivity σ(ω). Results are presented for the velocity correlation functions, the mean square deviation of position and the diffusion coefficient in systems, like TiO2 and doped Si, of large interest in present devices. Fast diffusion occurs in short time intervals of the order of few collision times. Consequences for efficiency of this fast response are discussed in relation to nanostructured devices.

No MeSH data available.