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A compact model for magnetic tunnel junction (MTJ) switched by thermally assisted Spin transfer torque (TAS + STT).

Zhao W, Duval J, Klein JO, Chappert C - Nanoscale Res Lett (2011)

Bottom Line: Thermally assisted spin transfer torque [TAS + STT] is a new switching approach for magnetic tunnel junction [MTJ] nanopillars that represents the best trade-off between data reliability, power efficiency and density.In this paper, we present a compact model for MTJ switched by this approach, which integrates a number of physical models such as temperature evaluation and STT dynamic switching models.Many experimental parameters are included directly to improve the simulation accuracy.

View Article: PubMed Central - HTML - PubMed

Affiliation: IEF, Université Paris-Sud, 15 Rue Georges Clemenceau, Orsay, 91405, France. weisheng.zhao@u-psud.fr.

ABSTRACT
Thermally assisted spin transfer torque [TAS + STT] is a new switching approach for magnetic tunnel junction [MTJ] nanopillars that represents the best trade-off between data reliability, power efficiency and density. In this paper, we present a compact model for MTJ switched by this approach, which integrates a number of physical models such as temperature evaluation and STT dynamic switching models. Many experimental parameters are included directly to improve the simulation accuracy. It is programmed in the Verilog-A language and compatible with the standard IC CAD tools, providing an easy parameter configuration interface and allowing high-speed co-simulation of hybrid MTJ/CMOS circuits.

No MeSH data available.


Related in: MedlinePlus

TAS + STT switching approach. (a) The MTJ nanopillar with two antiferromagnetic layers. (b) Bidirectional current switches the MTJ between the parallel and anti-parallel state
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Figure 1: TAS + STT switching approach. (a) The MTJ nanopillar with two antiferromagnetic layers. (b) Bidirectional current switches the MTJ between the parallel and anti-parallel state

Mentions: Spintronics is a very rapidly emerging area of R&D (Nobel Prize 2007) that has the potential to impact significantly on the future of all aspects of electronics beyond CMOS [1]. Magnetic tunnel junctions [MTJ] is one of the most promising spintronic devices for logic and memory applications, which combines magnetism and electronics and promises high write/read speed, non-volatility, infinite endurance etc. [2]. An MTJ is a nanopillar composed of two ferromagnetic [FM] layers and one oxide thin barrier. The Tunnel MagnetoResistance [TMR] phenomenon exists in MTJs [3], which describes the different resistance value RP and RAP corresponding to the parallel or anti-parallel configuration of the relative magnetization orientations of the two FM layers, respectively. For practical applications, the magnetization direction of one FM layer is pinned as reference and that of the other FM layer is free to store the binary state (see Figure 1a). Recently, TMR = RAP-RP/RP ratio was found to be more than 604% by using the MgO oxide barrier [4] and this allows MTJ to present excellent sensing performance.


A compact model for magnetic tunnel junction (MTJ) switched by thermally assisted Spin transfer torque (TAS + STT).

Zhao W, Duval J, Klein JO, Chappert C - Nanoscale Res Lett (2011)

TAS + STT switching approach. (a) The MTJ nanopillar with two antiferromagnetic layers. (b) Bidirectional current switches the MTJ between the parallel and anti-parallel state
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211458&req=5

Figure 1: TAS + STT switching approach. (a) The MTJ nanopillar with two antiferromagnetic layers. (b) Bidirectional current switches the MTJ between the parallel and anti-parallel state
Mentions: Spintronics is a very rapidly emerging area of R&D (Nobel Prize 2007) that has the potential to impact significantly on the future of all aspects of electronics beyond CMOS [1]. Magnetic tunnel junctions [MTJ] is one of the most promising spintronic devices for logic and memory applications, which combines magnetism and electronics and promises high write/read speed, non-volatility, infinite endurance etc. [2]. An MTJ is a nanopillar composed of two ferromagnetic [FM] layers and one oxide thin barrier. The Tunnel MagnetoResistance [TMR] phenomenon exists in MTJs [3], which describes the different resistance value RP and RAP corresponding to the parallel or anti-parallel configuration of the relative magnetization orientations of the two FM layers, respectively. For practical applications, the magnetization direction of one FM layer is pinned as reference and that of the other FM layer is free to store the binary state (see Figure 1a). Recently, TMR = RAP-RP/RP ratio was found to be more than 604% by using the MgO oxide barrier [4] and this allows MTJ to present excellent sensing performance.

Bottom Line: Thermally assisted spin transfer torque [TAS + STT] is a new switching approach for magnetic tunnel junction [MTJ] nanopillars that represents the best trade-off between data reliability, power efficiency and density.In this paper, we present a compact model for MTJ switched by this approach, which integrates a number of physical models such as temperature evaluation and STT dynamic switching models.Many experimental parameters are included directly to improve the simulation accuracy.

View Article: PubMed Central - HTML - PubMed

Affiliation: IEF, Université Paris-Sud, 15 Rue Georges Clemenceau, Orsay, 91405, France. weisheng.zhao@u-psud.fr.

ABSTRACT
Thermally assisted spin transfer torque [TAS + STT] is a new switching approach for magnetic tunnel junction [MTJ] nanopillars that represents the best trade-off between data reliability, power efficiency and density. In this paper, we present a compact model for MTJ switched by this approach, which integrates a number of physical models such as temperature evaluation and STT dynamic switching models. Many experimental parameters are included directly to improve the simulation accuracy. It is programmed in the Verilog-A language and compatible with the standard IC CAD tools, providing an easy parameter configuration interface and allowing high-speed co-simulation of hybrid MTJ/CMOS circuits.

No MeSH data available.


Related in: MedlinePlus