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Scaling properties of ballistic nano-transistors.

Wulf U, Krahlisch M, Richter H - Nanoscale Res Lett (2011)

Bottom Line: In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport.In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail.Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well.

View Article: PubMed Central - HTML - PubMed

Affiliation: BTU Cottbus, Fakultät 1, Postfach 101344, 03013 Cottbus, Germany. fa-wulf@web.de.

ABSTRACT
Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport. In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail. Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well. In qualitative agreement with the experiments the ID - VG-traces for small drain voltages show thermally activated transport below the threshold gate voltage. In contrast, at large drain voltages the gate-voltage dependence is weaker. As can be expected in our relatively simple model, the theoretical drain current is larger than the experimental one by a little less than a decade.

No MeSH data available.


Related in: MedlinePlus

Calculated drain characteristics for l = 10, vG starting from 0.5 with decrements of 0.1 (solid lines) at the temperature (a) u = 0.1 and (b) u = 0.01. In green dashed lines the LTT. For u = 0.1 the LTT occurs at a gate voltage of  = -0.05 and for u = 0.01 at  = 0.05. (c) , and (d) σth versus characteristic length for u = 0.01 (black), u = 0.1 (red), and u = 0.2 (green).
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Figure 5: Calculated drain characteristics for l = 10, vG starting from 0.5 with decrements of 0.1 (solid lines) at the temperature (a) u = 0.1 and (b) u = 0.01. In green dashed lines the LTT. For u = 0.1 the LTT occurs at a gate voltage of = -0.05 and for u = 0.01 at = 0.05. (c) , and (d) σth versus characteristic length for u = 0.01 (black), u = 0.1 (red), and u = 0.2 (green).

Mentions: Typical drain characteristics are plotted in Figure 5 for a low temperature (u = 0.01) and at room temperature (u = 0.1). It is seen that for both the temperatures a LTT can be identified. We define the LTT as the j - vD trace which can be best fitted with a linear regression j = σthvD in the given interval 0 ≤ vD ≤ 2. The best fit is determined by the minimum relative mean square deviation. The gate voltage associated with the LTT is denoted with . It turns out that at room temperature lies slightly above zero and at low temperatures slightly below (see Figure 5c). In general, the temperature dependence of the drain current is small. The most significant temperature effect is the enhancement of the resonant Fowler-Nordheim oscillations found at negative vG at low temperatures. From Figure 5d, it can be taken that the slope of the LTT σth decreases with increasing l and increasing temperature. For "hot" transistors (u = 0.2) a LTT can only be defined up to l ~ 10.


Scaling properties of ballistic nano-transistors.

Wulf U, Krahlisch M, Richter H - Nanoscale Res Lett (2011)

Calculated drain characteristics for l = 10, vG starting from 0.5 with decrements of 0.1 (solid lines) at the temperature (a) u = 0.1 and (b) u = 0.01. In green dashed lines the LTT. For u = 0.1 the LTT occurs at a gate voltage of  = -0.05 and for u = 0.01 at  = 0.05. (c) , and (d) σth versus characteristic length for u = 0.01 (black), u = 0.1 (red), and u = 0.2 (green).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211455&req=5

Figure 5: Calculated drain characteristics for l = 10, vG starting from 0.5 with decrements of 0.1 (solid lines) at the temperature (a) u = 0.1 and (b) u = 0.01. In green dashed lines the LTT. For u = 0.1 the LTT occurs at a gate voltage of = -0.05 and for u = 0.01 at = 0.05. (c) , and (d) σth versus characteristic length for u = 0.01 (black), u = 0.1 (red), and u = 0.2 (green).
Mentions: Typical drain characteristics are plotted in Figure 5 for a low temperature (u = 0.01) and at room temperature (u = 0.1). It is seen that for both the temperatures a LTT can be identified. We define the LTT as the j - vD trace which can be best fitted with a linear regression j = σthvD in the given interval 0 ≤ vD ≤ 2. The best fit is determined by the minimum relative mean square deviation. The gate voltage associated with the LTT is denoted with . It turns out that at room temperature lies slightly above zero and at low temperatures slightly below (see Figure 5c). In general, the temperature dependence of the drain current is small. The most significant temperature effect is the enhancement of the resonant Fowler-Nordheim oscillations found at negative vG at low temperatures. From Figure 5d, it can be taken that the slope of the LTT σth decreases with increasing l and increasing temperature. For "hot" transistors (u = 0.2) a LTT can only be defined up to l ~ 10.

Bottom Line: In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport.In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail.Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well.

View Article: PubMed Central - HTML - PubMed

Affiliation: BTU Cottbus, Fakultät 1, Postfach 101344, 03013 Cottbus, Germany. fa-wulf@web.de.

ABSTRACT
Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport. In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail. Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well. In qualitative agreement with the experiments the ID - VG-traces for small drain voltages show thermally activated transport below the threshold gate voltage. In contrast, at large drain voltages the gate-voltage dependence is weaker. As can be expected in our relatively simple model, the theoretical drain current is larger than the experimental one by a little less than a decade.

No MeSH data available.


Related in: MedlinePlus