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Low-temperature fabrication of layered self-organized Ge clusters by RF-sputtering.

Pinto SR, Rolo AG, Buljan M, Chahboun A, Bernstorff S, Barradas NP, Alves E, Kashtiban RJ, Bangert U, Gomes MJ - Nanoscale Res Lett (2011)

Bottom Line: In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures.The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution.The crystallization of the clusters was achieved at annealing temperature of 700°C.

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Affiliation: Physics Department, University of Minho, 4710-057 Braga, Portugal. sarapinto@fisica.uminho.pt.

ABSTRACT
In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250°C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700°C.

No MeSH data available.


Related in: MedlinePlus

Depth profiles of different elements (Si, O, and Ge) obtained from fits of measured RBS, for the as-grown and annealed films.
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Figure 1: Depth profiles of different elements (Si, O, and Ge) obtained from fits of measured RBS, for the as-grown and annealed films.

Mentions: RBS technique was applied to examine the layer structure of the as-grown multilayers. Figure 1 shows the depth profiles of the as grown and annealed films obtained from the fits [15] of the measured RBS intensity distributions. The results show a well-organized layer structure of the as-grown film (Figure 1a), with the layer thickness as expected from the growth conditions. After annealing at 700°C (Figure 1b), the samples still retain a layered structure, but for temperatures of 800°C or higher, a clear diffusion of Ge and a destruction of the multilayers structure are observed (Figure 1c,d). At 1000°C, only a small amount of Ge remains at the interface.


Low-temperature fabrication of layered self-organized Ge clusters by RF-sputtering.

Pinto SR, Rolo AG, Buljan M, Chahboun A, Bernstorff S, Barradas NP, Alves E, Kashtiban RJ, Bangert U, Gomes MJ - Nanoscale Res Lett (2011)

Depth profiles of different elements (Si, O, and Ge) obtained from fits of measured RBS, for the as-grown and annealed films.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211430&req=5

Figure 1: Depth profiles of different elements (Si, O, and Ge) obtained from fits of measured RBS, for the as-grown and annealed films.
Mentions: RBS technique was applied to examine the layer structure of the as-grown multilayers. Figure 1 shows the depth profiles of the as grown and annealed films obtained from the fits [15] of the measured RBS intensity distributions. The results show a well-organized layer structure of the as-grown film (Figure 1a), with the layer thickness as expected from the growth conditions. After annealing at 700°C (Figure 1b), the samples still retain a layered structure, but for temperatures of 800°C or higher, a clear diffusion of Ge and a destruction of the multilayers structure are observed (Figure 1c,d). At 1000°C, only a small amount of Ge remains at the interface.

Bottom Line: In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures.The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution.The crystallization of the clusters was achieved at annealing temperature of 700°C.

View Article: PubMed Central - HTML - PubMed

Affiliation: Physics Department, University of Minho, 4710-057 Braga, Portugal. sarapinto@fisica.uminho.pt.

ABSTRACT
In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250°C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700°C.

No MeSH data available.


Related in: MedlinePlus