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Low-temperature fabrication of layered self-organized Ge clusters by RF-sputtering.

Pinto SR, Rolo AG, Buljan M, Chahboun A, Bernstorff S, Barradas NP, Alves E, Kashtiban RJ, Bangert U, Gomes MJ - Nanoscale Res Lett (2011)

Bottom Line: In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures.The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution.The crystallization of the clusters was achieved at annealing temperature of 700°C.

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Affiliation: Physics Department, University of Minho, 4710-057 Braga, Portugal. sarapinto@fisica.uminho.pt.

ABSTRACT
In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250°C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700°C.

No MeSH data available.


Related in: MedlinePlus

XPS spectra. XPS Ge 2p (a) and Si 2p (b) for the as-grown multilayer.
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Figure 6: XPS spectra. XPS Ge 2p (a) and Si 2p (b) for the as-grown multilayer.

Mentions: In our attempt to clarify the chemical composition of the nanoparticles, we have performed XPS analyses of the as-grown multilayer. Peaks relative to Ge 2p and Si 2p are shown in Figure 6a,b, respectively. The signal due to Ge exhibits a double peak features because of pure Ge and GeOx states. From the XPS data only Ge, GeO, and SiOx were detected. No Si-Ge formation was observed in agreement with the Raman results.


Low-temperature fabrication of layered self-organized Ge clusters by RF-sputtering.

Pinto SR, Rolo AG, Buljan M, Chahboun A, Bernstorff S, Barradas NP, Alves E, Kashtiban RJ, Bangert U, Gomes MJ - Nanoscale Res Lett (2011)

XPS spectra. XPS Ge 2p (a) and Si 2p (b) for the as-grown multilayer.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211430&req=5

Figure 6: XPS spectra. XPS Ge 2p (a) and Si 2p (b) for the as-grown multilayer.
Mentions: In our attempt to clarify the chemical composition of the nanoparticles, we have performed XPS analyses of the as-grown multilayer. Peaks relative to Ge 2p and Si 2p are shown in Figure 6a,b, respectively. The signal due to Ge exhibits a double peak features because of pure Ge and GeOx states. From the XPS data only Ge, GeO, and SiOx were detected. No Si-Ge formation was observed in agreement with the Raman results.

Bottom Line: In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures.The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution.The crystallization of the clusters was achieved at annealing temperature of 700°C.

View Article: PubMed Central - HTML - PubMed

Affiliation: Physics Department, University of Minho, 4710-057 Braga, Portugal. sarapinto@fisica.uminho.pt.

ABSTRACT
In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250°C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700°C.

No MeSH data available.


Related in: MedlinePlus