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Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography.

Liu G, Zhao H, Zhang J, Park JH, Mawst LJ, Tansu N - Nanoscale Res Lett (2011)

Bottom Line: The cylindrical-shaped nanopatterns were created on SiNx layers deposited on a GaN template, which provided the nanopatterning for the epitaxy of ultra-high density QD with uniform size and distribution.The InGaN/GaN QDs with density up to 8 × 1010 cm-2 are realized, which represents ultra-high dot density for highly uniform and well-controlled, nitride-based QDs, with QD diameter of approximately 22-25 nm.The photoluminescence (PL) studies indicated the importance of NH3 annealing and GaN spacer layer growth for improving the PL intensity of the SiNx-treated GaN surface, to achieve high optical-quality QDs applicable for photonics devices.

View Article: PubMed Central - HTML - PubMed

Affiliation: Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA. gul308@lehigh.edu.

ABSTRACT
Highly uniform InGaN-based quantum dots (QDs) grown on a nanopatterned dielectric layer defined by self-assembled diblock copolymer were performed by metal-organic chemical vapor deposition. The cylindrical-shaped nanopatterns were created on SiNx layers deposited on a GaN template, which provided the nanopatterning for the epitaxy of ultra-high density QD with uniform size and distribution. Scanning electron microscopy and atomic force microscopy measurements were conducted to investigate the QDs morphology. The InGaN/GaN QDs with density up to 8 × 1010 cm-2 are realized, which represents ultra-high dot density for highly uniform and well-controlled, nitride-based QDs, with QD diameter of approximately 22-25 nm. The photoluminescence (PL) studies indicated the importance of NH3 annealing and GaN spacer layer growth for improving the PL intensity of the SiNx-treated GaN surface, to achieve high optical-quality QDs applicable for photonics devices.

No MeSH data available.


AFM image of SAE-grown InGaN/GaN QDs on samples B measured by Dimension 3000 after removal of SiNx on 1 μm × 1 μm area.
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Figure 8: AFM image of SAE-grown InGaN/GaN QDs on samples B measured by Dimension 3000 after removal of SiNx on 1 μm × 1 μm area.

Mentions: The AFM image of the InGaN QDs grown on sample B is also shown in Figure 8 with a scale of 1 μm × 1 μm (Dimension 3000). The density of dots on sample B is measured as 8 × 1010 cm-2 with the dot diameter of 25 nm and average height of 4.1 nm. Note that the larger heights in the AFM measurements of the QDs measured in sample B is in agreement with the thicker growths for sample B.


Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography.

Liu G, Zhao H, Zhang J, Park JH, Mawst LJ, Tansu N - Nanoscale Res Lett (2011)

AFM image of SAE-grown InGaN/GaN QDs on samples B measured by Dimension 3000 after removal of SiNx on 1 μm × 1 μm area.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211431&req=5

Figure 8: AFM image of SAE-grown InGaN/GaN QDs on samples B measured by Dimension 3000 after removal of SiNx on 1 μm × 1 μm area.
Mentions: The AFM image of the InGaN QDs grown on sample B is also shown in Figure 8 with a scale of 1 μm × 1 μm (Dimension 3000). The density of dots on sample B is measured as 8 × 1010 cm-2 with the dot diameter of 25 nm and average height of 4.1 nm. Note that the larger heights in the AFM measurements of the QDs measured in sample B is in agreement with the thicker growths for sample B.

Bottom Line: The cylindrical-shaped nanopatterns were created on SiNx layers deposited on a GaN template, which provided the nanopatterning for the epitaxy of ultra-high density QD with uniform size and distribution.The InGaN/GaN QDs with density up to 8 × 1010 cm-2 are realized, which represents ultra-high dot density for highly uniform and well-controlled, nitride-based QDs, with QD diameter of approximately 22-25 nm.The photoluminescence (PL) studies indicated the importance of NH3 annealing and GaN spacer layer growth for improving the PL intensity of the SiNx-treated GaN surface, to achieve high optical-quality QDs applicable for photonics devices.

View Article: PubMed Central - HTML - PubMed

Affiliation: Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA. gul308@lehigh.edu.

ABSTRACT
Highly uniform InGaN-based quantum dots (QDs) grown on a nanopatterned dielectric layer defined by self-assembled diblock copolymer were performed by metal-organic chemical vapor deposition. The cylindrical-shaped nanopatterns were created on SiNx layers deposited on a GaN template, which provided the nanopatterning for the epitaxy of ultra-high density QD with uniform size and distribution. Scanning electron microscopy and atomic force microscopy measurements were conducted to investigate the QDs morphology. The InGaN/GaN QDs with density up to 8 × 1010 cm-2 are realized, which represents ultra-high dot density for highly uniform and well-controlled, nitride-based QDs, with QD diameter of approximately 22-25 nm. The photoluminescence (PL) studies indicated the importance of NH3 annealing and GaN spacer layer growth for improving the PL intensity of the SiNx-treated GaN surface, to achieve high optical-quality QDs applicable for photonics devices.

No MeSH data available.