Limits...
Scaling properties of ballistic nano-transistors.

Wulf U, Krahlisch M, Richter H - Nanoscale Res Lett (2011)

Bottom Line: In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport.In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail.Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well.

View Article: PubMed Central - HTML - PubMed

Affiliation: BTU Cottbus, Fakult├Ąt 1, Postfach 101344, 03013 Cottbus, Germany. fa-wulf@web.de.

ABSTRACT
Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport. In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail. Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well. In qualitative agreement with the experiments the ID - VG-traces for small drain voltages show thermally activated transport below the threshold gate voltage. In contrast, at large drain voltages the gate-voltage dependence is weaker. As can be expected in our relatively simple model, the theoretical drain current is larger than the experimental one by a little less than a decade.

No MeSH data available.


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Calculated threshold characteristics at u = 0.1 (a) for l = 60 and (b) l = 25, and (c) l = 3. The dashed straight lines in blue are guides to the eye exhibiting a slope corresponding to thermal activation.
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Figure 6: Calculated threshold characteristics at u = 0.1 (a) for l = 60 and (b) l = 25, and (c) l = 3. The dashed straight lines in blue are guides to the eye exhibiting a slope corresponding to thermal activation.

Mentions: The threshold characteristics at room temperature are plotted in Figure 6 for a "small" drain voltage (vD = 0.1) and a "large" drain voltage (vD = 2.0). For the largest considered characteristic length l = 60 it is seen that below zero gate voltage the drain current is thermally activated for both considered drain voltages. A comparison with the results for l = 25 and l = 10 yields that for the small drain voltage the ID - VG trace is only weakly effected by the change in the barrier strength. In contrast, at the high drain voltage the drain current below vG = 0 grows strongly with decreasing barrier strength. The drain current does not reach the thermal activation regime any more, it falls of much smoother with increasing negative vG. As can be gathered from Figure 8 this effect is seen in experiments as well. We attribute it to the weakening of the tunneling barrier with increasing vD. To confirm this point the threshold characteristics for a still weaker barrier strength (l = 3) is considered. No thermal activation is found in this case even for the small drain voltage.


Scaling properties of ballistic nano-transistors.

Wulf U, Krahlisch M, Richter H - Nanoscale Res Lett (2011)

Calculated threshold characteristics at u = 0.1 (a) for l = 60 and (b) l = 25, and (c) l = 3. The dashed straight lines in blue are guides to the eye exhibiting a slope corresponding to thermal activation.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211455&req=5

Figure 6: Calculated threshold characteristics at u = 0.1 (a) for l = 60 and (b) l = 25, and (c) l = 3. The dashed straight lines in blue are guides to the eye exhibiting a slope corresponding to thermal activation.
Mentions: The threshold characteristics at room temperature are plotted in Figure 6 for a "small" drain voltage (vD = 0.1) and a "large" drain voltage (vD = 2.0). For the largest considered characteristic length l = 60 it is seen that below zero gate voltage the drain current is thermally activated for both considered drain voltages. A comparison with the results for l = 25 and l = 10 yields that for the small drain voltage the ID - VG trace is only weakly effected by the change in the barrier strength. In contrast, at the high drain voltage the drain current below vG = 0 grows strongly with decreasing barrier strength. The drain current does not reach the thermal activation regime any more, it falls of much smoother with increasing negative vG. As can be gathered from Figure 8 this effect is seen in experiments as well. We attribute it to the weakening of the tunneling barrier with increasing vD. To confirm this point the threshold characteristics for a still weaker barrier strength (l = 3) is considered. No thermal activation is found in this case even for the small drain voltage.

Bottom Line: In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport.In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail.Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well.

View Article: PubMed Central - HTML - PubMed

Affiliation: BTU Cottbus, Fakult├Ąt 1, Postfach 101344, 03013 Cottbus, Germany. fa-wulf@web.de.

ABSTRACT
Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport. In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail. Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well. In qualitative agreement with the experiments the ID - VG-traces for small drain voltages show thermally activated transport below the threshold gate voltage. In contrast, at large drain voltages the gate-voltage dependence is weaker. As can be expected in our relatively simple model, the theoretical drain current is larger than the experimental one by a little less than a decade.

No MeSH data available.


Related in: MedlinePlus