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Cohesive strength of nanocrystalline ZnO:Ga thin films deposited at room temperature.

Samantilleke AP, Rebouta LM, Garim V, Rubio-Peña L, Lanceros-Mendez S, Alpuim P, Carvalho S, Kudrin AV, Danilov YA - Nanoscale Res Lett (2011)

Bottom Line: The COS is similar for different GZO coatings and occurs for nominal strains approx. 1%.The cohesive strength of coatings, which was evaluated from the initial part of the crack density evolution, was found to be between 1.3 and 1.4 GPa.For these calculations, a Young's modulus of 112 GPa was used, evaluated by nanoindentation.

View Article: PubMed Central - HTML - PubMed

Affiliation: Centro de Física, Universidade do Minho, Azurém, 4800-058 Guimarães, Portugal. anura@fisica.uminho.pt.

ABSTRACT
In this study, transparent conducting nanocrystalline ZnO:Ga (GZO) films were deposited by dc magnetron sputtering at room temperature on polymers (and glass for comparison). Electrical resistivities of 8.8 × 10-4 and 2.2 × 10-3 Ω cm were obtained for films deposited on glass and polymers, respectively. The crack onset strain (COS) and the cohesive strength of the coatings were investigated by means of tensile testing. The COS is similar for different GZO coatings and occurs for nominal strains approx. 1%. The cohesive strength of coatings, which was evaluated from the initial part of the crack density evolution, was found to be between 1.3 and 1.4 GPa. For these calculations, a Young's modulus of 112 GPa was used, evaluated by nanoindentation.

No MeSH data available.


Related in: MedlinePlus

Optical transmittance of GZO/glass at various Pws.
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Figure 2: Optical transmittance of GZO/glass at various Pws.

Mentions: The nc nature of the thin films influences both optical and electrical performance. Figure 2 shows optical transmittance as a function of wavelength for thick GZO films (approx. 700 nm) prepared on glass at various Pw, using air as a reference. The near infra-red transmittance is lower for Pw values of 0.41 and 0.53 Pa and increases with higher Pw, which is consistent with the changes observed in the electrical resistivity (discussed in the next section). The optical band gap for GZO films was calculated by plotting (αhν)2 as a function of photon energy (hν) and extrapolating the linear region of (αhν)2 to energy axis where (αhν)2 corresponds to zero. Figure 2b shows the plot of (αhν)2 as a function of photon energy (hν) for GZO films. From these plots, it can be seen that the value of the bandgap of GZO decreased from 3.73 eV (0.41 Pa) to 3.48 eV (0.86 Pa), which can be understood in the context of the Burstein Moss shift [9].


Cohesive strength of nanocrystalline ZnO:Ga thin films deposited at room temperature.

Samantilleke AP, Rebouta LM, Garim V, Rubio-Peña L, Lanceros-Mendez S, Alpuim P, Carvalho S, Kudrin AV, Danilov YA - Nanoscale Res Lett (2011)

Optical transmittance of GZO/glass at various Pws.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211395&req=5

Figure 2: Optical transmittance of GZO/glass at various Pws.
Mentions: The nc nature of the thin films influences both optical and electrical performance. Figure 2 shows optical transmittance as a function of wavelength for thick GZO films (approx. 700 nm) prepared on glass at various Pw, using air as a reference. The near infra-red transmittance is lower for Pw values of 0.41 and 0.53 Pa and increases with higher Pw, which is consistent with the changes observed in the electrical resistivity (discussed in the next section). The optical band gap for GZO films was calculated by plotting (αhν)2 as a function of photon energy (hν) and extrapolating the linear region of (αhν)2 to energy axis where (αhν)2 corresponds to zero. Figure 2b shows the plot of (αhν)2 as a function of photon energy (hν) for GZO films. From these plots, it can be seen that the value of the bandgap of GZO decreased from 3.73 eV (0.41 Pa) to 3.48 eV (0.86 Pa), which can be understood in the context of the Burstein Moss shift [9].

Bottom Line: The COS is similar for different GZO coatings and occurs for nominal strains approx. 1%.The cohesive strength of coatings, which was evaluated from the initial part of the crack density evolution, was found to be between 1.3 and 1.4 GPa.For these calculations, a Young's modulus of 112 GPa was used, evaluated by nanoindentation.

View Article: PubMed Central - HTML - PubMed

Affiliation: Centro de Física, Universidade do Minho, Azurém, 4800-058 Guimarães, Portugal. anura@fisica.uminho.pt.

ABSTRACT
In this study, transparent conducting nanocrystalline ZnO:Ga (GZO) films were deposited by dc magnetron sputtering at room temperature on polymers (and glass for comparison). Electrical resistivities of 8.8 × 10-4 and 2.2 × 10-3 Ω cm were obtained for films deposited on glass and polymers, respectively. The crack onset strain (COS) and the cohesive strength of the coatings were investigated by means of tensile testing. The COS is similar for different GZO coatings and occurs for nominal strains approx. 1%. The cohesive strength of coatings, which was evaluated from the initial part of the crack density evolution, was found to be between 1.3 and 1.4 GPa. For these calculations, a Young's modulus of 112 GPa was used, evaluated by nanoindentation.

No MeSH data available.


Related in: MedlinePlus