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Scaling properties of ballistic nano-transistors.

Wulf U, Krahlisch M, Richter H - Nanoscale Res Lett (2011)

Bottom Line: In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport.In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail.Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well.

View Article: PubMed Central - HTML - PubMed

Affiliation: BTU Cottbus, Fakultät 1, Postfach 101344, 03013 Cottbus, Germany. fa-wulf@web.de.

ABSTRACT
Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport. In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail. Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well. In qualitative agreement with the experiments the ID - VG-traces for small drain voltages show thermally activated transport below the threshold gate voltage. In contrast, at large drain voltages the gate-voltage dependence is weaker. As can be expected in our relatively simple model, the theoretical drain current is larger than the experimental one by a little less than a decade.

No MeSH data available.


Related in: MedlinePlus

Scaled effective model. (a) Scaled effective potential. (b) Effective current transmission at u = 0.1, vD = 0.5, and vG = 0 ( = 0.504 and m = 0.992). The considered characteristic lengths are l = 4 (red, weak barrier, β = 15.87) and l = 25 (green, strong barrier, β = 619.8). The ideal limit (Equation 19) in blue line.
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Figure 4: Scaled effective model. (a) Scaled effective potential. (b) Effective current transmission at u = 0.1, vD = 0.5, and vG = 0 ( = 0.504 and m = 0.992). The considered characteristic lengths are l = 4 (red, weak barrier, β = 15.87) and l = 25 (green, strong barrier, β = 619.8). The ideal limit (Equation 19) in blue line.

Mentions: where Ek = 1 is the bottom of the lowest two-dimensional subband resulting in the z-confinement potential of the electron channel at zero drain voltage (see Figure 4b of Ref. [13]). The parameter W is the width of the transistor. Finally, VD = eUD is the drain potential at drain voltage UD which is assumed to fall off linearly.


Scaling properties of ballistic nano-transistors.

Wulf U, Krahlisch M, Richter H - Nanoscale Res Lett (2011)

Scaled effective model. (a) Scaled effective potential. (b) Effective current transmission at u = 0.1, vD = 0.5, and vG = 0 ( = 0.504 and m = 0.992). The considered characteristic lengths are l = 4 (red, weak barrier, β = 15.87) and l = 25 (green, strong barrier, β = 619.8). The ideal limit (Equation 19) in blue line.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211455&req=5

Figure 4: Scaled effective model. (a) Scaled effective potential. (b) Effective current transmission at u = 0.1, vD = 0.5, and vG = 0 ( = 0.504 and m = 0.992). The considered characteristic lengths are l = 4 (red, weak barrier, β = 15.87) and l = 25 (green, strong barrier, β = 619.8). The ideal limit (Equation 19) in blue line.
Mentions: where Ek = 1 is the bottom of the lowest two-dimensional subband resulting in the z-confinement potential of the electron channel at zero drain voltage (see Figure 4b of Ref. [13]). The parameter W is the width of the transistor. Finally, VD = eUD is the drain potential at drain voltage UD which is assumed to fall off linearly.

Bottom Line: In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport.In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail.Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well.

View Article: PubMed Central - HTML - PubMed

Affiliation: BTU Cottbus, Fakultät 1, Postfach 101344, 03013 Cottbus, Germany. fa-wulf@web.de.

ABSTRACT
Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport. In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail. Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well. In qualitative agreement with the experiments the ID - VG-traces for small drain voltages show thermally activated transport below the threshold gate voltage. In contrast, at large drain voltages the gate-voltage dependence is weaker. As can be expected in our relatively simple model, the theoretical drain current is larger than the experimental one by a little less than a decade.

No MeSH data available.


Related in: MedlinePlus