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Scaling properties of ballistic nano-transistors.

Wulf U, Krahlisch M, Richter H - Nanoscale Res Lett (2011)

Bottom Line: In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport.In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail.Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well.

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Affiliation: BTU Cottbus, Fakultät 1, Postfach 101344, 03013 Cottbus, Germany. fa-wulf@web.de.

ABSTRACT
Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport. In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail. Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well. In qualitative agreement with the experiments the ID - VG-traces for small drain voltages show thermally activated transport below the threshold gate voltage. In contrast, at large drain voltages the gate-voltage dependence is weaker. As can be expected in our relatively simple model, the theoretical drain current is larger than the experimental one by a little less than a decade.

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Drain characteristics in experiment and theory. (a) Experimental drain characteristics for a nano-transistor with L = 10 nm [4,5]. Our assumption for the LTTis marked with a green dashed line leading to a threshold gate voltage of  = 0.15V. (b) Theoretical drain characteristics for l = 10 and u = 0.1 (see Fig. 5a) with the green dashed threshold characteristic at  = -0.05.
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Figure 7: Drain characteristics in experiment and theory. (a) Experimental drain characteristics for a nano-transistor with L = 10 nm [4,5]. Our assumption for the LTTis marked with a green dashed line leading to a threshold gate voltage of = 0.15V. (b) Theoretical drain characteristics for l = 10 and u = 0.1 (see Fig. 5a) with the green dashed threshold characteristic at = -0.05.

Mentions: We discuss our numerical results on the background of experimental characteristics for a 10 nm gate length transistor [4,5] reproduced in Figure 7. As demonstrated in Sect. "Parameters in experimental nano-FETs" one obtains from Equation 21 a characteristic length of λ ~ 1 nm under reasonable assumptions. For the experimental 10 nm gate length, we thus obtain l = L/λ = 10. Furthermore, Equation 20 yields the value of εF = 0.35 eV. The conversion of the experimental drain voltage V into the theoretical parameter vD is given by(22)


Scaling properties of ballistic nano-transistors.

Wulf U, Krahlisch M, Richter H - Nanoscale Res Lett (2011)

Drain characteristics in experiment and theory. (a) Experimental drain characteristics for a nano-transistor with L = 10 nm [4,5]. Our assumption for the LTTis marked with a green dashed line leading to a threshold gate voltage of  = 0.15V. (b) Theoretical drain characteristics for l = 10 and u = 0.1 (see Fig. 5a) with the green dashed threshold characteristic at  = -0.05.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211455&req=5

Figure 7: Drain characteristics in experiment and theory. (a) Experimental drain characteristics for a nano-transistor with L = 10 nm [4,5]. Our assumption for the LTTis marked with a green dashed line leading to a threshold gate voltage of = 0.15V. (b) Theoretical drain characteristics for l = 10 and u = 0.1 (see Fig. 5a) with the green dashed threshold characteristic at = -0.05.
Mentions: We discuss our numerical results on the background of experimental characteristics for a 10 nm gate length transistor [4,5] reproduced in Figure 7. As demonstrated in Sect. "Parameters in experimental nano-FETs" one obtains from Equation 21 a characteristic length of λ ~ 1 nm under reasonable assumptions. For the experimental 10 nm gate length, we thus obtain l = L/λ = 10. Furthermore, Equation 20 yields the value of εF = 0.35 eV. The conversion of the experimental drain voltage V into the theoretical parameter vD is given by(22)

Bottom Line: In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport.In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail.Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well.

View Article: PubMed Central - HTML - PubMed

Affiliation: BTU Cottbus, Fakultät 1, Postfach 101344, 03013 Cottbus, Germany. fa-wulf@web.de.

ABSTRACT
Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport. In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail. Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well. In qualitative agreement with the experiments the ID - VG-traces for small drain voltages show thermally activated transport below the threshold gate voltage. In contrast, at large drain voltages the gate-voltage dependence is weaker. As can be expected in our relatively simple model, the theoretical drain current is larger than the experimental one by a little less than a decade.

No MeSH data available.


Related in: MedlinePlus