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Long-term oxidization and phase transition of InN nanotextures.

Sarantopoulou E, Kollia Z, Dražic G, Kobe S, Antonakakis NS - Nanoscale Res Lett (2011)

Bottom Line: The long-term (6 months) oxidization of hcp-InN (wurtzite, InN-w) nanostructures (crystalline/amorphous) synthesized on Si [100] substrates is analyzed.The densely packed layers of InN-w nanostructures (5-40 nm) are shown to be oxidized by atmospheric oxygen via the formation of an intermediate amorphous In-Ox-Ny (indium oxynitride) phase to a final bi-phase hcp-InN/bcc-In2O3 nanotexture.When the oxidized area exceeds the critical size of 5 nm, the amorphous In-Ox-Ny phase eventually undergoes phase transition via a slow chemical reaction of atomic oxygen with the indium atoms, forming a single bcc In2O3 phase.

View Article: PubMed Central - HTML - PubMed

Affiliation: National Hellenic Research Foundation, Theoretical and Physical Chemistry Institute, 48 Vassileos Constantinou Avenue, Athens 11635, Greece. esarant@eie.gr.

ABSTRACT
The long-term (6 months) oxidization of hcp-InN (wurtzite, InN-w) nanostructures (crystalline/amorphous) synthesized on Si [100] substrates is analyzed. The densely packed layers of InN-w nanostructures (5-40 nm) are shown to be oxidized by atmospheric oxygen via the formation of an intermediate amorphous In-Ox-Ny (indium oxynitride) phase to a final bi-phase hcp-InN/bcc-In2O3 nanotexture. High-resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, electron energy loss spectroscopy and selected area electron diffraction are used to identify amorphous In-Ox-Ny oxynitride phase. When the oxidized area exceeds the critical size of 5 nm, the amorphous In-Ox-Ny phase eventually undergoes phase transition via a slow chemical reaction of atomic oxygen with the indium atoms, forming a single bcc In2O3 phase.

No MeSH data available.


AFM surface image of InN films deposited on Si substrate. (a) AFM image of the InN film. (b) Size distribution histogram of the InN film.
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Figure 3: AFM surface image of InN films deposited on Si substrate. (a) AFM image of the InN film. (b) Size distribution histogram of the InN film.

Mentions: At longer film deposition times (2 h, approx. 105 laser pulses, 20 mJ per pulse), the morphology of the InN film appears to be denser and thicker, with two distinct morphological features (Figure 3a). The first feature type represents irregular dendrites (Figure 3a, A), while the second feature represents nanorod-like structures (Figure 3a, B), with mean width and height being 40 and 50 nm, respectively, Figure 3b. The nanorods are growing on the top of 100-nm long (Z-direction) three-dimensional dendrite islands. The surface roughness distribution (Z-direction) (Figure 3b) is asymmetric for films grown for longer period of time. The surface roughness distribution has a major peak at 44 nm and a secondary one at 85 nm.


Long-term oxidization and phase transition of InN nanotextures.

Sarantopoulou E, Kollia Z, Dražic G, Kobe S, Antonakakis NS - Nanoscale Res Lett (2011)

AFM surface image of InN films deposited on Si substrate. (a) AFM image of the InN film. (b) Size distribution histogram of the InN film.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211480&req=5

Figure 3: AFM surface image of InN films deposited on Si substrate. (a) AFM image of the InN film. (b) Size distribution histogram of the InN film.
Mentions: At longer film deposition times (2 h, approx. 105 laser pulses, 20 mJ per pulse), the morphology of the InN film appears to be denser and thicker, with two distinct morphological features (Figure 3a). The first feature type represents irregular dendrites (Figure 3a, A), while the second feature represents nanorod-like structures (Figure 3a, B), with mean width and height being 40 and 50 nm, respectively, Figure 3b. The nanorods are growing on the top of 100-nm long (Z-direction) three-dimensional dendrite islands. The surface roughness distribution (Z-direction) (Figure 3b) is asymmetric for films grown for longer period of time. The surface roughness distribution has a major peak at 44 nm and a secondary one at 85 nm.

Bottom Line: The long-term (6 months) oxidization of hcp-InN (wurtzite, InN-w) nanostructures (crystalline/amorphous) synthesized on Si [100] substrates is analyzed.The densely packed layers of InN-w nanostructures (5-40 nm) are shown to be oxidized by atmospheric oxygen via the formation of an intermediate amorphous In-Ox-Ny (indium oxynitride) phase to a final bi-phase hcp-InN/bcc-In2O3 nanotexture.When the oxidized area exceeds the critical size of 5 nm, the amorphous In-Ox-Ny phase eventually undergoes phase transition via a slow chemical reaction of atomic oxygen with the indium atoms, forming a single bcc In2O3 phase.

View Article: PubMed Central - HTML - PubMed

Affiliation: National Hellenic Research Foundation, Theoretical and Physical Chemistry Institute, 48 Vassileos Constantinou Avenue, Athens 11635, Greece. esarant@eie.gr.

ABSTRACT
The long-term (6 months) oxidization of hcp-InN (wurtzite, InN-w) nanostructures (crystalline/amorphous) synthesized on Si [100] substrates is analyzed. The densely packed layers of InN-w nanostructures (5-40 nm) are shown to be oxidized by atmospheric oxygen via the formation of an intermediate amorphous In-Ox-Ny (indium oxynitride) phase to a final bi-phase hcp-InN/bcc-In2O3 nanotexture. High-resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, electron energy loss spectroscopy and selected area electron diffraction are used to identify amorphous In-Ox-Ny oxynitride phase. When the oxidized area exceeds the critical size of 5 nm, the amorphous In-Ox-Ny phase eventually undergoes phase transition via a slow chemical reaction of atomic oxygen with the indium atoms, forming a single bcc In2O3 phase.

No MeSH data available.