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Organic electrochemical transistors based on a dielectrophoretically aligned nanowire array.

Choi W, An T, Lim G - Nanoscale Res Lett (2011)

Bottom Line: Dielectrophoretically aligned nanowires formed a one-dimensional submicron bundle between triangular electrodes.The drain-source current decreased with increasing gate voltage.The nanowire bundles showed potential as pH sensor because the drain-source current ratio varied linearly according to the gate voltage in pH buffers.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Mechanical Engineering, POSTECH, 790-784 Pohang, Republic of Korea. limmems@postech.ac.kr.

ABSTRACT
In this study, we synthesized an organic electrochemical transistor (OECT) using dielectrophoresis of a carbon nanotube-Nafion (CNT-Nafion) suspension. Dielectrophoretically aligned nanowires formed a one-dimensional submicron bundle between triangular electrodes. The CNT-Nafion composite nanowire bundles showed p-type semiconductor characteristics. The drain-source current decreased with increasing gate voltage. The nanowire bundles showed potential as pH sensor because the drain-source current ratio varied linearly according to the gate voltage in pH buffers.

No MeSH data available.


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Verification of CNT-Nafion nanowire electrochemical transistors. Characteristic curves of IDS versus VDS for (a) electrochemical transistors based on dielectrophoretically-aligned CNT-Nafion nanowire bundles and (b) blank electrodes in 1 × PBS buffer (pH 7.2). (c) Characteristic curves of IG versus VDS for the electrochemical transistors under the same conditions.
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Figure 4: Verification of CNT-Nafion nanowire electrochemical transistors. Characteristic curves of IDS versus VDS for (a) electrochemical transistors based on dielectrophoretically-aligned CNT-Nafion nanowire bundles and (b) blank electrodes in 1 × PBS buffer (pH 7.2). (c) Characteristic curves of IG versus VDS for the electrochemical transistors under the same conditions.

Mentions: Figure 4a, b shows the characteristic drain current (IDS) versus drain voltage (VDS) curves at different gate voltages (VG) in 5 μL of a phosphate-buffered saline (PBS) droplet for CNT-Nafion nanowires and blank electrodes, respectively. Figure 4c plots the gate current (IG) versus VDS for CNT-Nafion nanowires under the same conditions. The maximum value of IDS for the nanowire transistor was approximately 700 μA at VG = 0.5 V. The leakage current, IDS at the blank electrodes and IG were at the most 0.2 μA. The leakage current through the electrolyte was negligible because the IDS value at the blank electrode and IG were approximately one thousand times smaller than the current through the CNT-Nafion nanowires. The value of IDS decreased with increasing electrolyte gate bias (Figure 4a), indicating that the holes were the primary charge-carriers in the CNT-Nafion composite nanowires. That is, they exhibited p-type characteristics in the buffer solutions [12,23]


Organic electrochemical transistors based on a dielectrophoretically aligned nanowire array.

Choi W, An T, Lim G - Nanoscale Res Lett (2011)

Verification of CNT-Nafion nanowire electrochemical transistors. Characteristic curves of IDS versus VDS for (a) electrochemical transistors based on dielectrophoretically-aligned CNT-Nafion nanowire bundles and (b) blank electrodes in 1 × PBS buffer (pH 7.2). (c) Characteristic curves of IG versus VDS for the electrochemical transistors under the same conditions.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211427&req=5

Figure 4: Verification of CNT-Nafion nanowire electrochemical transistors. Characteristic curves of IDS versus VDS for (a) electrochemical transistors based on dielectrophoretically-aligned CNT-Nafion nanowire bundles and (b) blank electrodes in 1 × PBS buffer (pH 7.2). (c) Characteristic curves of IG versus VDS for the electrochemical transistors under the same conditions.
Mentions: Figure 4a, b shows the characteristic drain current (IDS) versus drain voltage (VDS) curves at different gate voltages (VG) in 5 μL of a phosphate-buffered saline (PBS) droplet for CNT-Nafion nanowires and blank electrodes, respectively. Figure 4c plots the gate current (IG) versus VDS for CNT-Nafion nanowires under the same conditions. The maximum value of IDS for the nanowire transistor was approximately 700 μA at VG = 0.5 V. The leakage current, IDS at the blank electrodes and IG were at the most 0.2 μA. The leakage current through the electrolyte was negligible because the IDS value at the blank electrode and IG were approximately one thousand times smaller than the current through the CNT-Nafion nanowires. The value of IDS decreased with increasing electrolyte gate bias (Figure 4a), indicating that the holes were the primary charge-carriers in the CNT-Nafion composite nanowires. That is, they exhibited p-type characteristics in the buffer solutions [12,23]

Bottom Line: Dielectrophoretically aligned nanowires formed a one-dimensional submicron bundle between triangular electrodes.The drain-source current decreased with increasing gate voltage.The nanowire bundles showed potential as pH sensor because the drain-source current ratio varied linearly according to the gate voltage in pH buffers.

View Article: PubMed Central - HTML - PubMed

Affiliation: Department of Mechanical Engineering, POSTECH, 790-784 Pohang, Republic of Korea. limmems@postech.ac.kr.

ABSTRACT
In this study, we synthesized an organic electrochemical transistor (OECT) using dielectrophoresis of a carbon nanotube-Nafion (CNT-Nafion) suspension. Dielectrophoretically aligned nanowires formed a one-dimensional submicron bundle between triangular electrodes. The CNT-Nafion composite nanowire bundles showed p-type semiconductor characteristics. The drain-source current decreased with increasing gate voltage. The nanowire bundles showed potential as pH sensor because the drain-source current ratio varied linearly according to the gate voltage in pH buffers.

No MeSH data available.


Related in: MedlinePlus