Limits...
Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy.

Jia C, Chen Y, Guo Y, Liu X, Yang S, Zhang W, Wang Z - Nanoscale Res Lett (2011)

Bottom Line: It is found that a type-I band alignment forms at the interface.The valence band offset (VBO) and conduction band offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, respectively.The experimental VBO data is well consistent with the value that comes from transitivity rule.

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, P,O, Box 912, Beijing 100083, PR China. yhchen@semi.ac.cn.

ABSTRACT
X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO3 heterojunction. It is found that a type-I band alignment forms at the interface. The valence band offset (VBO) and conduction band offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, respectively. The experimental VBO data is well consistent with the value that comes from transitivity rule. The accurate determination of VBO and CBO is important for use of semiconductor/ferrroelectric heterojunction multifunctional devices.

No MeSH data available.


Energy band diagram of InN/BTO heterojunction.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC3211403&req=5

Figure 3: Energy band diagram of InN/BTO heterojunction.

Mentions: Finally, the CBO (ΔEC) can be estimated by the formula . By substituting the band gap values at room temperature ( = 0.7 eV [23] and = 3.1 eV [17]), ΔEC is calculated to be 0.15 ± 0.09 eV. Accordingly, a type-I band alignment forms at the heterojunction interface, as shown in Figure 3.


Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy.

Jia C, Chen Y, Guo Y, Liu X, Yang S, Zhang W, Wang Z - Nanoscale Res Lett (2011)

Energy band diagram of InN/BTO heterojunction.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211403&req=5

Figure 3: Energy band diagram of InN/BTO heterojunction.
Mentions: Finally, the CBO (ΔEC) can be estimated by the formula . By substituting the band gap values at room temperature ( = 0.7 eV [23] and = 3.1 eV [17]), ΔEC is calculated to be 0.15 ± 0.09 eV. Accordingly, a type-I band alignment forms at the heterojunction interface, as shown in Figure 3.

Bottom Line: It is found that a type-I band alignment forms at the interface.The valence band offset (VBO) and conduction band offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, respectively.The experimental VBO data is well consistent with the value that comes from transitivity rule.

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, P,O, Box 912, Beijing 100083, PR China. yhchen@semi.ac.cn.

ABSTRACT
X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO3 heterojunction. It is found that a type-I band alignment forms at the interface. The valence band offset (VBO) and conduction band offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, respectively. The experimental VBO data is well consistent with the value that comes from transitivity rule. The accurate determination of VBO and CBO is important for use of semiconductor/ferrroelectric heterojunction multifunctional devices.

No MeSH data available.