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Facile solution growth of vertically aligned ZnO nanorods sensitized with aqueous CdS and CdSe quantum dots for photovoltaic applications.

Luan C, Vaneski A, Susha AS, Xu X, Wang HE, Chen X, Xu J, Zhang W, Lee CS, Rogach AL, Zapien JA - Nanoscale Res Lett (2011)

Bottom Line: Vertically aligned single crystalline ZnO nanorod arrays, approximately 3 μm in length and 50-450 nm in diameter are grown by a simple solution approach on a Zn foil substrate.A thin Al2O3 layer deposited prior to quantum dot anchoring successfully acts as a barrier inhibiting electron recombination at the Zn/ZnO/electrolyte interface, resulting in power conversion efficiency of approximately 1% with an improved fill factor of 0.55.The in situ growth of ZnO nanorod arrays in a solution containing CdSe quantum dots provides better contact between two materials resulting in enhanced open circuit voltage.

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Affiliation: Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR. andrey.rogach@cityu.edu.hk.

ABSTRACT
Vertically aligned single crystalline ZnO nanorod arrays, approximately 3 μm in length and 50-450 nm in diameter are grown by a simple solution approach on a Zn foil substrate. CdS and CdSe colloidal quantum dots are assembled onto ZnO nanorods array using water-soluble nanocrystals capped as-synthesized with a short-chain bifuncional linker thioglycolic acid. The solar cells co-sensitized with both CdS and CdSe quantum dots demonstrate superior efficiency compared with the cells using only one type of quantum dots. A thin Al2O3 layer deposited prior to quantum dot anchoring successfully acts as a barrier inhibiting electron recombination at the Zn/ZnO/electrolyte interface, resulting in power conversion efficiency of approximately 1% with an improved fill factor of 0.55. The in situ growth of ZnO nanorod arrays in a solution containing CdSe quantum dots provides better contact between two materials resulting in enhanced open circuit voltage.

No MeSH data available.


Structural characterization of QD-decorated ZnO NRAs. (a) Top-view SEM image of ZnO nanorods decorated with CdSe QDs; (b) TEM of a ZnO nanorod coated with CdSe QDs; (c) HRTEM image of CdSe QDs on a ZnO nanorod, indicated by white circles.
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Figure 2: Structural characterization of QD-decorated ZnO NRAs. (a) Top-view SEM image of ZnO nanorods decorated with CdSe QDs; (b) TEM of a ZnO nanorod coated with CdSe QDs; (c) HRTEM image of CdSe QDs on a ZnO nanorod, indicated by white circles.

Mentions: Decoration of the ZnO NRAs with QDs results in significant increase in their surface roughness as presented for the case of CdSe QDs in the SEM image of Figure 2a; furthermore, it is obvious that coverage of the ZnO NRAs has been achieved over large areas. Closer inspection, by TEM of a single ZnO NR in Figure 2b, demonstrates almost complete surface coverage by the CdSe QDs. Figure 2c shows a representative HRTEM image taken at the nanorod's edge and provides further evidence that single crystalline QDs with 2-2.5 nm diameter are directly and tightly attached to the ZnO surface.


Facile solution growth of vertically aligned ZnO nanorods sensitized with aqueous CdS and CdSe quantum dots for photovoltaic applications.

Luan C, Vaneski A, Susha AS, Xu X, Wang HE, Chen X, Xu J, Zhang W, Lee CS, Rogach AL, Zapien JA - Nanoscale Res Lett (2011)

Structural characterization of QD-decorated ZnO NRAs. (a) Top-view SEM image of ZnO nanorods decorated with CdSe QDs; (b) TEM of a ZnO nanorod coated with CdSe QDs; (c) HRTEM image of CdSe QDs on a ZnO nanorod, indicated by white circles.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211429&req=5

Figure 2: Structural characterization of QD-decorated ZnO NRAs. (a) Top-view SEM image of ZnO nanorods decorated with CdSe QDs; (b) TEM of a ZnO nanorod coated with CdSe QDs; (c) HRTEM image of CdSe QDs on a ZnO nanorod, indicated by white circles.
Mentions: Decoration of the ZnO NRAs with QDs results in significant increase in their surface roughness as presented for the case of CdSe QDs in the SEM image of Figure 2a; furthermore, it is obvious that coverage of the ZnO NRAs has been achieved over large areas. Closer inspection, by TEM of a single ZnO NR in Figure 2b, demonstrates almost complete surface coverage by the CdSe QDs. Figure 2c shows a representative HRTEM image taken at the nanorod's edge and provides further evidence that single crystalline QDs with 2-2.5 nm diameter are directly and tightly attached to the ZnO surface.

Bottom Line: Vertically aligned single crystalline ZnO nanorod arrays, approximately 3 μm in length and 50-450 nm in diameter are grown by a simple solution approach on a Zn foil substrate.A thin Al2O3 layer deposited prior to quantum dot anchoring successfully acts as a barrier inhibiting electron recombination at the Zn/ZnO/electrolyte interface, resulting in power conversion efficiency of approximately 1% with an improved fill factor of 0.55.The in situ growth of ZnO nanorod arrays in a solution containing CdSe quantum dots provides better contact between two materials resulting in enhanced open circuit voltage.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR. andrey.rogach@cityu.edu.hk.

ABSTRACT
Vertically aligned single crystalline ZnO nanorod arrays, approximately 3 μm in length and 50-450 nm in diameter are grown by a simple solution approach on a Zn foil substrate. CdS and CdSe colloidal quantum dots are assembled onto ZnO nanorods array using water-soluble nanocrystals capped as-synthesized with a short-chain bifuncional linker thioglycolic acid. The solar cells co-sensitized with both CdS and CdSe quantum dots demonstrate superior efficiency compared with the cells using only one type of quantum dots. A thin Al2O3 layer deposited prior to quantum dot anchoring successfully acts as a barrier inhibiting electron recombination at the Zn/ZnO/electrolyte interface, resulting in power conversion efficiency of approximately 1% with an improved fill factor of 0.55. The in situ growth of ZnO nanorod arrays in a solution containing CdSe quantum dots provides better contact between two materials resulting in enhanced open circuit voltage.

No MeSH data available.