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Thermal conductivity and thermal boundary resistance of nanostructures.

Termentzidis K, Parasuraman J, Da Cruz CA, Merabia S, Angelescu D, Marty F, Bourouina T, Kleber X, Chantrenne P, Basset P - Nanoscale Res Lett (2011)

Bottom Line: The influence of the interfacial roughness on the thermal conductivity of semiconductor/semiconductor superlattices was studied by equilibrium and non-equilibrium molecular dynamics and on the Kapitza resistance of superlattice's interfaces by equilibrium molecular dynamics.Physical explanations are provided for rationalizing the simulation results.PACS: 68.65.Cd, 66.70.Df, 81.16.-c, 65.80.-g, 31.12.xv.

View Article: PubMed Central - HTML - PubMed

Affiliation: INSA Lyon, CETHIL UMR5008, F-69621 Villeurbanne, France. konstantinos.termentzidis@gmail.com.

ABSTRACT
: We present a fabrication process of low-cost superlattices and simulations related with the heat dissipation on them. The influence of the interfacial roughness on the thermal conductivity of semiconductor/semiconductor superlattices was studied by equilibrium and non-equilibrium molecular dynamics and on the Kapitza resistance of superlattice's interfaces by equilibrium molecular dynamics. The non-equilibrium method was the tool used for the prediction of the Kapitza resistance for a binary semiconductor/metal system. Physical explanations are provided for rationalizing the simulation results. PACS: 68.65.Cd, 66.70.Df, 81.16.-c, 65.80.-g, 31.12.xv.

No MeSH data available.


Related in: MedlinePlus

SEM pictures obtained by the group ESYCOM and ESIEE at Marne-la-Vallee, France, showing two submicron trenches in a silicon wafer.
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Figure 1: SEM pictures obtained by the group ESYCOM and ESIEE at Marne-la-Vallee, France, showing two submicron trenches in a silicon wafer.

Mentions: In this article, the prediction tools used for studying heat transfer in low-cost superlattices for thermoelectric conversion are presented. The technology used in the fabrication of these superlattices is based on the method developed by Marty et al. [1,2] to manufacture deep silicon trenches with submicron feature sizes (Figure 1). The height and periodicity of the wavelike shape of the surfaces can be monitored. When the trenches are filled in with another material, they give rise to superlattices with rough interfaces. This was the motivation for studying both the thermal conductivity and the Kapitza resistance [3] of superlattices with rough interfaces. We focus mostly at the influence of interfacial width of the superlattices made of two semiconductor-like materials, with simple Lennard-Jones potential for the description of interatomic forces. Simulations of the Kapitza resistance for binary system of silicon with metal are also presented. These interfaces are difficult to be modelled, first of all because of the phonon-electron coupling that occurs at these interfaces and secondly because of the plethora of potentials which can be used. The choice of potential is based in a comparison of their performance to predict in a correct manner, the harmonic and anharmonic properties of the material. Results on the Kapitza resistance of a silver/silicon interfaces are also presented.


Thermal conductivity and thermal boundary resistance of nanostructures.

Termentzidis K, Parasuraman J, Da Cruz CA, Merabia S, Angelescu D, Marty F, Bourouina T, Kleber X, Chantrenne P, Basset P - Nanoscale Res Lett (2011)

SEM pictures obtained by the group ESYCOM and ESIEE at Marne-la-Vallee, France, showing two submicron trenches in a silicon wafer.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC3211353&req=5

Figure 1: SEM pictures obtained by the group ESYCOM and ESIEE at Marne-la-Vallee, France, showing two submicron trenches in a silicon wafer.
Mentions: In this article, the prediction tools used for studying heat transfer in low-cost superlattices for thermoelectric conversion are presented. The technology used in the fabrication of these superlattices is based on the method developed by Marty et al. [1,2] to manufacture deep silicon trenches with submicron feature sizes (Figure 1). The height and periodicity of the wavelike shape of the surfaces can be monitored. When the trenches are filled in with another material, they give rise to superlattices with rough interfaces. This was the motivation for studying both the thermal conductivity and the Kapitza resistance [3] of superlattices with rough interfaces. We focus mostly at the influence of interfacial width of the superlattices made of two semiconductor-like materials, with simple Lennard-Jones potential for the description of interatomic forces. Simulations of the Kapitza resistance for binary system of silicon with metal are also presented. These interfaces are difficult to be modelled, first of all because of the phonon-electron coupling that occurs at these interfaces and secondly because of the plethora of potentials which can be used. The choice of potential is based in a comparison of their performance to predict in a correct manner, the harmonic and anharmonic properties of the material. Results on the Kapitza resistance of a silver/silicon interfaces are also presented.

Bottom Line: The influence of the interfacial roughness on the thermal conductivity of semiconductor/semiconductor superlattices was studied by equilibrium and non-equilibrium molecular dynamics and on the Kapitza resistance of superlattice's interfaces by equilibrium molecular dynamics.Physical explanations are provided for rationalizing the simulation results.PACS: 68.65.Cd, 66.70.Df, 81.16.-c, 65.80.-g, 31.12.xv.

View Article: PubMed Central - HTML - PubMed

Affiliation: INSA Lyon, CETHIL UMR5008, F-69621 Villeurbanne, France. konstantinos.termentzidis@gmail.com.

ABSTRACT
: We present a fabrication process of low-cost superlattices and simulations related with the heat dissipation on them. The influence of the interfacial roughness on the thermal conductivity of semiconductor/semiconductor superlattices was studied by equilibrium and non-equilibrium molecular dynamics and on the Kapitza resistance of superlattice's interfaces by equilibrium molecular dynamics. The non-equilibrium method was the tool used for the prediction of the Kapitza resistance for a binary semiconductor/metal system. Physical explanations are provided for rationalizing the simulation results. PACS: 68.65.Cd, 66.70.Df, 81.16.-c, 65.80.-g, 31.12.xv.

No MeSH data available.


Related in: MedlinePlus