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A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates.

Zhong Z, Gong H, Ma Y, Fan Y, Jiang Z - Nanoscale Res Lett (2011)

Bottom Line: These results proposed that the formation of the nanowire was energetically driven under growth kinetic assistance.Three-dimensionally self-assembled GeSi nanowires were first realized via multilayer Ge growth separated with Si spacers.These GeSi nanowires were readily embedded in Si matrix and compatible with the sophisticated Si technology, which suggested a feasible strategy to fabricate nanowires for fundamental studies and a wide variety of applications.PACS: 81.07.Gf, 81.16.Dn, 68.65.-k, 68.37.Ps.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Handan Str, 220, Shanghai 200433, China. zhenyangz@fudan.edu.cn.

ABSTRACT
: Very small and compactly arranged GeSi nanowires could self-assembled on vicinal Si (001) substrates with ~8° off toward ⟨110⟩ during Ge deposition. The nanowires were all oriented along the miscut direction. The small ration of height over width of the nanowire indicated that the nanowires were bordered partly with {1 0 5} facets. These self-assembled small nanowires were remarkably influenced by the growth conditions and the miscut angle of substrates in comparison with large dome-like islands obtained after sufficient Ge deposition. These results proposed that the formation of the nanowire was energetically driven under growth kinetic assistance. Three-dimensionally self-assembled GeSi nanowires were first realized via multilayer Ge growth separated with Si spacers. These GeSi nanowires were readily embedded in Si matrix and compatible with the sophisticated Si technology, which suggested a feasible strategy to fabricate nanowires for fundamental studies and a wide variety of applications.PACS: 81.07.Gf, 81.16.Dn, 68.65.-k, 68.37.Ps.

No MeSH data available.


Related in: MedlinePlus

AFM image (1 × 1 μm2) of the surface morphology after 1.1 nm Ge deposition at 560°C on vicinal Si (001) substrates with. (a) 2°, (b) 4°, (c) 8°, (d) 10° off toward ⟨110⟩. The black arrows denote the miscut direction.
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Figure 3: AFM image (1 × 1 μm2) of the surface morphology after 1.1 nm Ge deposition at 560°C on vicinal Si (001) substrates with. (a) 2°, (b) 4°, (c) 8°, (d) 10° off toward ⟨110⟩. The black arrows denote the miscut direction.

Mentions: We also found that self-assembled GeSi nanowires on vicinal Si (001) substrates were sensitively associated with the miscut angle. Figure 3 showed the surface morphologies after ~1.1 nm Ge deposition at 560°C on vicinal Si (001) substrates with 2°, 4°, 8° and 10° off toward ⟨110⟩. On normal Si (001) substrates, both pyramid-like and dome-like GeSi islands can be realized with sufficient Ge deposition. In our cases, due to sufficient Ge deposition, dome-like GeSi islands were also obtained in all samples, which were nearly not affected by the miscut angle. However, the general pyramid-like islands with square base were essentially transferred into nanowires on the vicinal Si (001) substrates with 8° off, which were along the miscut direction denoted by a black arrow in Figure 3c. On the other vicinal Si (001) substrates, the general pyramid-like islands with square base were transformed into asymmetrical pyramid-like islands, which was elongated along the miscut direction denoted by black arrows in Figure 3b-d. In addition, the larger miscut angle of the substrate, the more pronounced elongation of the islands along the miscut direction. These results indicated that the step structures on miscut substrates can considerably affect the small nanostructures rather than the big ones such as big dome-like islands. An important reason is that the step at interface between the small nanostructures and the substrate played an important role in the strain relaxation; whereas it can be neglected for large dome-like islands.


A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates.

Zhong Z, Gong H, Ma Y, Fan Y, Jiang Z - Nanoscale Res Lett (2011)

AFM image (1 × 1 μm2) of the surface morphology after 1.1 nm Ge deposition at 560°C on vicinal Si (001) substrates with. (a) 2°, (b) 4°, (c) 8°, (d) 10° off toward ⟨110⟩. The black arrows denote the miscut direction.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211410&req=5

Figure 3: AFM image (1 × 1 μm2) of the surface morphology after 1.1 nm Ge deposition at 560°C on vicinal Si (001) substrates with. (a) 2°, (b) 4°, (c) 8°, (d) 10° off toward ⟨110⟩. The black arrows denote the miscut direction.
Mentions: We also found that self-assembled GeSi nanowires on vicinal Si (001) substrates were sensitively associated with the miscut angle. Figure 3 showed the surface morphologies after ~1.1 nm Ge deposition at 560°C on vicinal Si (001) substrates with 2°, 4°, 8° and 10° off toward ⟨110⟩. On normal Si (001) substrates, both pyramid-like and dome-like GeSi islands can be realized with sufficient Ge deposition. In our cases, due to sufficient Ge deposition, dome-like GeSi islands were also obtained in all samples, which were nearly not affected by the miscut angle. However, the general pyramid-like islands with square base were essentially transferred into nanowires on the vicinal Si (001) substrates with 8° off, which were along the miscut direction denoted by a black arrow in Figure 3c. On the other vicinal Si (001) substrates, the general pyramid-like islands with square base were transformed into asymmetrical pyramid-like islands, which was elongated along the miscut direction denoted by black arrows in Figure 3b-d. In addition, the larger miscut angle of the substrate, the more pronounced elongation of the islands along the miscut direction. These results indicated that the step structures on miscut substrates can considerably affect the small nanostructures rather than the big ones such as big dome-like islands. An important reason is that the step at interface between the small nanostructures and the substrate played an important role in the strain relaxation; whereas it can be neglected for large dome-like islands.

Bottom Line: These results proposed that the formation of the nanowire was energetically driven under growth kinetic assistance.Three-dimensionally self-assembled GeSi nanowires were first realized via multilayer Ge growth separated with Si spacers.These GeSi nanowires were readily embedded in Si matrix and compatible with the sophisticated Si technology, which suggested a feasible strategy to fabricate nanowires for fundamental studies and a wide variety of applications.PACS: 81.07.Gf, 81.16.Dn, 68.65.-k, 68.37.Ps.

View Article: PubMed Central - HTML - PubMed

Affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Handan Str, 220, Shanghai 200433, China. zhenyangz@fudan.edu.cn.

ABSTRACT
: Very small and compactly arranged GeSi nanowires could self-assembled on vicinal Si (001) substrates with ~8° off toward ⟨110⟩ during Ge deposition. The nanowires were all oriented along the miscut direction. The small ration of height over width of the nanowire indicated that the nanowires were bordered partly with {1 0 5} facets. These self-assembled small nanowires were remarkably influenced by the growth conditions and the miscut angle of substrates in comparison with large dome-like islands obtained after sufficient Ge deposition. These results proposed that the formation of the nanowire was energetically driven under growth kinetic assistance. Three-dimensionally self-assembled GeSi nanowires were first realized via multilayer Ge growth separated with Si spacers. These GeSi nanowires were readily embedded in Si matrix and compatible with the sophisticated Si technology, which suggested a feasible strategy to fabricate nanowires for fundamental studies and a wide variety of applications.PACS: 81.07.Gf, 81.16.Dn, 68.65.-k, 68.37.Ps.

No MeSH data available.


Related in: MedlinePlus