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Freestanding HfO2 grating fabricated by fast atom beam etching.

Wang Y, Wu T, Kanamori Y, Hane K - Nanoscale Res Lett (2011)

Bottom Line: The silicon substrate beneath the HfO2 grating region is removed to make the HfO2 grating suspend in space.Period- and polarization-dependent optical responses of fabricated HfO2 gratings are experimentally characterized in the reflectance measurements.The simple process is feasible for fabricating freestanding HfO2 grating that is a potential candidate for single layer dielectric reflector.PACS: 73.40.Ty; 42.70.Qs; 81.65.Cf.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute of Communication Technology, Nanjing University of Posts and Telecommunications, Nanjing, Jiang-Su 210003, People's Republic of China. wyjjy@yahoo.com.

ABSTRACT
We report here the fabrication of freestanding HfO2 grating by combining fast atom beam etching (FAB) of HfO2 film with dry etching of silicon substrate. HfO2 film is deposited onto silicon substrate by electron beam evaporator. The grating patterns are then defined by electron beam lithography and transferred to HfO2 film by FAB etching. The silicon substrate beneath the HfO2 grating region is removed to make the HfO2 grating suspend in space. Period- and polarization-dependent optical responses of fabricated HfO2 gratings are experimentally characterized in the reflectance measurements. The simple process is feasible for fabricating freestanding HfO2 grating that is a potential candidate for single layer dielectric reflector.PACS: 73.40.Ty; 42.70.Qs; 81.65.Cf.

No MeSH data available.


Related in: MedlinePlus

SEM images of fabricated freestanding HfO2 grating. (a) cross section SEM image of HfO2/Si platform; (b) a fabricated freestanding HfO2 grating; (c) and (d) zoom-in SEM images of 1040 nm period HfO2 gratings with the grating widths Wt of 500 nm and 440 nm, respectively.
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Figure 2: SEM images of fabricated freestanding HfO2 grating. (a) cross section SEM image of HfO2/Si platform; (b) a fabricated freestanding HfO2 grating; (c) and (d) zoom-in SEM images of 1040 nm period HfO2 gratings with the grating widths Wt of 500 nm and 440 nm, respectively.

Mentions: Figure 2(a) shows one scanning electron microscope (SEM) image of the cross-section of the HfO2/Si platform. The thickness of HfO2 film is about 180 nm. The FAB is made up of the energetic neutral beam flux with high directionality and thus, the manufacturing method is capable of high anisotropic etching of HfO2 film. There is no special requirement of etching mask, and EB resist can serve as an etching mask. Fabricated freestanding HfO2 grating illustrated in Figure 2(b) consists of 60-period grating with the grating length of 60 μm, and air is the low refractive index materials on the bottom and top. The grating period and the grating width are expressed by P and W. The duty ratio D(= W/P) is defined as the ratio of the grating width to the grating period. Figures 2(c) and 2(d) illustrate the zoom-in SEM images of the fabricated freestanding HfO2 gratings, where the grating period is 1040 nm and the grating height is about 180 nm, the same as the HfO2 film thickness. Since the thickness of EB resist varies due to the proximity effect in EB lithography, the HfO2 gratings generated in reality are trapezoidal profiles and deviate from the designed rectangular elements. The corresponding bottom grating widths Wb are measured ~780 nm and ~670 nm, and the top grating widths Wt are about 500 nm and 440 nm, respectively.


Freestanding HfO2 grating fabricated by fast atom beam etching.

Wang Y, Wu T, Kanamori Y, Hane K - Nanoscale Res Lett (2011)

SEM images of fabricated freestanding HfO2 grating. (a) cross section SEM image of HfO2/Si platform; (b) a fabricated freestanding HfO2 grating; (c) and (d) zoom-in SEM images of 1040 nm period HfO2 gratings with the grating widths Wt of 500 nm and 440 nm, respectively.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211457&req=5

Figure 2: SEM images of fabricated freestanding HfO2 grating. (a) cross section SEM image of HfO2/Si platform; (b) a fabricated freestanding HfO2 grating; (c) and (d) zoom-in SEM images of 1040 nm period HfO2 gratings with the grating widths Wt of 500 nm and 440 nm, respectively.
Mentions: Figure 2(a) shows one scanning electron microscope (SEM) image of the cross-section of the HfO2/Si platform. The thickness of HfO2 film is about 180 nm. The FAB is made up of the energetic neutral beam flux with high directionality and thus, the manufacturing method is capable of high anisotropic etching of HfO2 film. There is no special requirement of etching mask, and EB resist can serve as an etching mask. Fabricated freestanding HfO2 grating illustrated in Figure 2(b) consists of 60-period grating with the grating length of 60 μm, and air is the low refractive index materials on the bottom and top. The grating period and the grating width are expressed by P and W. The duty ratio D(= W/P) is defined as the ratio of the grating width to the grating period. Figures 2(c) and 2(d) illustrate the zoom-in SEM images of the fabricated freestanding HfO2 gratings, where the grating period is 1040 nm and the grating height is about 180 nm, the same as the HfO2 film thickness. Since the thickness of EB resist varies due to the proximity effect in EB lithography, the HfO2 gratings generated in reality are trapezoidal profiles and deviate from the designed rectangular elements. The corresponding bottom grating widths Wb are measured ~780 nm and ~670 nm, and the top grating widths Wt are about 500 nm and 440 nm, respectively.

Bottom Line: The silicon substrate beneath the HfO2 grating region is removed to make the HfO2 grating suspend in space.Period- and polarization-dependent optical responses of fabricated HfO2 gratings are experimentally characterized in the reflectance measurements.The simple process is feasible for fabricating freestanding HfO2 grating that is a potential candidate for single layer dielectric reflector.PACS: 73.40.Ty; 42.70.Qs; 81.65.Cf.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute of Communication Technology, Nanjing University of Posts and Telecommunications, Nanjing, Jiang-Su 210003, People's Republic of China. wyjjy@yahoo.com.

ABSTRACT
We report here the fabrication of freestanding HfO2 grating by combining fast atom beam etching (FAB) of HfO2 film with dry etching of silicon substrate. HfO2 film is deposited onto silicon substrate by electron beam evaporator. The grating patterns are then defined by electron beam lithography and transferred to HfO2 film by FAB etching. The silicon substrate beneath the HfO2 grating region is removed to make the HfO2 grating suspend in space. Period- and polarization-dependent optical responses of fabricated HfO2 gratings are experimentally characterized in the reflectance measurements. The simple process is feasible for fabricating freestanding HfO2 grating that is a potential candidate for single layer dielectric reflector.PACS: 73.40.Ty; 42.70.Qs; 81.65.Cf.

No MeSH data available.


Related in: MedlinePlus