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Freestanding HfO2 grating fabricated by fast atom beam etching.

Wang Y, Wu T, Kanamori Y, Hane K - Nanoscale Res Lett (2011)

Bottom Line: The silicon substrate beneath the HfO2 grating region is removed to make the HfO2 grating suspend in space.Period- and polarization-dependent optical responses of fabricated HfO2 gratings are experimentally characterized in the reflectance measurements.The simple process is feasible for fabricating freestanding HfO2 grating that is a potential candidate for single layer dielectric reflector.PACS: 73.40.Ty; 42.70.Qs; 81.65.Cf.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute of Communication Technology, Nanjing University of Posts and Telecommunications, Nanjing, Jiang-Su 210003, People's Republic of China. wyjjy@yahoo.com.

ABSTRACT
We report here the fabrication of freestanding HfO2 grating by combining fast atom beam etching (FAB) of HfO2 film with dry etching of silicon substrate. HfO2 film is deposited onto silicon substrate by electron beam evaporator. The grating patterns are then defined by electron beam lithography and transferred to HfO2 film by FAB etching. The silicon substrate beneath the HfO2 grating region is removed to make the HfO2 grating suspend in space. Period- and polarization-dependent optical responses of fabricated HfO2 gratings are experimentally characterized in the reflectance measurements. The simple process is feasible for fabricating freestanding HfO2 grating that is a potential candidate for single layer dielectric reflector.PACS: 73.40.Ty; 42.70.Qs; 81.65.Cf.

No MeSH data available.


Fabrication process of freestanding HfO2 grating.
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Figure 1: Fabrication process of freestanding HfO2 grating.

Mentions: Figure 1 schematically illustrates the fabrication process of freestanding HfO2 gratings, which are implemented on a silicon substrate. The process starts from the blank deposition of HfO2 film on the silicon substrate with an electron beam (EB) evaporator (step a). A positive EB ZEP520A resist is then spin-coated onto the HfO2 layer, and grating patterns are patterned in ZEP520A resist using EB lithography (step b). Subsequently, the patterns are transferred to HfO2 layer by FAB etching (step c). FAB etching, which is generated by the neutralization of ions extracted from direct-current SF6 plasma (Ebara, FAB-60 ml), is performed with a SF6 gas of 5.6 sccm at the high voltage of 2.0 KV and accelerated current of 20 mA. The HfO2 gratings are then released by a combination of anisotropic and isotropic dry etching of silicon, which makes the HfO2 grating freely suspend (step d). The anisotropic etching of silicon is carried out to produce vertical silicon trenches and the isotropic etching is used to release the HfO2 gratings laterally, where the remained EB resist and HfO2 film act as the etching mask. The freestanding HfO2 gratings are finally generated by removing the residual resist (step e).


Freestanding HfO2 grating fabricated by fast atom beam etching.

Wang Y, Wu T, Kanamori Y, Hane K - Nanoscale Res Lett (2011)

Fabrication process of freestanding HfO2 grating.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211457&req=5

Figure 1: Fabrication process of freestanding HfO2 grating.
Mentions: Figure 1 schematically illustrates the fabrication process of freestanding HfO2 gratings, which are implemented on a silicon substrate. The process starts from the blank deposition of HfO2 film on the silicon substrate with an electron beam (EB) evaporator (step a). A positive EB ZEP520A resist is then spin-coated onto the HfO2 layer, and grating patterns are patterned in ZEP520A resist using EB lithography (step b). Subsequently, the patterns are transferred to HfO2 layer by FAB etching (step c). FAB etching, which is generated by the neutralization of ions extracted from direct-current SF6 plasma (Ebara, FAB-60 ml), is performed with a SF6 gas of 5.6 sccm at the high voltage of 2.0 KV and accelerated current of 20 mA. The HfO2 gratings are then released by a combination of anisotropic and isotropic dry etching of silicon, which makes the HfO2 grating freely suspend (step d). The anisotropic etching of silicon is carried out to produce vertical silicon trenches and the isotropic etching is used to release the HfO2 gratings laterally, where the remained EB resist and HfO2 film act as the etching mask. The freestanding HfO2 gratings are finally generated by removing the residual resist (step e).

Bottom Line: The silicon substrate beneath the HfO2 grating region is removed to make the HfO2 grating suspend in space.Period- and polarization-dependent optical responses of fabricated HfO2 gratings are experimentally characterized in the reflectance measurements.The simple process is feasible for fabricating freestanding HfO2 grating that is a potential candidate for single layer dielectric reflector.PACS: 73.40.Ty; 42.70.Qs; 81.65.Cf.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute of Communication Technology, Nanjing University of Posts and Telecommunications, Nanjing, Jiang-Su 210003, People's Republic of China. wyjjy@yahoo.com.

ABSTRACT
We report here the fabrication of freestanding HfO2 grating by combining fast atom beam etching (FAB) of HfO2 film with dry etching of silicon substrate. HfO2 film is deposited onto silicon substrate by electron beam evaporator. The grating patterns are then defined by electron beam lithography and transferred to HfO2 film by FAB etching. The silicon substrate beneath the HfO2 grating region is removed to make the HfO2 grating suspend in space. Period- and polarization-dependent optical responses of fabricated HfO2 gratings are experimentally characterized in the reflectance measurements. The simple process is feasible for fabricating freestanding HfO2 grating that is a potential candidate for single layer dielectric reflector.PACS: 73.40.Ty; 42.70.Qs; 81.65.Cf.

No MeSH data available.