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Solvothermal synthesis and thermoelectric properties of indium telluride nanostring-cluster hierarchical structures.

Tai G, Miao C, Wang Y, Bai Y, Zhang H, Guo W - Nanoscale Res Lett (2011)

Bottom Line: A simple solvothermal approach has been developed to successfully synthesize n-type α-In2Te3 thermoelectric nanomaterials.A diffusion-limited reaction mechanism was proposed to explain the formation of the hierarchical structures.The synthetic route can be applied to obtain other low-dimensional semiconducting telluride nanostructures.PACS: 65.80.-g, 68.35.bg, 68.35.bt.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, Nanjing 210016, People's Republic of China. taiguoan@nuaa.edu.cn.

ABSTRACT
A simple solvothermal approach has been developed to successfully synthesize n-type α-In2Te3 thermoelectric nanomaterials. The nanostring-cluster hierarchical structures were prepared using In(NO3)3 and Na2TeO3 as the reactants in a mixed solvent of ethylenediamine and ethylene glycol at 200°C for 24 h. A diffusion-limited reaction mechanism was proposed to explain the formation of the hierarchical structures. The Seebeck coefficient of the bulk pellet pressed by the obtained samples exhibits 43% enhancement over that of the corresponding thin film at room temperature. The electrical conductivity of the bulk pellet is one to four orders of magnitude higher than that of the corresponding thin film or p-type bulk sample. The synthetic route can be applied to obtain other low-dimensional semiconducting telluride nanostructures.PACS: 65.80.-g, 68.35.bg, 68.35.bt.

No MeSH data available.


TEM image and EDX pattern of the as-synthesized In2Te3 hierarchical structures: (a) TEM image of the In2Te3 hierarchical structures prepared at 200°C for 24 h; (b) EDX pattern of the samples taken from the TEM image. The signals for Cu, Cr peaks are originated from the substrate.
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Figure 4: TEM image and EDX pattern of the as-synthesized In2Te3 hierarchical structures: (a) TEM image of the In2Te3 hierarchical structures prepared at 200°C for 24 h; (b) EDX pattern of the samples taken from the TEM image. The signals for Cu, Cr peaks are originated from the substrate.

Mentions: The detailed structure of the products was further characterized by TEM. Figure 4a exhibits the TEM image of a typical α-In2Te3 hierarchical structure. Reliable electron diffraction patterns and high-resolution TEM images are difficult to obtain because of the partial melting of the samples under electron-beam irradiation at 200 kV, which could be obviously seen in Figure 4a. However, XRD pattern (Figure 3a) and FE-SEM images (Figure 2) show that the obtained hierarchical structures are polycrystalline. EDX spectrum reveals an atomic ratio of In:Te = 42.81:57.19 (Figure 4b), close to the stoichiometric In2Te3 within experimental errors. The signals for Cu, Cr peak were originated from the substrate.


Solvothermal synthesis and thermoelectric properties of indium telluride nanostring-cluster hierarchical structures.

Tai G, Miao C, Wang Y, Bai Y, Zhang H, Guo W - Nanoscale Res Lett (2011)

TEM image and EDX pattern of the as-synthesized In2Te3 hierarchical structures: (a) TEM image of the In2Te3 hierarchical structures prepared at 200°C for 24 h; (b) EDX pattern of the samples taken from the TEM image. The signals for Cu, Cr peaks are originated from the substrate.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211416&req=5

Figure 4: TEM image and EDX pattern of the as-synthesized In2Te3 hierarchical structures: (a) TEM image of the In2Te3 hierarchical structures prepared at 200°C for 24 h; (b) EDX pattern of the samples taken from the TEM image. The signals for Cu, Cr peaks are originated from the substrate.
Mentions: The detailed structure of the products was further characterized by TEM. Figure 4a exhibits the TEM image of a typical α-In2Te3 hierarchical structure. Reliable electron diffraction patterns and high-resolution TEM images are difficult to obtain because of the partial melting of the samples under electron-beam irradiation at 200 kV, which could be obviously seen in Figure 4a. However, XRD pattern (Figure 3a) and FE-SEM images (Figure 2) show that the obtained hierarchical structures are polycrystalline. EDX spectrum reveals an atomic ratio of In:Te = 42.81:57.19 (Figure 4b), close to the stoichiometric In2Te3 within experimental errors. The signals for Cu, Cr peak were originated from the substrate.

Bottom Line: A simple solvothermal approach has been developed to successfully synthesize n-type α-In2Te3 thermoelectric nanomaterials.A diffusion-limited reaction mechanism was proposed to explain the formation of the hierarchical structures.The synthetic route can be applied to obtain other low-dimensional semiconducting telluride nanostructures.PACS: 65.80.-g, 68.35.bg, 68.35.bt.

View Article: PubMed Central - HTML - PubMed

Affiliation: Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, Nanjing 210016, People's Republic of China. taiguoan@nuaa.edu.cn.

ABSTRACT
A simple solvothermal approach has been developed to successfully synthesize n-type α-In2Te3 thermoelectric nanomaterials. The nanostring-cluster hierarchical structures were prepared using In(NO3)3 and Na2TeO3 as the reactants in a mixed solvent of ethylenediamine and ethylene glycol at 200°C for 24 h. A diffusion-limited reaction mechanism was proposed to explain the formation of the hierarchical structures. The Seebeck coefficient of the bulk pellet pressed by the obtained samples exhibits 43% enhancement over that of the corresponding thin film at room temperature. The electrical conductivity of the bulk pellet is one to four orders of magnitude higher than that of the corresponding thin film or p-type bulk sample. The synthetic route can be applied to obtain other low-dimensional semiconducting telluride nanostructures.PACS: 65.80.-g, 68.35.bg, 68.35.bt.

No MeSH data available.