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A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates.

Zhong Z, Gong H, Ma Y, Fan Y, Jiang Z - Nanoscale Res Lett (2011)

Bottom Line: These results proposed that the formation of the nanowire was energetically driven under growth kinetic assistance.Three-dimensionally self-assembled GeSi nanowires were first realized via multilayer Ge growth separated with Si spacers.These GeSi nanowires were readily embedded in Si matrix and compatible with the sophisticated Si technology, which suggested a feasible strategy to fabricate nanowires for fundamental studies and a wide variety of applications.PACS: 81.07.Gf, 81.16.Dn, 68.65.-k, 68.37.Ps.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Handan Str, 220, Shanghai 200433, China. zhenyangz@fudan.edu.cn.

ABSTRACT
: Very small and compactly arranged GeSi nanowires could self-assembled on vicinal Si (001) substrates with ~8° off toward ⟨110⟩ during Ge deposition. The nanowires were all oriented along the miscut direction. The small ration of height over width of the nanowire indicated that the nanowires were bordered partly with {1 0 5} facets. These self-assembled small nanowires were remarkably influenced by the growth conditions and the miscut angle of substrates in comparison with large dome-like islands obtained after sufficient Ge deposition. These results proposed that the formation of the nanowire was energetically driven under growth kinetic assistance. Three-dimensionally self-assembled GeSi nanowires were first realized via multilayer Ge growth separated with Si spacers. These GeSi nanowires were readily embedded in Si matrix and compatible with the sophisticated Si technology, which suggested a feasible strategy to fabricate nanowires for fundamental studies and a wide variety of applications.PACS: 81.07.Gf, 81.16.Dn, 68.65.-k, 68.37.Ps.

No MeSH data available.


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AFM image (1 × 1 μm2) of the surface morphology after 10th layer of Ge growth on a vicinal Si (001) substrate with ~8° off toward ⟨110⟩. The black arrow denotes the miscut direction.
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Figure 4: AFM image (1 × 1 μm2) of the surface morphology after 10th layer of Ge growth on a vicinal Si (001) substrate with ~8° off toward ⟨110⟩. The black arrow denotes the miscut direction.

Mentions: Multilayer GeSi nanowires separated with thin Si spacers were realized on vicinal Si (001) substrates with 8° off toward ⟨110⟩. Figure 4 showed the surface morphology after 10th layer of Ge growth. The GeSi nanowires were clearly demonstrated. The orientation of the nanowire, denoted as a black arrow in Figure 4, was also along the miscut direction. The size of the nanowires was not so much different from that on the single layer sample. Considering the small height (< 1 nm) of the nanowires and the relatively thicker Si spacer (10 nm), it is reasonable to believe that the surface after each Si spacer growth was still flat (1 1 10), and the strain distribution on the spacer surface due to the buried nanowires could be neglected. Taking the low growth temperature into account, the segregation of Ge can be suppressed. In other words, GeSi nanowires were independently self-assembled in each layer during Ge deposition. As a result, the GeSi nanowires in each layer of the multilayer sample could be not so much different. Analogue to the multilayer GeSi islands growth [27], vertically aligned GeSi nanowires were expected by modulating the amount of Ge deposition and the thickness of Si spacer layer.


A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates.

Zhong Z, Gong H, Ma Y, Fan Y, Jiang Z - Nanoscale Res Lett (2011)

AFM image (1 × 1 μm2) of the surface morphology after 10th layer of Ge growth on a vicinal Si (001) substrate with ~8° off toward ⟨110⟩. The black arrow denotes the miscut direction.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211410&req=5

Figure 4: AFM image (1 × 1 μm2) of the surface morphology after 10th layer of Ge growth on a vicinal Si (001) substrate with ~8° off toward ⟨110⟩. The black arrow denotes the miscut direction.
Mentions: Multilayer GeSi nanowires separated with thin Si spacers were realized on vicinal Si (001) substrates with 8° off toward ⟨110⟩. Figure 4 showed the surface morphology after 10th layer of Ge growth. The GeSi nanowires were clearly demonstrated. The orientation of the nanowire, denoted as a black arrow in Figure 4, was also along the miscut direction. The size of the nanowires was not so much different from that on the single layer sample. Considering the small height (< 1 nm) of the nanowires and the relatively thicker Si spacer (10 nm), it is reasonable to believe that the surface after each Si spacer growth was still flat (1 1 10), and the strain distribution on the spacer surface due to the buried nanowires could be neglected. Taking the low growth temperature into account, the segregation of Ge can be suppressed. In other words, GeSi nanowires were independently self-assembled in each layer during Ge deposition. As a result, the GeSi nanowires in each layer of the multilayer sample could be not so much different. Analogue to the multilayer GeSi islands growth [27], vertically aligned GeSi nanowires were expected by modulating the amount of Ge deposition and the thickness of Si spacer layer.

Bottom Line: These results proposed that the formation of the nanowire was energetically driven under growth kinetic assistance.Three-dimensionally self-assembled GeSi nanowires were first realized via multilayer Ge growth separated with Si spacers.These GeSi nanowires were readily embedded in Si matrix and compatible with the sophisticated Si technology, which suggested a feasible strategy to fabricate nanowires for fundamental studies and a wide variety of applications.PACS: 81.07.Gf, 81.16.Dn, 68.65.-k, 68.37.Ps.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Handan Str, 220, Shanghai 200433, China. zhenyangz@fudan.edu.cn.

ABSTRACT
: Very small and compactly arranged GeSi nanowires could self-assembled on vicinal Si (001) substrates with ~8° off toward ⟨110⟩ during Ge deposition. The nanowires were all oriented along the miscut direction. The small ration of height over width of the nanowire indicated that the nanowires were bordered partly with {1 0 5} facets. These self-assembled small nanowires were remarkably influenced by the growth conditions and the miscut angle of substrates in comparison with large dome-like islands obtained after sufficient Ge deposition. These results proposed that the formation of the nanowire was energetically driven under growth kinetic assistance. Three-dimensionally self-assembled GeSi nanowires were first realized via multilayer Ge growth separated with Si spacers. These GeSi nanowires were readily embedded in Si matrix and compatible with the sophisticated Si technology, which suggested a feasible strategy to fabricate nanowires for fundamental studies and a wide variety of applications.PACS: 81.07.Gf, 81.16.Dn, 68.65.-k, 68.37.Ps.

No MeSH data available.


Related in: MedlinePlus