Quantum-squeezing effects of strained multilayer graphene NEMS.
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Quantum squeezing can improve the ultimate measurement precision by squeezing one desired fluctuation of the two physical quantities in Heisenberg relation.We propose a scheme to obtain squeezed states through graphene nanoelectromechanical system (NEMS) taking advantage of their thin thickness in principle.Our research promotes the measured precision limit of graphene-based nano-transducers by reducing quantum noises through squeezed states.
Affiliation: Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China. yangxu-isee@zju.edu.cn.
ABSTRACT
Quantum squeezing can improve the ultimate measurement precision by squeezing one desired fluctuation of the two physical quantities in Heisenberg relation. We propose a scheme to obtain squeezed states through graphene nanoelectromechanical system (NEMS) taking advantage of their thin thickness in principle. Two key criteria of achieving squeezing states, zero-point displacement uncertainty and squeezing factor of strained multilayer graphene NEMS, are studied. Our research promotes the measured precision limit of graphene-based nano-transducers by reducing quantum noises through squeezed states. No MeSH data available. Related in: MedlinePlus |
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Mentions: where ε is the strain applied on the graphene film. In order to achieve quantum squeezing, R must be less than 1. According to Equation 4, R values of monolayer and bilayer graphene films with various dimensions, strain ε, and applied voltages at T = 300 K and T = 5 K have been shown in Figure 3. Quantum squeezing is achievable in the region log R < 0 at T = 5 K. As shown in Figure 3, the applied strain increases the R values because of the increased fundamental angular frequency and the decreased Δxzp caused by strain, which makes squeezing conditions more difficult to reach. Figure 4a has shown that ΔX1 changes with applied voltages at T = 5 K, the red line represents the uncertainties of X1 and the dashed reference line is ΔX = Δxzp. As shown in Figure 4a, applying a voltage larger than 100 mV, we can obtain ΔX1 < Δxzp, which means that the displacement uncertainty is squeezed, and the quantum squeezing is achieved. Some typical R values of monolayer graphene film, obtained by varying the applied voltage V, such as strain ε, have been listed in Table 2 (with T = 300 K and Q = 125) and Table 3 (with T = 5 K and Q = 14000). As shown in Tables 2 and 3 and Figure 3, lowering the temperature to 5 K can dramatically decrease the R values. The lower the temperature, the larger the quality factor Q, which makes the squeezing effects stronger. |
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Affiliation: Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China. yangxu-isee@zju.edu.cn.
No MeSH data available.