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Facile solution growth of vertically aligned ZnO nanorods sensitized with aqueous CdS and CdSe quantum dots for photovoltaic applications.

Luan C, Vaneski A, Susha AS, Xu X, Wang HE, Chen X, Xu J, Zhang W, Lee CS, Rogach AL, Zapien JA - Nanoscale Res Lett (2011)

Bottom Line: Vertically aligned single crystalline ZnO nanorod arrays, approximately 3 μm in length and 50-450 nm in diameter are grown by a simple solution approach on a Zn foil substrate.A thin Al2O3 layer deposited prior to quantum dot anchoring successfully acts as a barrier inhibiting electron recombination at the Zn/ZnO/electrolyte interface, resulting in power conversion efficiency of approximately 1% with an improved fill factor of 0.55.The in situ growth of ZnO nanorod arrays in a solution containing CdSe quantum dots provides better contact between two materials resulting in enhanced open circuit voltage.

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Affiliation: Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR. andrey.rogach@cityu.edu.hk.

ABSTRACT
Vertically aligned single crystalline ZnO nanorod arrays, approximately 3 μm in length and 50-450 nm in diameter are grown by a simple solution approach on a Zn foil substrate. CdS and CdSe colloidal quantum dots are assembled onto ZnO nanorods array using water-soluble nanocrystals capped as-synthesized with a short-chain bifuncional linker thioglycolic acid. The solar cells co-sensitized with both CdS and CdSe quantum dots demonstrate superior efficiency compared with the cells using only one type of quantum dots. A thin Al2O3 layer deposited prior to quantum dot anchoring successfully acts as a barrier inhibiting electron recombination at the Zn/ZnO/electrolyte interface, resulting in power conversion efficiency of approximately 1% with an improved fill factor of 0.55. The in situ growth of ZnO nanorod arrays in a solution containing CdSe quantum dots provides better contact between two materials resulting in enhanced open circuit voltage.

No MeSH data available.


Structural characterization of ZnO NRAs grown in-situ in CdSe QD solution. (a) SEM image (inset: higher magnification SEM of several nanorods detached from the Zn substrate); (b) TEM image of a ZnO nanorod from sample in (a); (c, d) HRTEM images of a ZnO nanorod surface with incorporated CdSe QDs.
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Figure 3: Structural characterization of ZnO NRAs grown in-situ in CdSe QD solution. (a) SEM image (inset: higher magnification SEM of several nanorods detached from the Zn substrate); (b) TEM image of a ZnO nanorod from sample in (a); (c, d) HRTEM images of a ZnO nanorod surface with incorporated CdSe QDs.

Mentions: We have also grown ZnO NRAs in situ in a water bath containing CdSe QDs. The SEM image in Figure 3a shows that uniform NRAs with orientation which is even closer to the substrate's normal as compared to the pristine ZnO NRAs in Figure 1b. A higher magnification SEM of several NRs detached from the substrate, inset in Figure 3a, shows that the CdSe QDs are incorporated into the ZnO surface resulting in a larger surface roughness. The surface coverage of ZnO with QDs is also confirmed by TEM as shown in Figure 3b. As expected, the incorporation of QDs during ZnO NR growth results in more intimate contact between the ZnO NRs' surface and the QDs as observed in the HRTEM images of Figure 3c,d.


Facile solution growth of vertically aligned ZnO nanorods sensitized with aqueous CdS and CdSe quantum dots for photovoltaic applications.

Luan C, Vaneski A, Susha AS, Xu X, Wang HE, Chen X, Xu J, Zhang W, Lee CS, Rogach AL, Zapien JA - Nanoscale Res Lett (2011)

Structural characterization of ZnO NRAs grown in-situ in CdSe QD solution. (a) SEM image (inset: higher magnification SEM of several nanorods detached from the Zn substrate); (b) TEM image of a ZnO nanorod from sample in (a); (c, d) HRTEM images of a ZnO nanorod surface with incorporated CdSe QDs.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211429&req=5

Figure 3: Structural characterization of ZnO NRAs grown in-situ in CdSe QD solution. (a) SEM image (inset: higher magnification SEM of several nanorods detached from the Zn substrate); (b) TEM image of a ZnO nanorod from sample in (a); (c, d) HRTEM images of a ZnO nanorod surface with incorporated CdSe QDs.
Mentions: We have also grown ZnO NRAs in situ in a water bath containing CdSe QDs. The SEM image in Figure 3a shows that uniform NRAs with orientation which is even closer to the substrate's normal as compared to the pristine ZnO NRAs in Figure 1b. A higher magnification SEM of several NRs detached from the substrate, inset in Figure 3a, shows that the CdSe QDs are incorporated into the ZnO surface resulting in a larger surface roughness. The surface coverage of ZnO with QDs is also confirmed by TEM as shown in Figure 3b. As expected, the incorporation of QDs during ZnO NR growth results in more intimate contact between the ZnO NRs' surface and the QDs as observed in the HRTEM images of Figure 3c,d.

Bottom Line: Vertically aligned single crystalline ZnO nanorod arrays, approximately 3 μm in length and 50-450 nm in diameter are grown by a simple solution approach on a Zn foil substrate.A thin Al2O3 layer deposited prior to quantum dot anchoring successfully acts as a barrier inhibiting electron recombination at the Zn/ZnO/electrolyte interface, resulting in power conversion efficiency of approximately 1% with an improved fill factor of 0.55.The in situ growth of ZnO nanorod arrays in a solution containing CdSe quantum dots provides better contact between two materials resulting in enhanced open circuit voltage.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR. andrey.rogach@cityu.edu.hk.

ABSTRACT
Vertically aligned single crystalline ZnO nanorod arrays, approximately 3 μm in length and 50-450 nm in diameter are grown by a simple solution approach on a Zn foil substrate. CdS and CdSe colloidal quantum dots are assembled onto ZnO nanorods array using water-soluble nanocrystals capped as-synthesized with a short-chain bifuncional linker thioglycolic acid. The solar cells co-sensitized with both CdS and CdSe quantum dots demonstrate superior efficiency compared with the cells using only one type of quantum dots. A thin Al2O3 layer deposited prior to quantum dot anchoring successfully acts as a barrier inhibiting electron recombination at the Zn/ZnO/electrolyte interface, resulting in power conversion efficiency of approximately 1% with an improved fill factor of 0.55. The in situ growth of ZnO nanorod arrays in a solution containing CdSe quantum dots provides better contact between two materials resulting in enhanced open circuit voltage.

No MeSH data available.