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Long-term oxidization and phase transition of InN nanotextures.

Sarantopoulou E, Kollia Z, Dražic G, Kobe S, Antonakakis NS - Nanoscale Res Lett (2011)

Bottom Line: The long-term (6 months) oxidization of hcp-InN (wurtzite, InN-w) nanostructures (crystalline/amorphous) synthesized on Si [100] substrates is analyzed.The densely packed layers of InN-w nanostructures (5-40 nm) are shown to be oxidized by atmospheric oxygen via the formation of an intermediate amorphous In-Ox-Ny (indium oxynitride) phase to a final bi-phase hcp-InN/bcc-In2O3 nanotexture.When the oxidized area exceeds the critical size of 5 nm, the amorphous In-Ox-Ny phase eventually undergoes phase transition via a slow chemical reaction of atomic oxygen with the indium atoms, forming a single bcc In2O3 phase.

View Article: PubMed Central - HTML - PubMed

Affiliation: National Hellenic Research Foundation, Theoretical and Physical Chemistry Institute, 48 Vassileos Constantinou Avenue, Athens 11635, Greece. esarant@eie.gr.

ABSTRACT
The long-term (6 months) oxidization of hcp-InN (wurtzite, InN-w) nanostructures (crystalline/amorphous) synthesized on Si [100] substrates is analyzed. The densely packed layers of InN-w nanostructures (5-40 nm) are shown to be oxidized by atmospheric oxygen via the formation of an intermediate amorphous In-Ox-Ny (indium oxynitride) phase to a final bi-phase hcp-InN/bcc-In2O3 nanotexture. High-resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, electron energy loss spectroscopy and selected area electron diffraction are used to identify amorphous In-Ox-Ny oxynitride phase. When the oxidized area exceeds the critical size of 5 nm, the amorphous In-Ox-Ny phase eventually undergoes phase transition via a slow chemical reaction of atomic oxygen with the indium atoms, forming a single bcc In2O3 phase.

No MeSH data available.


Schematic diagram of the PLD configuration. VC, stainless steel vacuum chamber; L, 157-nm laser beam; X, x-y-z-computer-controlled translation stage; T, high-purity indium foil; P, ablation plume; C, CaF2 focusing optics; W, CaF2 window; S, Si [100] substrate; Y, substrate holder stage; N, nitrogen inlet; TP, turbo molecular pump.
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Figure 1: Schematic diagram of the PLD configuration. VC, stainless steel vacuum chamber; L, 157-nm laser beam; X, x-y-z-computer-controlled translation stage; T, high-purity indium foil; P, ablation plume; C, CaF2 focusing optics; W, CaF2 window; S, Si [100] substrate; Y, substrate holder stage; N, nitrogen inlet; TP, turbo molecular pump.

Mentions: The apparatus for the PLD experiment consists of a molecular fluorine laser at 157 nm [20-23] (Lambda-Physik, LPF 200), a stainless steel vacuum chamber, a computer-controlled x-y-z translation stage, the focusing optics, and a holder with the Si [100] substrate onto which the indium nitride films are deposited (Figure 1).


Long-term oxidization and phase transition of InN nanotextures.

Sarantopoulou E, Kollia Z, Dražic G, Kobe S, Antonakakis NS - Nanoscale Res Lett (2011)

Schematic diagram of the PLD configuration. VC, stainless steel vacuum chamber; L, 157-nm laser beam; X, x-y-z-computer-controlled translation stage; T, high-purity indium foil; P, ablation plume; C, CaF2 focusing optics; W, CaF2 window; S, Si [100] substrate; Y, substrate holder stage; N, nitrogen inlet; TP, turbo molecular pump.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211480&req=5

Figure 1: Schematic diagram of the PLD configuration. VC, stainless steel vacuum chamber; L, 157-nm laser beam; X, x-y-z-computer-controlled translation stage; T, high-purity indium foil; P, ablation plume; C, CaF2 focusing optics; W, CaF2 window; S, Si [100] substrate; Y, substrate holder stage; N, nitrogen inlet; TP, turbo molecular pump.
Mentions: The apparatus for the PLD experiment consists of a molecular fluorine laser at 157 nm [20-23] (Lambda-Physik, LPF 200), a stainless steel vacuum chamber, a computer-controlled x-y-z translation stage, the focusing optics, and a holder with the Si [100] substrate onto which the indium nitride films are deposited (Figure 1).

Bottom Line: The long-term (6 months) oxidization of hcp-InN (wurtzite, InN-w) nanostructures (crystalline/amorphous) synthesized on Si [100] substrates is analyzed.The densely packed layers of InN-w nanostructures (5-40 nm) are shown to be oxidized by atmospheric oxygen via the formation of an intermediate amorphous In-Ox-Ny (indium oxynitride) phase to a final bi-phase hcp-InN/bcc-In2O3 nanotexture.When the oxidized area exceeds the critical size of 5 nm, the amorphous In-Ox-Ny phase eventually undergoes phase transition via a slow chemical reaction of atomic oxygen with the indium atoms, forming a single bcc In2O3 phase.

View Article: PubMed Central - HTML - PubMed

Affiliation: National Hellenic Research Foundation, Theoretical and Physical Chemistry Institute, 48 Vassileos Constantinou Avenue, Athens 11635, Greece. esarant@eie.gr.

ABSTRACT
The long-term (6 months) oxidization of hcp-InN (wurtzite, InN-w) nanostructures (crystalline/amorphous) synthesized on Si [100] substrates is analyzed. The densely packed layers of InN-w nanostructures (5-40 nm) are shown to be oxidized by atmospheric oxygen via the formation of an intermediate amorphous In-Ox-Ny (indium oxynitride) phase to a final bi-phase hcp-InN/bcc-In2O3 nanotexture. High-resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, electron energy loss spectroscopy and selected area electron diffraction are used to identify amorphous In-Ox-Ny oxynitride phase. When the oxidized area exceeds the critical size of 5 nm, the amorphous In-Ox-Ny phase eventually undergoes phase transition via a slow chemical reaction of atomic oxygen with the indium atoms, forming a single bcc In2O3 phase.

No MeSH data available.