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Scaling properties of ballistic nano-transistors.

Wulf U, Krahlisch M, Richter H - Nanoscale Res Lett (2011)

Bottom Line: In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport.In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail.Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well.

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Affiliation: BTU Cottbus, Fakultät 1, Postfach 101344, 03013 Cottbus, Germany. fa-wulf@web.de.

ABSTRACT
Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport. In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail. Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well. In qualitative agreement with the experiments the ID - VG-traces for small drain voltages show thermally activated transport below the threshold gate voltage. In contrast, at large drain voltages the gate-voltage dependence is weaker. As can be expected in our relatively simple model, the theoretical drain current is larger than the experimental one by a little less than a decade.

No MeSH data available.


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Generic n-channel nano-field effect transistor. (a) Schematic representation. (b) One-dimensional effective potential Veff.
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Figure 1: Generic n-channel nano-field effect transistor. (a) Schematic representation. (b) One-dimensional effective potential Veff.

Mentions: (see Figure 1b). The energy zero in Equation 1 coincides with the position of the conduction band minimum in the highly n-doped source contact. As shown in [14](2)


Scaling properties of ballistic nano-transistors.

Wulf U, Krahlisch M, Richter H - Nanoscale Res Lett (2011)

Generic n-channel nano-field effect transistor. (a) Schematic representation. (b) One-dimensional effective potential Veff.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211455&req=5

Figure 1: Generic n-channel nano-field effect transistor. (a) Schematic representation. (b) One-dimensional effective potential Veff.
Mentions: (see Figure 1b). The energy zero in Equation 1 coincides with the position of the conduction band minimum in the highly n-doped source contact. As shown in [14](2)

Bottom Line: In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport.In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail.Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well.

View Article: PubMed Central - HTML - PubMed

Affiliation: BTU Cottbus, Fakultät 1, Postfach 101344, 03013 Cottbus, Germany. fa-wulf@web.de.

ABSTRACT
Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport. In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail. Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well. In qualitative agreement with the experiments the ID - VG-traces for small drain voltages show thermally activated transport below the threshold gate voltage. In contrast, at large drain voltages the gate-voltage dependence is weaker. As can be expected in our relatively simple model, the theoretical drain current is larger than the experimental one by a little less than a decade.

No MeSH data available.


Related in: MedlinePlus