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A compact model for magnetic tunnel junction (MTJ) switched by thermally assisted Spin transfer torque (TAS + STT).

Zhao W, Duval J, Klein JO, Chappert C - Nanoscale Res Lett (2011)

Bottom Line: Thermally assisted spin transfer torque [TAS + STT] is a new switching approach for magnetic tunnel junction [MTJ] nanopillars that represents the best trade-off between data reliability, power efficiency and density.In this paper, we present a compact model for MTJ switched by this approach, which integrates a number of physical models such as temperature evaluation and STT dynamic switching models.Many experimental parameters are included directly to improve the simulation accuracy.

View Article: PubMed Central - HTML - PubMed

Affiliation: IEF, Université Paris-Sud, 15 Rue Georges Clemenceau, Orsay, 91405, France. weisheng.zhao@u-psud.fr.

ABSTRACT
Thermally assisted spin transfer torque [TAS + STT] is a new switching approach for magnetic tunnel junction [MTJ] nanopillars that represents the best trade-off between data reliability, power efficiency and density. In this paper, we present a compact model for MTJ switched by this approach, which integrates a number of physical models such as temperature evaluation and STT dynamic switching models. Many experimental parameters are included directly to improve the simulation accuracy. It is programmed in the Verilog-A language and compatible with the standard IC CAD tools, providing an easy parameter configuration interface and allowing high-speed co-simulation of hybrid MTJ/CMOS circuits.

No MeSH data available.


Related in: MedlinePlus

Circuit implementation for modelling and simulation. (a) Equivalent electrical RC circuit of temperature evaluation model. (b) MTJ switching circuit; either "Vg1" or "Vg2" is set to '1' to generate the current Iswitch. RC, resistor/capacitor
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Figure 2: Circuit implementation for modelling and simulation. (a) Equivalent electrical RC circuit of temperature evaluation model. (b) MTJ switching circuit; either "Vg1" or "Vg2" is set to '1' to generate the current Iswitch. RC, resistor/capacitor

Mentions: The temperature evaluation of MTJ depends on the form and duration of switching current according to Equations 1 and 2 [17,18]. As square current pulses are often used for logic and memory circuit design and simulation, Equation 1 can be then simplified to Equations 3 and 4 to describe respectively the heating and cooling operations driven by a current pulse. This model allows simulating the thermally assisted mechanism of TAS+STT approach. An equivalent electrical circuit corresponding to Equation 1 has been included to monitor the temperature evaluation of MTJ (see Figure 2a), which is based on a simple resistor/capacitor circuit. By adding a multiplier (M0) and an adder (A0), the temperature T can be observed in real time through the voltage node Vtemp (i.e. 1V = 1K). The values of R0 and C0 are set as constant to obtain τth calculated by Equation 2,(1)(2)


A compact model for magnetic tunnel junction (MTJ) switched by thermally assisted Spin transfer torque (TAS + STT).

Zhao W, Duval J, Klein JO, Chappert C - Nanoscale Res Lett (2011)

Circuit implementation for modelling and simulation. (a) Equivalent electrical RC circuit of temperature evaluation model. (b) MTJ switching circuit; either "Vg1" or "Vg2" is set to '1' to generate the current Iswitch. RC, resistor/capacitor
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211458&req=5

Figure 2: Circuit implementation for modelling and simulation. (a) Equivalent electrical RC circuit of temperature evaluation model. (b) MTJ switching circuit; either "Vg1" or "Vg2" is set to '1' to generate the current Iswitch. RC, resistor/capacitor
Mentions: The temperature evaluation of MTJ depends on the form and duration of switching current according to Equations 1 and 2 [17,18]. As square current pulses are often used for logic and memory circuit design and simulation, Equation 1 can be then simplified to Equations 3 and 4 to describe respectively the heating and cooling operations driven by a current pulse. This model allows simulating the thermally assisted mechanism of TAS+STT approach. An equivalent electrical circuit corresponding to Equation 1 has been included to monitor the temperature evaluation of MTJ (see Figure 2a), which is based on a simple resistor/capacitor circuit. By adding a multiplier (M0) and an adder (A0), the temperature T can be observed in real time through the voltage node Vtemp (i.e. 1V = 1K). The values of R0 and C0 are set as constant to obtain τth calculated by Equation 2,(1)(2)

Bottom Line: Thermally assisted spin transfer torque [TAS + STT] is a new switching approach for magnetic tunnel junction [MTJ] nanopillars that represents the best trade-off between data reliability, power efficiency and density.In this paper, we present a compact model for MTJ switched by this approach, which integrates a number of physical models such as temperature evaluation and STT dynamic switching models.Many experimental parameters are included directly to improve the simulation accuracy.

View Article: PubMed Central - HTML - PubMed

Affiliation: IEF, Université Paris-Sud, 15 Rue Georges Clemenceau, Orsay, 91405, France. weisheng.zhao@u-psud.fr.

ABSTRACT
Thermally assisted spin transfer torque [TAS + STT] is a new switching approach for magnetic tunnel junction [MTJ] nanopillars that represents the best trade-off between data reliability, power efficiency and density. In this paper, we present a compact model for MTJ switched by this approach, which integrates a number of physical models such as temperature evaluation and STT dynamic switching models. Many experimental parameters are included directly to improve the simulation accuracy. It is programmed in the Verilog-A language and compatible with the standard IC CAD tools, providing an easy parameter configuration interface and allowing high-speed co-simulation of hybrid MTJ/CMOS circuits.

No MeSH data available.


Related in: MedlinePlus