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Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy.

Jia C, Chen Y, Guo Y, Liu X, Yang S, Zhang W, Wang Z - Nanoscale Res Lett (2011)

Bottom Line: It is found that a type-I band alignment forms at the interface.The valence band offset (VBO) and conduction band offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, respectively.The experimental VBO data is well consistent with the value that comes from transitivity rule.

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, P,O, Box 912, Beijing 100083, PR China. yhchen@semi.ac.cn.

ABSTRACT
X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO3 heterojunction. It is found that a type-I band alignment forms at the interface. The valence band offset (VBO) and conduction band offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, respectively. The experimental VBO data is well consistent with the value that comes from transitivity rule. The accurate determination of VBO and CBO is important for use of semiconductor/ferrroelectric heterojunction multifunctional devices.

No MeSH data available.


In3d spectra recorded on InN (a) and InN/BTO (e), Ti2p spectra on BTO (c) and InN/BTO (f), and VB spectra for InN (b) and BTO (d). All peaks have been fitted to Voigt line shapes using Shirley background, and the VBM values are determined by linear extrapolation of the leading edge to the base line. The errors in the peak positions and VBM are ±0.03 and ±0.06 eV, respectively.
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Figure 2: In3d spectra recorded on InN (a) and InN/BTO (e), Ti2p spectra on BTO (c) and InN/BTO (f), and VB spectra for InN (b) and BTO (d). All peaks have been fitted to Voigt line shapes using Shirley background, and the VBM values are determined by linear extrapolation of the leading edge to the base line. The errors in the peak positions and VBM are ±0.03 and ±0.06 eV, respectively.

Mentions: Figure 2 shows the XPS Ti2p and In3d CL narrow scans and the valence band spectra from the bulk BTO, thick InN, and thin InN/BTO samples, respectively. All the CL spectra were fitted to Voigt (mixed Lorentz-Gaussian) line shape with a Shirley background. The uncertainty of the CL position is less than 0.03 eV, evaluated by numerous fittings with different parameters. The VBM positions were determined by linear extrapolation of the leading edge of the VB spectra recorded on the bulk BTO and thick InN film to the base lines to account for the instrument resolution-induced tail [10]. Evidently, the VBM value is sensitive to the choice of points on the leading edge used to obtain the regression line [11]. Several different sets of points were selected over the linear region of the leading edge to perform regressions, and the uncertainty of VBO is found to be less than 0.06 eV in the present work.


Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy.

Jia C, Chen Y, Guo Y, Liu X, Yang S, Zhang W, Wang Z - Nanoscale Res Lett (2011)

In3d spectra recorded on InN (a) and InN/BTO (e), Ti2p spectra on BTO (c) and InN/BTO (f), and VB spectra for InN (b) and BTO (d). All peaks have been fitted to Voigt line shapes using Shirley background, and the VBM values are determined by linear extrapolation of the leading edge to the base line. The errors in the peak positions and VBM are ±0.03 and ±0.06 eV, respectively.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211403&req=5

Figure 2: In3d spectra recorded on InN (a) and InN/BTO (e), Ti2p spectra on BTO (c) and InN/BTO (f), and VB spectra for InN (b) and BTO (d). All peaks have been fitted to Voigt line shapes using Shirley background, and the VBM values are determined by linear extrapolation of the leading edge to the base line. The errors in the peak positions and VBM are ±0.03 and ±0.06 eV, respectively.
Mentions: Figure 2 shows the XPS Ti2p and In3d CL narrow scans and the valence band spectra from the bulk BTO, thick InN, and thin InN/BTO samples, respectively. All the CL spectra were fitted to Voigt (mixed Lorentz-Gaussian) line shape with a Shirley background. The uncertainty of the CL position is less than 0.03 eV, evaluated by numerous fittings with different parameters. The VBM positions were determined by linear extrapolation of the leading edge of the VB spectra recorded on the bulk BTO and thick InN film to the base lines to account for the instrument resolution-induced tail [10]. Evidently, the VBM value is sensitive to the choice of points on the leading edge used to obtain the regression line [11]. Several different sets of points were selected over the linear region of the leading edge to perform regressions, and the uncertainty of VBO is found to be less than 0.06 eV in the present work.

Bottom Line: It is found that a type-I band alignment forms at the interface.The valence band offset (VBO) and conduction band offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, respectively.The experimental VBO data is well consistent with the value that comes from transitivity rule.

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, P,O, Box 912, Beijing 100083, PR China. yhchen@semi.ac.cn.

ABSTRACT
X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO3 heterojunction. It is found that a type-I band alignment forms at the interface. The valence band offset (VBO) and conduction band offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, respectively. The experimental VBO data is well consistent with the value that comes from transitivity rule. The accurate determination of VBO and CBO is important for use of semiconductor/ferrroelectric heterojunction multifunctional devices.

No MeSH data available.