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Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy.

Jia C, Chen Y, Guo Y, Liu X, Yang S, Zhang W, Wang Z - Nanoscale Res Lett (2011)

Bottom Line: It is found that a type-I band alignment forms at the interface.The valence band offset (VBO) and conduction band offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, respectively.The experimental VBO data is well consistent with the value that comes from transitivity rule.

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, P,O, Box 912, Beijing 100083, PR China. yhchen@semi.ac.cn.

ABSTRACT
X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO3 heterojunction. It is found that a type-I band alignment forms at the interface. The valence band offset (VBO) and conduction band offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, respectively. The experimental VBO data is well consistent with the value that comes from transitivity rule. The accurate determination of VBO and CBO is important for use of semiconductor/ferrroelectric heterojunction multifunctional devices.

No MeSH data available.


X-ray θ-2θ diffraction pattern of the thick InN films on BTO substrates.
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Figure 1: X-ray θ-2θ diffraction pattern of the thick InN films on BTO substrates.

Mentions: In X-ray θ-2θ diffraction measurements, as shown in Figure 1, the thick InN/BTO sample presented the only peak of InN (0002) reflection and no other InN-related peaks were observed, implying a complete c-axis-oriented growth of the InN layer. The VBO (ΔEV) can be calculated from the formula(1)


Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy.

Jia C, Chen Y, Guo Y, Liu X, Yang S, Zhang W, Wang Z - Nanoscale Res Lett (2011)

X-ray θ-2θ diffraction pattern of the thick InN films on BTO substrates.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211403&req=5

Figure 1: X-ray θ-2θ diffraction pattern of the thick InN films on BTO substrates.
Mentions: In X-ray θ-2θ diffraction measurements, as shown in Figure 1, the thick InN/BTO sample presented the only peak of InN (0002) reflection and no other InN-related peaks were observed, implying a complete c-axis-oriented growth of the InN layer. The VBO (ΔEV) can be calculated from the formula(1)

Bottom Line: It is found that a type-I band alignment forms at the interface.The valence band offset (VBO) and conduction band offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, respectively.The experimental VBO data is well consistent with the value that comes from transitivity rule.

View Article: PubMed Central - HTML - PubMed

Affiliation: Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, P,O, Box 912, Beijing 100083, PR China. yhchen@semi.ac.cn.

ABSTRACT
X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO3 heterojunction. It is found that a type-I band alignment forms at the interface. The valence band offset (VBO) and conduction band offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, respectively. The experimental VBO data is well consistent with the value that comes from transitivity rule. The accurate determination of VBO and CBO is important for use of semiconductor/ferrroelectric heterojunction multifunctional devices.

No MeSH data available.